JPH0710932U - Vapor phase growth equipment - Google Patents

Abstract

(57) [Abstract] [Purpose] The reaction products can be prevented from being partially concentrated and deposited, and the vapor phase growth defects due to the adhesion of the reaction products can be prevented, and at the same time, the quartz bell jar and the coil cover can be prevented. (EN) Provided is a vapor phase growth apparatus capable of extending the cycle of decomposition and cleaning, improving maintainability and productivity. A nozzle rotating means 15 is provided to continuously or intermittently rotate a nozzle 9 for introducing a reaction gas 10 into a reaction chamber 3 to prevent the reaction gas 10 from being concentrated and hitting the same portion. The reaction product is uniformly deposited over the entire circumference of the reaction chamber 3.

Description

[Detailed description of the device]

[0001]

[Industrial applications]

 The present invention relates to a vapor phase growth apparatus for injecting a reaction gas mixed with a carrier gas into a reaction chamber and vapor-depositing a required semiconductor thin film on a wafer by a chemical reaction.

[0002]

[Prior art]

 Conventionally, a vapor phase growth apparatus as shown in FIG. 4 has been put to practical use. A quartz bell jar b is placed on the upper part of the base plate a to form a confidential reaction chamber c, and the reaction chamber c is provided with a susceptor d and a plurality of wafers e ... It is supposed to be placed.

The susceptor d is supported by a susceptor support f, and the susceptor support f is rotatably driven by a susceptor rotation drive section g so that the susceptor d is integrally rotated.

A work heating coil j is arranged below the susceptor d to heat the susceptor d. Further, a nozzle k is provided so as to penetrate the central portion of the susceptor d, and a reaction gas m mixed with a carrier gas is ejected into the reaction chamber c.

The nozzle k is made of quartz glass and is provided with a plurality of reaction gas ejection holes p ... (A plurality of steps), and the reaction gas m is ejected in the horizontal direction (arrow direction). There is.

Further, a coil cover n made of a quartz product having a structure for covering the work heating coil j is provided between the susceptor d and the work heating coil j, and the work heating coil j is connected to the reaction gas m. More isolated.

In order to perform vapor phase growth on the wafer e, the susceptor d is rotated, a high frequency power source is supplied to the work heating coil j by a high frequency oscillator (not shown), and the reaction gas m is jetted from the nozzle k. .

As a result, the susceptor d is heated, and by receiving the heat, the wafers e ... Are heated to the required temperature, and semiconductor crystals are vapor-phase grown on the surfaces of the wafers e.

[0009]

[Problems to be solved by the device]

 However, in the conventional apparatus, the nozzle k is fixedly provided and does not rotate. Therefore, the reaction gas m ejected from the nozzle k always flows in the horizontal direction toward the same portion, and the reaction gas m hits the "A" part of the quartz bell jar b and the "B" part of the coil cover n. The reaction products are partially concentrated and deposited.

Then, the adhered reaction product drops during vapor phase growth or rises up in the reaction chamber c, adheres to the surface of the wafer e ..., and causes vapor phase growth defects (particles). There was a problem that occurred.

Further, if the reaction products are partially deposited on the quartz bell jar b and the coil cover n, the cycle for disassembling and cleaning the quartz bell jar b and the coil cover n becomes short, which is not only troublesome in maintenance but also in productivity. There was a problem that was worse.

The present invention has been made based on the above circumstances, and can prevent the reaction products from being partially concentrated and deposited, and can prevent the vapor phase growth defect due to the adhesion of the reaction products. It is an object of the present invention to provide a vapor phase growth apparatus capable of extending the cycle of disassembling and cleaning quartz bell jars, coil covers, etc. and improving maintainability and productivity.

[0013]

[Means for Solving the Problems]

 As a first means for solving the above problems, the present invention provides a sealed container placed on a base to form a reaction chamber therein, and a susceptor on which a semiconductor wafer provided in the reaction chamber is placed. And a work heating coil for heating the susceptor, and a nozzle for introducing a reaction gas into the reaction chamber, a nozzle rotating means for rotating the nozzle continuously or intermittently. Is provided.

As a second means, a hermetically sealed container placed on a base to form a reaction chamber therein, a susceptor for placing a semiconductor wafer provided in the reaction chamber, and the susceptor are heated. In a vapor phase growth apparatus comprising a work heating coil for heating and a nozzle for introducing a reaction gas into the reaction chamber, there is provided nozzle phase adjusting means capable of changing the phase of the nozzle for each batch of the vapor phase growth process. It is provided.

[0015]

[Action]

 According to the vapor phase growth apparatus of the first means, since the nozzle for introducing the reaction gas into the reaction chamber is rotated continuously or intermittently, the ejection direction of the reaction gas ejected from the nozzle is continuous. Or, since the reaction gas changes intermittently, it is possible to prevent the reaction gas from concentrating and hitting the same portion, and the reaction products can be evenly deposited over the entire circumference of the reaction chamber. As a result, it is possible to prevent the reaction products from being partially concentrated and deposited, and to prevent vapor phase growth defects due to the adhesion of the reaction products, and also to perform a cycle of disassembling and cleaning the quartz bell jar, the coil cover, etc. It can be extended, improving maintainability and productivity.

Further, according to the vapor phase growth apparatus of the second means, the nozzle phase adjusting means is provided which can change the phase of the nozzle for introducing the reaction gas into the reaction chamber for each batch of the vapor phase growth process. Since the direction of the reaction gas ejected from the nozzle changes for each batch of the vapor phase growth process, it is possible to prevent the reaction gas from concentrating and hitting the same portion, and the reaction is generated evenly over the entire circumference of the reaction chamber. Objects can be deposited. As a result, it is possible to prevent the reaction products from partially concentrating and depositing, and to prevent the generation of vapor phase growth defects due to the adhesion of the reaction products, as well as the cycle of disassembly and cleaning of the quartz bell jar and coil cover. Can be extended, improving maintainability and productivity.

[0017]

【Example】

 An embodiment of the vapor phase growth apparatus of the present invention will be described below with reference to FIGS. 1 and 2. FIG. 1 schematically shows a structure of a reaction part of a vapor phase growth apparatus. A quartz bell jar 2 as a hermetic container is placed on a base plate 1 which is a base, and an airtight reaction chamber 3 is formed. At the same time, a susceptor 4 is provided in the reaction chamber 3 and a plurality of wafers (substrates) 5 ... Are placed.

The susceptor 4 is supported by a susceptor support 6, and the susceptor support 6 is rotatably driven by a susceptor rotation drive unit 7 so that the susceptor 4 can rotate integrally.

A work heating coil 8 is arranged below the susceptor 4 to heat the susceptor 4. Further, a nozzle 9 is provided so as to penetrate the central portion of the susceptor 4, and a reaction gas 10 mixed with a carrier gas is jetted into the reaction chamber 3.

The nozzle 9 is made of quartz glass, and as shown in FIG. 2, a plurality of reaction gas ejection holes 11 ... Is provided (a plurality of stages), and the reaction gas 10 is in a horizontal direction (arrow direction). It is supposed to be ejected to.

Further, between the susceptor 4 and the work heating coil 8, a coil cover 12 made of a quartz product having a structure for covering the work heating coil 8 is provided. Isolated.

A nozzle rotation drive unit 15 using a motor as a drive source is provided below the susceptor rotation drive unit 7. The nozzle 9 includes the susceptor 4, the susceptor support 6, and the susceptor rotation drive unit. Each of the nozzles 7 penetrates through the central portion thereof and is connected to the nozzle rotation driving portion 15 so as to be driven to rotate.

In order to perform vapor phase growth on the wafers 5, the susceptor 4 is rotated, a high frequency power source is supplied to the work heating coil 8 by a high frequency oscillator (not shown), and the reaction gas 10 is rotated while the nozzle 9 is rotated. Squirt out.

As a result, the susceptor 4 is heated, and by receiving the heat, the wafers 5 ... Are heated to the required temperature, and semiconductor crystals are vapor-phase grown on the surfaces of the wafers 5.

Since the nozzle 9 rotates continuously or intermittently, the reaction gas ejection hole 11 also rotates, and the ejected reaction gas 10 concentrates on a part of the quartz bell jar 2 and the coil cover 12 and does not hit, The reaction gas 10 evenly hits the entire circumference of the quartz bell jar 2 and the coil cover 12.

As a result, the reaction product is evenly deposited over the entire circumference of the quartz bell jar 2 and the coil cover 12, and the deposition amount is a fraction of that of the conventional technique. The amount of the attached reaction product falling during the vapor phase growth or rising in the reaction chamber 3 is in proportion to the attachment thickness. This reduces the amount of reaction products that fall or soar during vapor phase growth.

As a result, it is possible to prevent the occurrence of vapor phase growth defects (particles) due to the adhesion of reaction products, and to extend the cycle of disassembly and cleaning of the quartz bell jar, the coil cover, etc. It takes about 8 hours to improve maintainability and productivity.

