JPH0358131B2 - - Google Patents
Info
- Publication number
- JPH0358131B2 JPH0358131B2 JP475484A JP475484A JPH0358131B2 JP H0358131 B2 JPH0358131 B2 JP H0358131B2 JP 475484 A JP475484 A JP 475484A JP 475484 A JP475484 A JP 475484A JP H0358131 B2 JPH0358131 B2 JP H0358131B2
- Authority
- JP
- Japan
- Prior art keywords
- ion
- alloy
- type
- melting point
- ion beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010884 ion-beam technique Methods 0.000 claims description 17
- 229910001338 liquidmetal Inorganic materials 0.000 claims description 12
- 229910002059 quaternary alloy Inorganic materials 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 description 41
- 230000008018 melting Effects 0.000 description 16
- 238000002844 melting Methods 0.000 description 16
- 238000005468 ion implantation Methods 0.000 description 12
- 239000012535 impurity Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000002955 isolation Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 5
- 239000010953 base metal Substances 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000006023 eutectic alloy Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910015365 Au—Si Inorganic materials 0.000 description 2
- 229910021074 Pd—Si Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910000521 B alloy Inorganic materials 0.000 description 1
- 229910000952 Be alloy Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000008710 crystal-8 Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/26—Ion sources; Ion guns using surface ionisation, e.g. field effect ion sources, thermionic ion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/022—Details
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP475484A JPS60150535A (ja) | 1984-01-17 | 1984-01-17 | 電界放出型イオンビ−ム発生装置用液体金属イオン源 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP475484A JPS60150535A (ja) | 1984-01-17 | 1984-01-17 | 電界放出型イオンビ−ム発生装置用液体金属イオン源 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60150535A JPS60150535A (ja) | 1985-08-08 |
| JPH0358131B2 true JPH0358131B2 (cg-RX-API-DMAC7.html) | 1991-09-04 |
Family
ID=11592690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP475484A Granted JPS60150535A (ja) | 1984-01-17 | 1984-01-17 | 電界放出型イオンビ−ム発生装置用液体金属イオン源 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60150535A (cg-RX-API-DMAC7.html) |
-
1984
- 1984-01-17 JP JP475484A patent/JPS60150535A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60150535A (ja) | 1985-08-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |