JPS56116872A - Evaporation apparatus - Google Patents

Evaporation apparatus

Info

Publication number
JPS56116872A
JPS56116872A JP1757680A JP1757680A JPS56116872A JP S56116872 A JPS56116872 A JP S56116872A JP 1757680 A JP1757680 A JP 1757680A JP 1757680 A JP1757680 A JP 1757680A JP S56116872 A JPS56116872 A JP S56116872A
Authority
JP
Japan
Prior art keywords
particles
semiconductor wafers
collided
dish
rotated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1757680A
Other languages
Japanese (ja)
Inventor
Kazumasa Shigematsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP1757680A priority Critical patent/JPS56116872A/en
Publication of JPS56116872A publication Critical patent/JPS56116872A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To form a uniform evaporated film, in evaporation of a wiring metal material such as Al or the like to a surface of a semiconductor substrate in a vacuum bell jar, by limiting an injecting angle of evaporating metal particles against the surface of said substrate to a specific value or below. CONSTITUTION:A metal evaporation source 12 such as Al or the like is placed in the vacuum bell jar 10 and Al particles 8a-8f are collided to semiconductor wafers 20a-20f by irradiating electron beam to deposit Al as the wiring metal material. In this case, the semiconductor wafers 20a-20f are attached to a dish 18 rotating to a B direction by a rotary shaft 18a and said dish 18 itself is attached to a cone shaped holder 16 revolving to an A direcdion by a motor 14. Therefore, the semiconductor wafers are rotated to upward and downward directions as well as also rotated to the A direction. The Al particles 8a-8f are collided to said wafers but a shield body 22 is placed to an upper part so as to adjust an angle theta formed by the direction of said Al particles and wafer surfaces to 45 deg. or below to prevent the generation of abnormal evaporated parts.
JP1757680A 1980-02-15 1980-02-15 Evaporation apparatus Pending JPS56116872A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1757680A JPS56116872A (en) 1980-02-15 1980-02-15 Evaporation apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1757680A JPS56116872A (en) 1980-02-15 1980-02-15 Evaporation apparatus

Publications (1)

Publication Number Publication Date
JPS56116872A true JPS56116872A (en) 1981-09-12

Family

ID=11947730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1757680A Pending JPS56116872A (en) 1980-02-15 1980-02-15 Evaporation apparatus

Country Status (1)

Country Link
JP (1) JPS56116872A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6365071A (en) * 1986-09-05 1988-03-23 Nec Corp Sputtering device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6365071A (en) * 1986-09-05 1988-03-23 Nec Corp Sputtering device

Similar Documents

Publication Publication Date Title
US4511593A (en) Vapor deposition apparatus and method
US4632059A (en) Evaporator device for the evaporation of several materials
GB1490481A (en) Particle implantation
JPS56116872A (en) Evaporation apparatus
US3523517A (en) Rotating workpiece holder
JPS55150238A (en) Method of irradiating laser beam
US3373050A (en) Deflecting particles in vacuum coating process
JPS6473075A (en) Film forming device by ion beam sputtering
GB1529418A (en) Coating substrates
FR2288793A1 (en) Vapour deposition in vacuum on substrates sensitive to heat - using electron beam device suitable for glass and plastic substrates
JPS5248468A (en) Process for production of semiconductor device
JPS63291421A (en) Treatment of semiconductor wafer
JPH0360913B2 (en)
JPS6482562A (en) Manufacture of bipolar semiconductor device
JPH0710932U (en) Vapor phase growth equipment
JPS5678422A (en) Preparation of electrically conductive transparent thin film
CA1053130A (en) Method and apparatus for doping semiconductors in centrifuge
JPS6465089A (en) Method and apparatus for producing semiconductor
JPS61121322A (en) Forming device for film
KR100329207B1 (en) A Large Area Deposition Method and A Deposition System Thereby
JPS5763675A (en) Wristwatch case with diamond coating and its production
JPS6277462A (en) Sputtering device
JPH02258971A (en) Evaporating source
JPH03100174A (en) Surface reforming device by ion beam
JPS6481192A (en) Formation of ferroelectric thin film