FR2324125A1 - Montage electrique a thyristor haute frequence - Google Patents

Montage electrique a thyristor haute frequence

Info

Publication number
FR2324125A1
FR2324125A1 FR7626908A FR7626908A FR2324125A1 FR 2324125 A1 FR2324125 A1 FR 2324125A1 FR 7626908 A FR7626908 A FR 7626908A FR 7626908 A FR7626908 A FR 7626908A FR 2324125 A1 FR2324125 A1 FR 2324125A1
Authority
FR
France
Prior art keywords
high frequency
electrical mounting
frequency thyristor
thyristor electrical
mounting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7626908A
Other languages
English (en)
Other versions
FR2324125B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland filed Critical BBC Brown Boveri AG Switzerland
Publication of FR2324125A1 publication Critical patent/FR2324125A1/fr
Application granted granted Critical
Publication of FR2324125B1 publication Critical patent/FR2324125B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7432—Asymmetrical thyristors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/505—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
    • H02M7/515—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
    • H02M7/523—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only with LC-resonance circuit in the main circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Power Conversion In General (AREA)
FR7626908A 1975-09-09 1976-09-07 Montage electrique a thyristor haute frequence Granted FR2324125A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1169575A CH589942A5 (fr) 1975-09-09 1975-09-09

Publications (2)

Publication Number Publication Date
FR2324125A1 true FR2324125A1 (fr) 1977-04-08
FR2324125B1 FR2324125B1 (fr) 1980-05-09

Family

ID=4375973

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7626908A Granted FR2324125A1 (fr) 1975-09-09 1976-09-07 Montage electrique a thyristor haute frequence

Country Status (7)

Country Link
JP (1) JPS6016104B2 (fr)
CH (1) CH589942A5 (fr)
DE (1) DE2543909A1 (fr)
FR (1) FR2324125A1 (fr)
GB (1) GB1558886A (fr)
NO (1) NO763077L (fr)
SE (1) SE416600B (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0144876A2 (fr) * 1983-12-07 1985-06-19 BBC Brown Boveri AG Dispositif à semi-conducteurs
EP0782199A3 (fr) * 1995-12-27 1999-07-28 Kabushiki Kaisha Toshiba Dispositif semi-conducteur à tension élevée et procédé de fabrication

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57176766A (en) * 1981-04-03 1982-10-30 Westinghouse Electric Corp Gate control switch
JPS6455005A (en) * 1987-08-25 1989-03-02 Yao Seisakusho Kk End processor for covered wire

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1489946A (fr) * 1965-07-29 1967-07-28 Gen Electric Perfectionnements aux dispositifs à semiconducteurs
FR2015064A1 (fr) * 1968-08-05 1970-04-24 Rca Corp
FR2043541A7 (fr) * 1969-05-20 1971-02-19 Bbc Brown Boveri & Cie

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1489946A (fr) * 1965-07-29 1967-07-28 Gen Electric Perfectionnements aux dispositifs à semiconducteurs
FR2015064A1 (fr) * 1968-08-05 1970-04-24 Rca Corp
FR2043541A7 (fr) * 1969-05-20 1971-02-19 Bbc Brown Boveri & Cie

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NV8011/66 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0144876A2 (fr) * 1983-12-07 1985-06-19 BBC Brown Boveri AG Dispositif à semi-conducteurs
EP0144876A3 (en) * 1983-12-07 1985-07-03 Bbc Aktiengesellschaft Brown, Boveri & Cie. Semiconductor device
EP0782199A3 (fr) * 1995-12-27 1999-07-28 Kabushiki Kaisha Toshiba Dispositif semi-conducteur à tension élevée et procédé de fabrication

Also Published As

Publication number Publication date
CH589942A5 (fr) 1977-07-29
SE416600B (sv) 1981-01-19
JPS5235574A (en) 1977-03-18
NO763077L (fr) 1977-03-10
GB1558886A (en) 1980-01-09
JPS6016104B2 (ja) 1985-04-23
FR2324125B1 (fr) 1980-05-09
SE7609773L (sv) 1977-03-10
DE2543909A1 (de) 1977-03-17

Similar Documents

Publication Publication Date Title
DK559676A (da) Styrekredslob for en selvstartende elektromotor
FR2274128A1 (fr) Interrupteur electrique
BR7606409A (pt) Maquina eletrica sem anel coletor
BE839541A (fr) Machine electrique
FR2290020A1 (fr) Interrupteur electrique
BE838869A (fr) Disjoncteur electrique a autosoufflage
FR2339148A1 (fr) Four electrique a haute frequence
BE864807R (fr) Four electrique a haute frequence
FR2318008A1 (fr) Rasoir electrique
FR2314597A1 (fr) Raccord electrique coaxial tournant
FR2305887A1 (fr) Montage comportant un regulateur de frequence
FR2321797A1 (fr) Machine electrique unipolaire
BE820645A (fr) Cable electrique a haute tension
FR2324125A1 (fr) Montage electrique a thyristor haute frequence
BE835318A (fr) Bobine electrique ouvrante
BR7607161A (pt) Maquina eletrica sem anel coletor
SE414259B (sv) Elektronisk kopplingsanordning for styrbar frekvensdelning
FR2298417A1 (fr) Rasoir electrique
FR2282742A2 (fr) Perfectionnements aux onduleurs fournissant un courant alternatif de frequence elevee
RO69486A (fr) Accumulateur electrique
FR2292322A1 (fr) Commutateur electrique
FR2275868A1 (fr) Interrupteur electrique
FI772558A (fi) Foerfarande foer framstaellning av elektriska stapel- eller skiktkondensatorer
BE808300A (fr) Isolateur electrique a haute tension
FR2339238A1 (fr) Isolateur electrique

Legal Events

Date Code Title Description
ST Notification of lapse