FIG. 3 shows another embodiment of the present invention, in which the phase (mounting angle) of the nozzle 9 for introducing the reaction gas 10 into the reaction chamber 3 can be changed by a predetermined amount for each batch. A nozzle rotating mechanism 20 is provided as the slip phase adjusting means. The nozzle rotating mechanism 20 is composed of a ratchet gear 21 integrated with the nozzle 9 and a ratchet pawl 23 driven by a solenoid 22. The solenoid 22 operates for each batch to mount the nozzle 9 integral with the ratchet gear 21. It is designed to change the angle.

As a result, the ejection direction of the reaction gas 10 ejected from the nozzle 9 changes for each batch of the vapor phase growth process, so that it is possible to prevent the reaction gas 10 from concentrating and hitting the same portion, and The reaction product can be evenly deposited over the entire circumference. As a result, the reaction products can be prevented from being partially concentrated and deposited, and the vapor phase growth defects due to the adhesion of the reaction products can be prevented, and the quartz bell jar 2 and the coil cover 12 can be decomposed and cleaned. The cycle can be extended, improving maintainability and productivity.

In the description of the other embodiments, the same parts as those in the above-mentioned one embodiment are designated by the same reference numerals, and detailed description thereof will be omitted. The nozzle rotation drive unit 15 may have any configuration as long as it can rotate the nozzle 9, and the nozzle rotation mechanism 20 can move the phase of the nozzle 9 so that the above-described ratchet mechanism is used. Of course, it is not limited to. Of course, various modifications can be made without departing from the spirit of the present invention.

[0031]

[Effect of device]

 Since the present invention has been described above, it has the following effects. According to the vapor phase growth apparatus of claim 1, since the nozzle for introducing the reaction gas into the reaction chamber is rotated continuously or intermittently, the ejection direction of the reaction gas ejected from the nozzle is continuous or Since the reaction gas changes intermittently, the reaction gas can be prevented from concentrating and hitting the same portion, and the reaction product can be evenly deposited over the entire circumference of the reaction chamber. As a result, it is possible to prevent the reaction products from being partially concentrated and deposited, and to prevent vapor phase growth defects due to the adhesion of the reaction products, and also to perform a cycle of disassembling and cleaning the quartz bell jar and the coil cover. It can be extended and maintainability and productivity can be improved.

Further, according to the vapor phase growth apparatus of the second aspect, the nozzle phase adjusting means for changing the phase of the nozzle for introducing the reaction gas into the reaction chamber is provided for each batch of the vapor phase growth process. Since the direction of the ejected reaction gas changes for each batch of the vapor phase growth process, it is possible to prevent the reaction gas from concentrating and hitting the same portion, and the reaction products are evenly distributed over the entire circumference in the reaction chamber. It can be deposited. As a result, the reaction products can be prevented from being partially concentrated and deposited, and the vapor phase growth defects due to the adhesion of the reaction products can be prevented, and the cycle for disassembling and cleaning the quartz bell jar and the coil cover can be prevented. It can be extended, improving maintainability and productivity.

[Brief description of drawings]

FIG. 1 is a sectional view schematically showing an embodiment of a vapor phase growth apparatus of the present invention.

FIG. 2 is an enlarged view of a nozzle portion of the embodiment.

FIG. 3 is a sectional view schematically showing another embodiment of the vapor phase growth apparatus of the present invention.

FIG. 4 is a sectional view schematically showing a conventional vapor phase growth apparatus.

[Explanation of symbols]

1 ... Base (base plate), 2 ... Quartz bell jar (sealed container), 3 ... Reaction chamber, 4 ... Susceptor, 5 ... Wafer, 6
... Susceptor support, 7 ... Susceptor rotation drive unit, 8 ... Work heating coil, 9 ... Nozzle, 10 ... Reactive gas, 11 ... Reactive gas ejection hole, 12 ... Coil cover, 15 ... Nozzle rotation drive unit, 20 ... Nozzle rotation Moving mechanism (nozzle phase adjustment means).

Claims (2)

[Scope of utility model registration request] 1. A sealed container mounted on a base to form a reaction chamber therein, a susceptor for mounting a semiconductor wafer provided in the reaction chamber, and a work heating coil for heating the susceptor, A vapor phase growth apparatus comprising: a nozzle for introducing a reaction gas into a reaction chamber; and a nozzle rotation means for rotating the nozzle continuously or intermittently. 2. A sealed container placed on a base to form a reaction chamber therein, a susceptor for placing a semiconductor wafer provided in the reaction chamber, and a work heating coil for heating the susceptor, A vapor phase growth apparatus comprising: a nozzle for introducing a reaction gas into a reaction chamber; and a nozzle phase adjusting means for changing the phase of the nozzle for each batch of the vapor phase growth process. Phase growth equipment.