JPS60158670A - 薄膜トランジスタとその製造方法 - Google Patents

薄膜トランジスタとその製造方法

Info

Publication number
JPS60158670A
JPS60158670A JP59014057A JP1405784A JPS60158670A JP S60158670 A JPS60158670 A JP S60158670A JP 59014057 A JP59014057 A JP 59014057A JP 1405784 A JP1405784 A JP 1405784A JP S60158670 A JPS60158670 A JP S60158670A
Authority
JP
Japan
Prior art keywords
thin film
film
gate
main electrode
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59014057A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0572749B2 (enrdf_load_stackoverflow
Inventor
Masafumi Shinpo
新保　雅文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP59014057A priority Critical patent/JPS60158670A/ja
Publication of JPS60158670A publication Critical patent/JPS60158670A/ja
Publication of JPH0572749B2 publication Critical patent/JPH0572749B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Thin Film Transistor (AREA)
JP59014057A 1984-01-28 1984-01-28 薄膜トランジスタとその製造方法 Granted JPS60158670A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59014057A JPS60158670A (ja) 1984-01-28 1984-01-28 薄膜トランジスタとその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59014057A JPS60158670A (ja) 1984-01-28 1984-01-28 薄膜トランジスタとその製造方法

Publications (2)

Publication Number Publication Date
JPS60158670A true JPS60158670A (ja) 1985-08-20
JPH0572749B2 JPH0572749B2 (enrdf_load_stackoverflow) 1993-10-12

Family

ID=11850456

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59014057A Granted JPS60158670A (ja) 1984-01-28 1984-01-28 薄膜トランジスタとその製造方法

Country Status (1)

Country Link
JP (1) JPS60158670A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62171161A (ja) * 1986-01-23 1987-07-28 Nec Corp 薄膜半導体素子
JPS6446982A (en) * 1987-08-17 1989-02-21 Casio Computer Co Ltd Manufacture of thin-film transistor
JPH0221663A (ja) * 1988-07-08 1990-01-24 Sharp Corp 薄膜トランジスタの製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59232385A (ja) * 1983-06-15 1984-12-27 株式会社東芝 アクテイブマトリクス型表示装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59232385A (ja) * 1983-06-15 1984-12-27 株式会社東芝 アクテイブマトリクス型表示装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62171161A (ja) * 1986-01-23 1987-07-28 Nec Corp 薄膜半導体素子
JPS6446982A (en) * 1987-08-17 1989-02-21 Casio Computer Co Ltd Manufacture of thin-film transistor
JPH0221663A (ja) * 1988-07-08 1990-01-24 Sharp Corp 薄膜トランジスタの製造方法

Also Published As

Publication number Publication date
JPH0572749B2 (enrdf_load_stackoverflow) 1993-10-12

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