JPS6482562A - Manufacture of bipolar semiconductor device - Google Patents

Abstract

PURPOSE:To prevent the generation of a region where ion is not implanted in a base region, and avoid the failure of element characteristics such as short- circuiting between an emitter and a collector, by implanting ion in the base region while a semiconductor substrate is rotated at the time of impurity introduction into a base layer in a forming process of the base region. CONSTITUTION:Boron as impurity is implanted in a base layer 5b. During ion- implanting, a semiconductor substrate 1a is turned around an axis in the normal direction 1b. In this case, the direction 7d wherein an implanting beam 7c aims the semiconductor substrate 1a is inclined at an angle of theta to the normal 1b of a main surface of the semiconductor surface 1a. During ion-implantating, an ion-implanting beam 7a flows into the semiconductor substrate 1a, and then it relatively flows into the substrate along the direction of an ion implanting beam 7b, as the result of rotation of the semiconductor substrate 1a. The shadow part of a resist film 6 concerning the ion-implanting beam 7a is a region 8a in which ion is not implanted. This region 8a is subjected to ion implanting by the ion-implanting beam 7b, so that the generation of the region 8a, in which ion is not implanted, is prevented.