JPS60161667A - ラテラル型トランジスタ - Google Patents
ラテラル型トランジスタInfo
- Publication number
- JPS60161667A JPS60161667A JP59017389A JP1738984A JPS60161667A JP S60161667 A JPS60161667 A JP S60161667A JP 59017389 A JP59017389 A JP 59017389A JP 1738984 A JP1738984 A JP 1738984A JP S60161667 A JPS60161667 A JP S60161667A
- Authority
- JP
- Japan
- Prior art keywords
- region
- epitaxial layer
- gate electrode
- island
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000005215 recombination Methods 0.000 claims description 6
- 230000006798 recombination Effects 0.000 claims description 6
- 238000000926 separation method Methods 0.000 claims description 2
- 238000002955 isolation Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59017389A JPS60161667A (ja) | 1984-02-01 | 1984-02-01 | ラテラル型トランジスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59017389A JPS60161667A (ja) | 1984-02-01 | 1984-02-01 | ラテラル型トランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60161667A true JPS60161667A (ja) | 1985-08-23 |
| JPH0558256B2 JPH0558256B2 (enExample) | 1993-08-26 |
Family
ID=11942638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59017389A Granted JPS60161667A (ja) | 1984-02-01 | 1984-02-01 | ラテラル型トランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60161667A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62250664A (ja) * | 1986-04-23 | 1987-10-31 | Fuji Electric Co Ltd | 半導体集積回路 |
| US5355015A (en) * | 1990-12-13 | 1994-10-11 | National Semiconductor Corporation | High breakdown lateral PNP transistor |
-
1984
- 1984-02-01 JP JP59017389A patent/JPS60161667A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62250664A (ja) * | 1986-04-23 | 1987-10-31 | Fuji Electric Co Ltd | 半導体集積回路 |
| US5355015A (en) * | 1990-12-13 | 1994-10-11 | National Semiconductor Corporation | High breakdown lateral PNP transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0558256B2 (enExample) | 1993-08-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |