JPS60154529A - ドライエツチング装置 - Google Patents

ドライエツチング装置

Info

Publication number
JPS60154529A
JPS60154529A JP1057384A JP1057384A JPS60154529A JP S60154529 A JPS60154529 A JP S60154529A JP 1057384 A JP1057384 A JP 1057384A JP 1057384 A JP1057384 A JP 1057384A JP S60154529 A JPS60154529 A JP S60154529A
Authority
JP
Japan
Prior art keywords
temperature
chamber
etching
etching process
specimen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1057384A
Other languages
English (en)
Japanese (ja)
Other versions
JPH059937B2 (enrdf_load_stackoverflow
Inventor
Kazuhiro Tanaka
和裕 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1057384A priority Critical patent/JPS60154529A/ja
Publication of JPS60154529A publication Critical patent/JPS60154529A/ja
Publication of JPH059937B2 publication Critical patent/JPH059937B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP1057384A 1984-01-23 1984-01-23 ドライエツチング装置 Granted JPS60154529A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1057384A JPS60154529A (ja) 1984-01-23 1984-01-23 ドライエツチング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1057384A JPS60154529A (ja) 1984-01-23 1984-01-23 ドライエツチング装置

Publications (2)

Publication Number Publication Date
JPS60154529A true JPS60154529A (ja) 1985-08-14
JPH059937B2 JPH059937B2 (enrdf_load_stackoverflow) 1993-02-08

Family

ID=11753975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1057384A Granted JPS60154529A (ja) 1984-01-23 1984-01-23 ドライエツチング装置

Country Status (1)

Country Link
JP (1) JPS60154529A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63274147A (ja) * 1987-05-06 1988-11-11 Hitachi Ltd ドライエッチング方法
JPH01134929A (ja) * 1987-11-19 1989-05-26 Tokuda Seisakusho Ltd ドライエッチング方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5767173A (en) * 1980-10-09 1982-04-23 Mitsubishi Electric Corp Plasma etching device
JPS58153332A (ja) * 1982-03-08 1983-09-12 Mitsubishi Electric Corp ドライエツチング装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5767173A (en) * 1980-10-09 1982-04-23 Mitsubishi Electric Corp Plasma etching device
JPS58153332A (ja) * 1982-03-08 1983-09-12 Mitsubishi Electric Corp ドライエツチング装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63274147A (ja) * 1987-05-06 1988-11-11 Hitachi Ltd ドライエッチング方法
JPH01134929A (ja) * 1987-11-19 1989-05-26 Tokuda Seisakusho Ltd ドライエッチング方法

Also Published As

Publication number Publication date
JPH059937B2 (enrdf_load_stackoverflow) 1993-02-08

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term