JPS61256632A - 微細パタ−ン形成方法 - Google Patents
微細パタ−ン形成方法Info
- Publication number
- JPS61256632A JPS61256632A JP60097406A JP9740685A JPS61256632A JP S61256632 A JPS61256632 A JP S61256632A JP 60097406 A JP60097406 A JP 60097406A JP 9740685 A JP9740685 A JP 9740685A JP S61256632 A JPS61256632 A JP S61256632A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- ion beam
- fine pattern
- substrate
- base substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Drying Of Semiconductors (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60097406A JPS61256632A (ja) | 1985-05-08 | 1985-05-08 | 微細パタ−ン形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60097406A JPS61256632A (ja) | 1985-05-08 | 1985-05-08 | 微細パタ−ン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61256632A true JPS61256632A (ja) | 1986-11-14 |
| JPH0325008B2 JPH0325008B2 (cg-RX-API-DMAC7.html) | 1991-04-04 |
Family
ID=14191617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60097406A Granted JPS61256632A (ja) | 1985-05-08 | 1985-05-08 | 微細パタ−ン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61256632A (cg-RX-API-DMAC7.html) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003054945A1 (fr) * | 2001-12-11 | 2003-07-03 | The New Industry Research Organization | Procede de formation de motifs fins au moyen d'un faisceau ionique sur un resist multicouche inorganique, dispositif a semi-conducteur, dispositif quantique, composant de micromachine et structure fine produite au moyen de ce procede |
| JP2008310299A (ja) * | 2007-05-15 | 2008-12-25 | Canon Inc | ３次元フォトニック結晶の製造方法 |
| JP2008311617A (ja) * | 2007-05-15 | 2008-12-25 | Canon Inc | ナノ構造体およびナノ構造体の製造方法 |
-
1985
- 1985-05-08 JP JP60097406A patent/JPS61256632A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003054945A1 (fr) * | 2001-12-11 | 2003-07-03 | The New Industry Research Organization | Procede de formation de motifs fins au moyen d'un faisceau ionique sur un resist multicouche inorganique, dispositif a semi-conducteur, dispositif quantique, composant de micromachine et structure fine produite au moyen de ce procede |
| JP2008310299A (ja) * | 2007-05-15 | 2008-12-25 | Canon Inc | ３次元フォトニック結晶の製造方法 |
| JP2008311617A (ja) * | 2007-05-15 | 2008-12-25 | Canon Inc | ナノ構造体およびナノ構造体の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0325008B2 (cg-RX-API-DMAC7.html) | 1991-04-04 |
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