JPS60165734A - 半導体領域のマツピング方法 - Google Patents

半導体領域のマツピング方法

Info

Publication number
JPS60165734A
JPS60165734A JP59250663A JP25066384A JPS60165734A JP S60165734 A JPS60165734 A JP S60165734A JP 59250663 A JP59250663 A JP 59250663A JP 25066384 A JP25066384 A JP 25066384A JP S60165734 A JPS60165734 A JP S60165734A
Authority
JP
Japan
Prior art keywords
wafer
electron
semiconductor
charge
semiconductor structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59250663A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0248139B2 (enExample
Inventor
ジヨージ・ヴアシリーヴイツチ・ルキアノフ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24299974&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPS60165734(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS60165734A publication Critical patent/JPS60165734A/ja
Publication of JPH0248139B2 publication Critical patent/JPH0248139B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302Contactless testing
    • G01R31/305Contactless testing using electron beams

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Tests Of Electronic Circuits (AREA)
JP59250663A 1984-01-30 1984-11-29 半導体領域のマツピング方法 Granted JPS60165734A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/575,353 US4575630A (en) 1984-01-30 1984-01-30 Electron-beam testing of semiconductor wafers
US575353 2000-05-19

Publications (2)

Publication Number Publication Date
JPS60165734A true JPS60165734A (ja) 1985-08-28
JPH0248139B2 JPH0248139B2 (enExample) 1990-10-24

Family

ID=24299974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59250663A Granted JPS60165734A (ja) 1984-01-30 1984-11-29 半導体領域のマツピング方法

Country Status (4)

Country Link
US (1) US4575630A (enExample)
EP (1) EP0151720B1 (enExample)
JP (1) JPS60165734A (enExample)
DE (1) DE3464804D1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4665313A (en) * 1985-06-28 1987-05-12 International Business Machines Corporation Apparatus and method for displaying hole-electron pair distributions induced by electron bombardment
US4721910A (en) * 1986-09-12 1988-01-26 American Telephone And Telegraph Company, At&T Bell Laboratories High speed circuit measurements using photoemission sampling
US5460034A (en) * 1992-07-21 1995-10-24 The United States Of America As Represented By The Secretary Of The Air Force Method for measuring and analyzing surface roughness on semiconductor laser etched facets
JPH09184715A (ja) * 1995-12-28 1997-07-15 Hitachi Ltd パターン形状検査装置
KR100544222B1 (ko) * 1997-01-13 2006-04-28 어플라이드 머티어리얼스, 인코포레이티드 웨이퍼의 결함을 검출하는 방법 및 장치
US6504393B1 (en) 1997-07-15 2003-01-07 Applied Materials, Inc. Methods and apparatus for testing semiconductor and integrated circuit structures
US6252412B1 (en) 1999-01-08 2001-06-26 Schlumberger Technologies, Inc. Method of detecting defects in patterned substrates
US6232787B1 (en) * 1999-01-08 2001-05-15 Schlumberger Technologies, Inc. Microstructure defect detection
JP4312910B2 (ja) * 1999-12-02 2009-08-12 株式会社日立製作所 レビューsem
US6359451B1 (en) 2000-02-11 2002-03-19 Image Graphics Incorporated System for contactless testing of printed circuit boards
WO2001058558A2 (en) 2000-02-14 2001-08-16 Eco 3 Max Inc. Process for removing volatile organic compounds from an air stream and apparatus therefor
JP4034500B2 (ja) * 2000-06-19 2008-01-16 株式会社日立製作所 半導体装置の検査方法及び検査装置、及びそれを用いた半導体装置の製造方法
US7528614B2 (en) * 2004-12-22 2009-05-05 Applied Materials, Inc. Apparatus and method for voltage contrast analysis of a wafer using a tilted pre-charging beam

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3772520A (en) * 1972-03-21 1973-11-13 Us Air Force Method for the investigation of thin films on a semiconductor substrate in a scanning electron microscope
US3984683A (en) * 1975-05-27 1976-10-05 Rca Corporation Apparatus and method for analyzing biological cells for malignancy
US4056716A (en) * 1976-06-30 1977-11-01 International Business Machines Corporation Defect inspection of objects such as electronic circuits
US4238686A (en) * 1979-09-05 1980-12-09 Bell Telephone Laboratories, Incorporated Method of analyzing localized nonuniformities in luminescing materials
US4417203A (en) 1981-05-26 1983-11-22 International Business Machines Corporation System for contactless electrical property testing of multi-layer ceramics

Also Published As

Publication number Publication date
EP0151720A1 (en) 1985-08-21
DE3464804D1 (en) 1987-08-20
JPH0248139B2 (enExample) 1990-10-24
EP0151720B1 (en) 1987-07-15
US4575630A (en) 1986-03-11

Similar Documents

Publication Publication Date Title
US5017863A (en) Electro-emissive laser stimulated test
US5589780A (en) IC Analysis system and electron beam probe system and fault isolation method therefor
US8134125B2 (en) Method and apparatus of an inspection system using an electron beam
JPS60165734A (ja) 半導体領域のマツピング方法
JP2000314710A5 (enExample)
JPH11108864A (ja) パターン欠陥検査方法および検査装置
JPH02230649A (ja) 粒子線装置の試料検査方法
US8309923B2 (en) Sample observing method and scanning electron microscope
JP3713457B2 (ja) 基板検査方法及び基板検査装置
JPH10300450A (ja) 荷電粒子ビームを用いたホールの検査方法
JPH0428138B2 (enExample)
JP2003149303A (ja) 電子ビームテストシステム及び電子ビームテスト方法
JPS63269198A (ja) 液晶表示器用駆動回路基板の検査方法
JPS6231931A (ja) 電子ビ−ム照射装置および該装置による試験、測定方法
JP3859446B2 (ja) 半導体基板検査装置および半導体基板検査方法
JPS5853504B2 (ja) 集積回路装置の試験方法
US6294918B1 (en) Method for locating weak circuit having insufficient driving current in IC chips
JP2000188075A (ja) 回路パターンの検査方法および検査装置
US6839646B2 (en) Electron beam test system and electron beam test method
JPS5979544A (ja) 半導体素子の検査方法及び検査装置
JP2969090B2 (ja) 欠陥検査方法
JPH02194541A (ja) 光プローバ
JP2807668B2 (ja) 電子ビーム欠陥検査方法および装置
JPS6327854B2 (enExample)
JPS6220228A (ja) 走査電子顕微鏡画像検出方式