GB1558886A - High-frequency thyristor - Google Patents

High-frequency thyristor Download PDF

Info

Publication number
GB1558886A
GB1558886A GB36834/76A GB3683476A GB1558886A GB 1558886 A GB1558886 A GB 1558886A GB 36834/76 A GB36834/76 A GB 36834/76A GB 3683476 A GB3683476 A GB 3683476A GB 1558886 A GB1558886 A GB 1558886A
Authority
GB
United Kingdom
Prior art keywords
thyristor
gate
zone
emitter
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB36834/76A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC BROWN BOVERI and CIE
BBC Brown Boveri AG Switzerland
Original Assignee
BBC BROWN BOVERI and CIE
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC BROWN BOVERI and CIE, BBC Brown Boveri AG Switzerland filed Critical BBC BROWN BOVERI and CIE
Publication of GB1558886A publication Critical patent/GB1558886A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192Base regions of thyristors
    • H10D62/206Cathode base regions of thyristors
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/505Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
    • H02M7/515Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
    • H02M7/523Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only with LC-resonance circuit in the main circuit
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/241Asymmetrical thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60Impurity distributions or concentrations

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Power Conversion In General (AREA)
GB36834/76A 1975-09-09 1976-09-06 High-frequency thyristor Expired GB1558886A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1169575A CH589942A5 (enrdf_load_stackoverflow) 1975-09-09 1975-09-09

Publications (1)

Publication Number Publication Date
GB1558886A true GB1558886A (en) 1980-01-09

Family

ID=4375973

Family Applications (1)

Application Number Title Priority Date Filing Date
GB36834/76A Expired GB1558886A (en) 1975-09-09 1976-09-06 High-frequency thyristor

Country Status (7)

Country Link
JP (1) JPS6016104B2 (enrdf_load_stackoverflow)
CH (1) CH589942A5 (enrdf_load_stackoverflow)
DE (1) DE2543909A1 (enrdf_load_stackoverflow)
FR (1) FR2324125A1 (enrdf_load_stackoverflow)
GB (1) GB1558886A (enrdf_load_stackoverflow)
NO (1) NO763077L (enrdf_load_stackoverflow)
SE (1) SE416600B (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57176766A (en) * 1981-04-03 1982-10-30 Westinghouse Electric Corp Gate control switch
EP0144876B1 (de) * 1983-12-07 1988-03-09 BBC Brown Boveri AG Halbleiterbauelement
JPS6455005A (en) * 1987-08-25 1989-03-02 Yao Seisakusho Kk End processor for covered wire
JPH09181092A (ja) * 1995-12-27 1997-07-11 Toshiba Corp 半導体装置およびその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1489946A (fr) * 1965-07-29 1967-07-28 Gen Electric Perfectionnements aux dispositifs à semiconducteurs
DE1934866A1 (de) * 1968-08-05 1970-05-14 Rca Corp Halbleiterbauelement
NL165333C (nl) * 1969-05-20 Bbc Brown Boveri & Cie Bestuurbaar halfgeleiderelement met vier laagvormige zones van afwisselend geleidingstype.

Also Published As

Publication number Publication date
SE7609773L (sv) 1977-03-10
FR2324125A1 (fr) 1977-04-08
NO763077L (enrdf_load_stackoverflow) 1977-03-10
JPS6016104B2 (ja) 1985-04-23
CH589942A5 (enrdf_load_stackoverflow) 1977-07-29
SE416600B (sv) 1981-01-19
FR2324125B1 (enrdf_load_stackoverflow) 1980-05-09
DE2543909A1 (de) 1977-03-17
JPS5235574A (en) 1977-03-18

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
746 Register noted 'licences of right' (sect. 46/1977)
PCNP Patent ceased through non-payment of renewal fee