JPS6016104B2 - サイリスタ回路の作動方法 - Google Patents

サイリスタ回路の作動方法

Info

Publication number
JPS6016104B2
JPS6016104B2 JP51108394A JP10839476A JPS6016104B2 JP S6016104 B2 JPS6016104 B2 JP S6016104B2 JP 51108394 A JP51108394 A JP 51108394A JP 10839476 A JP10839476 A JP 10839476A JP S6016104 B2 JPS6016104 B2 JP S6016104B2
Authority
JP
Japan
Prior art keywords
gate
thyristor
region
layer
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP51108394A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5235574A (en
Inventor
パトリツク・ド・ブリユイン
ローランド・ジツテイツヒ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC BROWN BOVERI and CIE
Original Assignee
BBC BROWN BOVERI and CIE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC BROWN BOVERI and CIE filed Critical BBC BROWN BOVERI and CIE
Publication of JPS5235574A publication Critical patent/JPS5235574A/ja
Publication of JPS6016104B2 publication Critical patent/JPS6016104B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192Base regions of thyristors
    • H10D62/206Cathode base regions of thyristors
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/505Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
    • H02M7/515Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
    • H02M7/523Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only with LC-resonance circuit in the main circuit
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/241Asymmetrical thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60Impurity distributions or concentrations

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Power Conversion In General (AREA)
JP51108394A 1975-09-09 1976-09-09 サイリスタ回路の作動方法 Expired JPS6016104B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH1169575A CH589942A5 (enrdf_load_stackoverflow) 1975-09-09 1975-09-09
CH11695/75 1975-09-09

Publications (2)

Publication Number Publication Date
JPS5235574A JPS5235574A (en) 1977-03-18
JPS6016104B2 true JPS6016104B2 (ja) 1985-04-23

Family

ID=4375973

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51108394A Expired JPS6016104B2 (ja) 1975-09-09 1976-09-09 サイリスタ回路の作動方法

Country Status (7)

Country Link
JP (1) JPS6016104B2 (enrdf_load_stackoverflow)
CH (1) CH589942A5 (enrdf_load_stackoverflow)
DE (1) DE2543909A1 (enrdf_load_stackoverflow)
FR (1) FR2324125A1 (enrdf_load_stackoverflow)
GB (1) GB1558886A (enrdf_load_stackoverflow)
NO (1) NO763077L (enrdf_load_stackoverflow)
SE (1) SE416600B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6455005A (en) * 1987-08-25 1989-03-02 Yao Seisakusho Kk End processor for covered wire

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57176766A (en) * 1981-04-03 1982-10-30 Westinghouse Electric Corp Gate control switch
EP0144876B1 (de) * 1983-12-07 1988-03-09 BBC Brown Boveri AG Halbleiterbauelement
JPH09181092A (ja) * 1995-12-27 1997-07-11 Toshiba Corp 半導体装置およびその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1489946A (fr) * 1965-07-29 1967-07-28 Gen Electric Perfectionnements aux dispositifs à semiconducteurs
DE1934866A1 (de) * 1968-08-05 1970-05-14 Rca Corp Halbleiterbauelement
NL165333C (nl) * 1969-05-20 Bbc Brown Boveri & Cie Bestuurbaar halfgeleiderelement met vier laagvormige zones van afwisselend geleidingstype.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6455005A (en) * 1987-08-25 1989-03-02 Yao Seisakusho Kk End processor for covered wire

Also Published As

Publication number Publication date
SE7609773L (sv) 1977-03-10
FR2324125A1 (fr) 1977-04-08
NO763077L (enrdf_load_stackoverflow) 1977-03-10
CH589942A5 (enrdf_load_stackoverflow) 1977-07-29
SE416600B (sv) 1981-01-19
FR2324125B1 (enrdf_load_stackoverflow) 1980-05-09
DE2543909A1 (de) 1977-03-17
GB1558886A (en) 1980-01-09
JPS5235574A (en) 1977-03-18

Similar Documents

Publication Publication Date Title
US5387805A (en) Field controlled thyristor
JPH0534834B2 (enrdf_load_stackoverflow)
JPH03155677A (ja) 伝導度変調型mosfet
US4238761A (en) Integrated gate assisted turn-off, amplifying gate thyristor with narrow lipped turn-off diode
JPS6016104B2 (ja) サイリスタ回路の作動方法
JPH0122748B2 (enrdf_load_stackoverflow)
US4177479A (en) Electrical circuit with a high-frequency thyristor fired by blocking leakage current
JP3695249B2 (ja) 半導体装置及びそれを用いた電力変換装置
JPH0612823B2 (ja) 二方向性の電力用高速mosfet素子
US4857977A (en) Lateral metal-oxide-semiconductor controlled triacs
WO2015179718A9 (en) Construction and optical control of bipolar junction transistors and thyristors
JPS59108353A (ja) 固有スイツチオン特性を有するサイリスタ構造及び二方向性デバイスの構造へのその応用
JPH0637335A (ja) 埋込み構造もしくは切込み構造を有する静電誘導ダイオード
KR940008259B1 (ko) 반도체장치 및 그 제조방법
JPS639386B2 (enrdf_load_stackoverflow)
JPS6123667B2 (enrdf_load_stackoverflow)
WO1993022798A1 (en) Base resistance controlled mos gated thyristor with improved turn-off characteristics
JP3214236B2 (ja) 半導体装置及び電力変換装置
JP2753331B2 (ja) 半導体装置
JPH0640581B2 (ja) スイツチング素子
JP3149054B2 (ja) 自己保護機能を有する半導体デバイス
CA1065493A (en) Gate-assisted thyristor and method including cathode shunts
RU2197034C1 (ru) Высоковольтный диод с резким восстановлением обратного сопротивления
JPS60189262A (ja) 逆導通ゲ−トタ−ンオフサイリスタ
CN119584612A (zh) 一种精准控制转折电压的自保护电控晶闸管