JPS60149776A - デバイス及びその製作方法 - Google Patents
デバイス及びその製作方法Info
- Publication number
- JPS60149776A JPS60149776A JP59219405A JP21940584A JPS60149776A JP S60149776 A JPS60149776 A JP S60149776A JP 59219405 A JP59219405 A JP 59219405A JP 21940584 A JP21940584 A JP 21940584A JP S60149776 A JPS60149776 A JP S60149776A
- Authority
- JP
- Japan
- Prior art keywords
- indium
- iron
- indium phosphide
- ferrocene
- deposition gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 49
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 39
- 229910052742 iron Inorganic materials 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 25
- 239000002019 doping agent Substances 0.000 claims description 21
- 239000002243 precursor Substances 0.000 claims description 20
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 15
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 claims description 15
- 229910052738 indium Inorganic materials 0.000 claims description 12
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims description 9
- 239000011574 phosphorus Substances 0.000 claims description 9
- -1 vinyl ferrocene Chemical compound 0.000 claims description 8
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 5
- NBFCJULAAWWTBL-UHFFFAOYSA-N buta-1,3-diene;carbon monoxide;iron Chemical group [Fe].[O+]#[C-].[O+]#[C-].[O+]#[C-].C=CC=C NBFCJULAAWWTBL-UHFFFAOYSA-N 0.000 claims description 4
- ZTTKKVNUDLGBCI-UHFFFAOYSA-N ethyl 2-chloro-6-hydroxybenzoate Chemical group CCOC(=O)C1=C(O)C=CC=C1Cl ZTTKKVNUDLGBCI-UHFFFAOYSA-N 0.000 claims description 4
- GXQCGPVEDZFCGW-UHFFFAOYSA-N 2,3-dihydro-1h-pyrrolo[3,4-c]pyridine;dihydrochloride Chemical group Cl.Cl.N1=CC=C2CNCC2=C1 GXQCGPVEDZFCGW-UHFFFAOYSA-N 0.000 claims description 2
- KYMNSBSWJPFUJH-UHFFFAOYSA-N iron;5-methylcyclopenta-1,3-diene;methylcyclopentane Chemical compound [Fe].C[C-]1C=CC=C1.C[C-]1[CH-][CH-][CH-][CH-]1 KYMNSBSWJPFUJH-UHFFFAOYSA-N 0.000 claims description 2
- 230000005693 optoelectronics Effects 0.000 claims description 2
- JAUSVMOUJXNCJQ-UHFFFAOYSA-N [Fe].C1=CC=CCCC1 Chemical compound [Fe].C1=CC=CCCC1 JAUSVMOUJXNCJQ-UHFFFAOYSA-N 0.000 claims 1
- 239000000539 dimer Substances 0.000 claims 1
- 229920002554 vinyl polymer Polymers 0.000 claims 1
- 239000007789 gas Substances 0.000 description 33
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 21
- 239000001257 hydrogen Substances 0.000 description 17
- 229910052739 hydrogen Inorganic materials 0.000 description 17
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 13
- YWWDBCBWQNCYNR-UHFFFAOYSA-N trimethylphosphine Chemical compound CP(C)C YWWDBCBWQNCYNR-UHFFFAOYSA-N 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 8
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 208000012868 Overgrowth Diseases 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 150000002472 indium compounds Chemical class 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical class C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000000859 sublimation Methods 0.000 description 3
- 230000008022 sublimation Effects 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000002028 premature Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 2
- IHGSAQHSAGRWNI-UHFFFAOYSA-N 1-(4-bromophenyl)-2,2,2-trifluoroethanone Chemical compound FC(F)(F)C(=O)C1=CC=C(Br)C=C1 IHGSAQHSAGRWNI-UHFFFAOYSA-N 0.000 description 1
- WFUDBPZFGCNRDM-UHFFFAOYSA-N 1-butylcyclopenta-1,3-diene;cyclopenta-1,3-diene;iron(2+) Chemical compound [Fe+2].C=1C=C[CH-]C=1.CCCCC1=CC=C[CH-]1 WFUDBPZFGCNRDM-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910021555 Chromium Chloride Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 235000008708 Morus alba Nutrition 0.000 description 1
- 240000000249 Morus alba Species 0.000 description 1
- GBOGAFPRHXVKNT-UHFFFAOYSA-N [Fe].[In] Chemical compound [Fe].[In] GBOGAFPRHXVKNT-UHFFFAOYSA-N 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- KMEIFXQHEFYFMU-UHFFFAOYSA-N [K].[In] Chemical compound [K].[In] KMEIFXQHEFYFMU-UHFFFAOYSA-N 0.000 description 1
- 125000005234 alkyl aluminium group Chemical group 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 150000001495 arsenic compounds Chemical class 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- QSWDMMVNRMROPK-UHFFFAOYSA-K chromium(3+) trichloride Chemical compound [Cl-].[Cl-].[Cl-].[Cr+3] QSWDMMVNRMROPK-UHFFFAOYSA-K 0.000 description 1
- VGBAECKRTWHKHC-UHFFFAOYSA-N cyclopenta-1,3-diene;1-ethenylcyclopenta-1,3-diene;iron(2+) Chemical compound [Fe+2].C=1C=C[CH-]C=1.[CH2-]C=C1C=CC=C1 VGBAECKRTWHKHC-UHFFFAOYSA-N 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- KWLSQQRRSAWBOQ-UHFFFAOYSA-N dipotassioarsanylpotassium Chemical compound [K][As]([K])[K] KWLSQQRRSAWBOQ-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- UBWKPPKUHRWIDJ-UHFFFAOYSA-N iron penta-1,3-diene Chemical compound C=CC=CC.[Fe] UBWKPPKUHRWIDJ-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 239000010802 sludge Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- RXJKFRMDXUJTEX-UHFFFAOYSA-N triethylphosphine Chemical compound CCP(CC)CC RXJKFRMDXUJTEX-UHFFFAOYSA-N 0.000 description 1
- BSRUTWLOBPCVAB-UHFFFAOYSA-N trimethylindigane;trimethylphosphane Chemical compound CP(C)C.C[In](C)C BSRUTWLOBPCVAB-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US54421583A | 1983-10-21 | 1983-10-21 | |
| US544215 | 1983-10-21 | ||
| US60437084A | 1984-04-26 | 1984-04-26 | |
| US604370 | 1984-04-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60149776A true JPS60149776A (ja) | 1985-08-07 |
| JPH0582734B2 JPH0582734B2 (OSRAM) | 1993-11-22 |
Family
ID=27067538
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59219405A Granted JPS60149776A (ja) | 1983-10-21 | 1984-10-20 | デバイス及びその製作方法 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0141561B1 (OSRAM) |
| JP (1) | JPS60149776A (OSRAM) |
| CA (1) | CA1210526A (OSRAM) |
| DE (1) | DE3479138D1 (OSRAM) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63193897A (ja) * | 1987-01-20 | 1988-08-11 | アメリカン テレフォン アンド テレグラフ カムパニー | 鉄をドープした、インジウムをベースとする３−５族化合物半導体の気相エピタキシャル成長法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0403293B1 (en) * | 1989-06-16 | 1995-12-06 | Kabushiki Kaisha Toshiba | Method of manufacturing III-V group compound semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5489566A (en) * | 1977-12-27 | 1979-07-16 | Fujitsu Ltd | Growth method of compound semiconductor crystal |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB885514A (en) * | 1957-01-18 | 1961-12-28 | Union Carbide Corp | Acetylene transition metal carbonyl derivatives |
| US3164621A (en) * | 1963-04-12 | 1965-01-05 | Ethyl Corp | Cyclo-octadiene iron subgroup metal carbonyls |
| US3421952A (en) * | 1966-02-02 | 1969-01-14 | Texas Instruments Inc | Method of making high resistivity group iii-v compounds and alloys doped with iron from an iron-arsenide source |
| JPS5347765A (en) * | 1976-10-13 | 1978-04-28 | Matsushita Electric Ind Co Ltd | Semiconductor crystal growth method |
| US4314873A (en) * | 1977-07-05 | 1982-02-09 | The United States Of America As Represented By The Secretary Of The Navy | Method for depositing heteroepitaxially InP on GaAs semi-insulating substrates |
| GB1600286A (en) * | 1977-07-19 | 1981-10-14 | Secr Defence | Doping of group iii-v semiconductor materials |
-
1984
- 1984-09-12 CA CA000463003A patent/CA1210526A/en not_active Expired
- 1984-10-15 EP EP19840307026 patent/EP0141561B1/en not_active Expired
- 1984-10-15 DE DE8484307026T patent/DE3479138D1/de not_active Expired
- 1984-10-20 JP JP59219405A patent/JPS60149776A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5489566A (en) * | 1977-12-27 | 1979-07-16 | Fujitsu Ltd | Growth method of compound semiconductor crystal |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63193897A (ja) * | 1987-01-20 | 1988-08-11 | アメリカン テレフォン アンド テレグラフ カムパニー | 鉄をドープした、インジウムをベースとする３−５族化合物半導体の気相エピタキシャル成長法 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3479138D1 (en) | 1989-08-31 |
| JPH0582734B2 (OSRAM) | 1993-11-22 |
| EP0141561A3 (en) | 1986-04-02 |
| EP0141561A2 (en) | 1985-05-15 |
| CA1210526A (en) | 1986-08-26 |
| EP0141561B1 (en) | 1989-07-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |