JPS60171724A - マスクレスイオン注入法におけるイオンビ−ム径の測定方法 - Google Patents

マスクレスイオン注入法におけるイオンビ−ム径の測定方法

Info

Publication number
JPS60171724A
JPS60171724A JP59027198A JP2719884A JPS60171724A JP S60171724 A JPS60171724 A JP S60171724A JP 59027198 A JP59027198 A JP 59027198A JP 2719884 A JP2719884 A JP 2719884A JP S60171724 A JPS60171724 A JP S60171724A
Authority
JP
Japan
Prior art keywords
ion beam
marker
single crystal
diameter
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59027198A
Other languages
English (en)
Japanese (ja)
Other versions
JPH026218B2 (https=
Inventor
Eizo Miyauchi
宮内　栄三
Akira Takamori
高森　晃
Yasuo Baba
馬場　靖男
Hiroshi Arimoto
宏 有本
Toshio Hashimoto
橋本　寿夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP59027198A priority Critical patent/JPS60171724A/ja
Publication of JPS60171724A publication Critical patent/JPS60171724A/ja
Publication of JPH026218B2 publication Critical patent/JPH026218B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping

Landscapes

  • Electron Beam Exposure (AREA)
  • Measurement Of Radiation (AREA)
JP59027198A 1984-02-17 1984-02-17 マスクレスイオン注入法におけるイオンビ−ム径の測定方法 Granted JPS60171724A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59027198A JPS60171724A (ja) 1984-02-17 1984-02-17 マスクレスイオン注入法におけるイオンビ−ム径の測定方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59027198A JPS60171724A (ja) 1984-02-17 1984-02-17 マスクレスイオン注入法におけるイオンビ−ム径の測定方法

Publications (2)

Publication Number Publication Date
JPS60171724A true JPS60171724A (ja) 1985-09-05
JPH026218B2 JPH026218B2 (https=) 1990-02-08

Family

ID=12214388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59027198A Granted JPS60171724A (ja) 1984-02-17 1984-02-17 マスクレスイオン注入法におけるイオンビ−ム径の測定方法

Country Status (1)

Country Link
JP (1) JPS60171724A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6232117A (ja) * 1985-08-06 1987-02-12 S D S Baiotetsuku:Kk 防菌防黴活性を有するポリエステル樹脂

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6232117A (ja) * 1985-08-06 1987-02-12 S D S Baiotetsuku:Kk 防菌防黴活性を有するポリエステル樹脂

Also Published As

Publication number Publication date
JPH026218B2 (https=) 1990-02-08

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term