JPS60161621A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS60161621A
JPS60161621A JP59017591A JP1759184A JPS60161621A JP S60161621 A JPS60161621 A JP S60161621A JP 59017591 A JP59017591 A JP 59017591A JP 1759184 A JP1759184 A JP 1759184A JP S60161621 A JPS60161621 A JP S60161621A
Authority
JP
Japan
Prior art keywords
resist
pattern
foundation
irregularities
organic layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59017591A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0244140B2 (enrdf_load_stackoverflow
Inventor
Toru Okuma
徹 大熊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP59017591A priority Critical patent/JPS60161621A/ja
Publication of JPS60161621A publication Critical patent/JPS60161621A/ja
Publication of JPH0244140B2 publication Critical patent/JPH0244140B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP59017591A 1984-02-01 1984-02-01 半導体装置の製造方法 Granted JPS60161621A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59017591A JPS60161621A (ja) 1984-02-01 1984-02-01 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59017591A JPS60161621A (ja) 1984-02-01 1984-02-01 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60161621A true JPS60161621A (ja) 1985-08-23
JPH0244140B2 JPH0244140B2 (enrdf_load_stackoverflow) 1990-10-02

Family

ID=11948137

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59017591A Granted JPS60161621A (ja) 1984-02-01 1984-02-01 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60161621A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6266630A (ja) * 1985-09-19 1987-03-26 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPS6286823A (ja) * 1985-10-14 1987-04-21 Tokyo Ohka Kogyo Co Ltd 微細パタ−ン形成方法
JPH05210243A (ja) * 1991-09-27 1993-08-20 Siemens Ag ボトムレジストの製造方法
US6514663B1 (en) 1999-04-28 2003-02-04 Infineon Technologies Ag Bottom resist
US8220654B2 (en) 2008-01-31 2012-07-17 Aisan Kogyo Kabushiki Kaisha Fuel tank structure

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6266630A (ja) * 1985-09-19 1987-03-26 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPS6286823A (ja) * 1985-10-14 1987-04-21 Tokyo Ohka Kogyo Co Ltd 微細パタ−ン形成方法
JPH05210243A (ja) * 1991-09-27 1993-08-20 Siemens Ag ボトムレジストの製造方法
US6514663B1 (en) 1999-04-28 2003-02-04 Infineon Technologies Ag Bottom resist
US8220654B2 (en) 2008-01-31 2012-07-17 Aisan Kogyo Kabushiki Kaisha Fuel tank structure

Also Published As

Publication number Publication date
JPH0244140B2 (enrdf_load_stackoverflow) 1990-10-02

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