DE3479138D1 - A process for producing devices having semi-insulating indium phosphide based compositions - Google Patents

A process for producing devices having semi-insulating indium phosphide based compositions

Info

Publication number
DE3479138D1
DE3479138D1 DE8484307026T DE3479138T DE3479138D1 DE 3479138 D1 DE3479138 D1 DE 3479138D1 DE 8484307026 T DE8484307026 T DE 8484307026T DE 3479138 T DE3479138 T DE 3479138T DE 3479138 D1 DE3479138 D1 DE 3479138D1
Authority
DE
Germany
Prior art keywords
semi
indium phosphide
based compositions
producing devices
phosphide based
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484307026T
Other languages
German (de)
English (en)
Inventor
Wilbur Dexter Johnston
Judith Ann Long
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Application granted granted Critical
Publication of DE3479138D1 publication Critical patent/DE3479138D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE8484307026T 1983-10-21 1984-10-15 A process for producing devices having semi-insulating indium phosphide based compositions Expired DE3479138D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54421583A 1983-10-21 1983-10-21
US60437084A 1984-04-26 1984-04-26

Publications (1)

Publication Number Publication Date
DE3479138D1 true DE3479138D1 (en) 1989-08-31

Family

ID=27067538

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484307026T Expired DE3479138D1 (en) 1983-10-21 1984-10-15 A process for producing devices having semi-insulating indium phosphide based compositions

Country Status (4)

Country Link
EP (1) EP0141561B1 (OSRAM)
JP (1) JPS60149776A (OSRAM)
CA (1) CA1210526A (OSRAM)
DE (1) DE3479138D1 (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2036260T3 (es) * 1987-01-20 1993-05-16 American Telephone And Telegraph Company Crecimiento epitaxial en fase vapor de semiconductores de compuestos del grupo iii-v, a base de indio, impurificados con hierro.
EP0403293B1 (en) * 1989-06-16 1995-12-06 Kabushiki Kaisha Toshiba Method of manufacturing III-V group compound semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB885514A (en) * 1957-01-18 1961-12-28 Union Carbide Corp Acetylene transition metal carbonyl derivatives
US3164621A (en) * 1963-04-12 1965-01-05 Ethyl Corp Cyclo-octadiene iron subgroup metal carbonyls
US3421952A (en) * 1966-02-02 1969-01-14 Texas Instruments Inc Method of making high resistivity group iii-v compounds and alloys doped with iron from an iron-arsenide source
JPS5347765A (en) * 1976-10-13 1978-04-28 Matsushita Electric Ind Co Ltd Semiconductor crystal growth method
US4314873A (en) * 1977-07-05 1982-02-09 The United States Of America As Represented By The Secretary Of The Navy Method for depositing heteroepitaxially InP on GaAs semi-insulating substrates
GB1600286A (en) * 1977-07-19 1981-10-14 Secr Defence Doping of group iii-v semiconductor materials
JPS5489566A (en) * 1977-12-27 1979-07-16 Fujitsu Ltd Growth method of compound semiconductor crystal

Also Published As

Publication number Publication date
JPH0582734B2 (OSRAM) 1993-11-22
JPS60149776A (ja) 1985-08-07
EP0141561A3 (en) 1986-04-02
EP0141561A2 (en) 1985-05-15
CA1210526A (en) 1986-08-26
EP0141561B1 (en) 1989-07-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN

8339 Ceased/non-payment of the annual fee