JPS6014774B2 - 絶縁耐力の優れたポリ弗化ビニリデンフイルム及びその製造方法 - Google Patents

絶縁耐力の優れたポリ弗化ビニリデンフイルム及びその製造方法

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Publication number
JPS6014774B2
JPS6014774B2 JP53036588A JP3658878A JPS6014774B2 JP S6014774 B2 JPS6014774 B2 JP S6014774B2 JP 53036588 A JP53036588 A JP 53036588A JP 3658878 A JP3658878 A JP 3658878A JP S6014774 B2 JPS6014774 B2 JP S6014774B2
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JP
Japan
Prior art keywords
polyvinylidene fluoride
film
dielectric strength
dielectric
fluoride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53036588A
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English (en)
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JPS54129064A (en
Inventor
秀幸 橋爪
正 土屋
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Kureha Corp
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Kureha Corp
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Priority to JP53036588A priority Critical patent/JPS6014774B2/ja
Priority to DE2911856A priority patent/DE2911856C3/de
Priority to US06/024,802 priority patent/US4407887A/en
Priority to GB7910757A priority patent/GB2019088B/en
Priority to NL7902451A priority patent/NL7902451A/xx
Priority to FR7908119A priority patent/FR2421191A1/fr
Publication of JPS54129064A publication Critical patent/JPS54129064A/ja
Publication of JPS6014774B2 publication Critical patent/JPS6014774B2/ja
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/02—Electrets, i.e. having a permanently-polarised dielectric
    • H01G7/021—Electrets, i.e. having a permanently-polarised dielectric having an organic dielectric
    • H01G7/023—Electrets, i.e. having a permanently-polarised dielectric having an organic dielectric of macromolecular compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/30—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
    • B32B27/306—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising vinyl acetate or vinyl alcohol (co)polymers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/32—Layered products comprising a layer of synthetic resin comprising polyolefins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
    • B32B27/365—Layered products comprising a layer of synthetic resin comprising polyesters comprising polycarbonates
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
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    • H10N30/857—Macromolecular compositions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2027/00—Use of polyvinylhalogenides or derivatives thereof as moulding material
    • B29K2027/12—Use of polyvinylhalogenides or derivatives thereof as moulding material containing fluorine
    • B29K2027/16—PVDF, i.e. polyvinylidene fluoride
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/204—Di-electric
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2323/00—Polyalkenes
    • B32B2323/04—Polyethylene
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2323/00—Polyalkenes
    • B32B2323/10—Polypropylene
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2327/00—Polyvinylhalogenides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less
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    • Y10T428/31909—Next to second addition polymer from unsaturated monomers
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Description

【発明の詳細な説明】 本発明は、絶縁耐力の優れたポリ弗化どニリデンフィル
ム及びその製造方法に関する。
ポリ弗化ビニリデンフィルムは誘電率が大きいばかりで
なく、圧電性、篤電性を有し、電気材料として極めて特
異なものである。
かかる諸電気物性をより一層高めるべく絶縁耐力を改良
することは期待されていたのである。しかしながら、ポ
リ弗化ビニリデンフィルムの絶縁破壊現象は他のポリマ
ーと較べ複雑であり、かかる絶縁耐力の向上は極めて困
難な課題であった。ポリ発化ビニリデンフイルムにフィ
ッシュアィと俗称している目‘こ見える大きさの異物が
存在する場合は、かかる目‘こ見える大きさの異物が存
在する個所から絶縁破壊が生ずることは初期の研究段階
で明らかとなった。しかしかかる目に見える大きさの異
物が存在しない部分に於る絶縁破壊が何によって生じて
いるかは、その原因が非常に多く考えられる為全く不明
であった。まず、考えられたのは、自‘こ見えないが光
学顕微鏡で観察される程度の微小な異物の存在である。
この他の要因として成形時に生ずるボィド或は傷も考え
られ、或は重合時及び成形時に混入又は分解により生じ
た不純物イオンが考えられ、更には現在でも絶縁耐力が
常温で８ＭＶ／の，１００℃で６ＭＶ／伽であり、他の
ポリマーに較べ絶縁耐力が大きい故、総綾耐力は限界に
来ているとも考えられたのである。かかる多くの原因が
考えられたためポリ弗化ビニリデンフィルムの絶縁耐力
の改良方法は全く報告されていなかったのであるが、本
発明者等はポリ弗化ビニリデソフイルムの片面若しくは
両面にある種の誘電体フィルムを重ね、加熱下で電界を
印加せしめることによりポリ弗化ビニリデンフィルムの
絶縁耐力の改良に始めて成功したものである。
以下、本発明を詳細に説明する。
ポリ弗化ビニリデンフイルムに重ねられるある種の譲露
体フィルムとは、ポリ弗化ビニリデンフィルムよりも導
電率が小さい誘電体フィルムである。
導電率がポリ弗化ビニリデンフィルムのそれよりも同等
若しくは大きいと十分長時間電界を印加しないと絶縁耐
力が改善されず、工業的に好ましくないのである。誘電
体フィルムとしては、例えばポリエチレン、ポリプロピ
レン、アイオノマー、ポリ三弗化塩化エチレン、ポリカ
ーボネ−ト、ポリィミド、ポリメタクリル酸メチル、ポ
リメタクリル酸エチル、ポリメタクリル酸ブチル、ポリ
メタクリル酸オクチル、ポリエチレンテレフタレ‐‐ト
、ポリスチレン、ポリ酢酸ビニル、ポリ塩化ビニル、ェ
ポキシド、ポリアクリロニトリル、ポリオキシメチレン
、ナイロン、ポリ塩化ビニリデン、エチレン−酢酸ビニ
ル共重合体等が挙げられる。この中でも特に好ましく用
いられるのはポリエチレン、ポリプロピレン、ポリカー
ボネート等である。誘電体フィルムの厚丸ま薄い程、ポ
リ発化ビニリデンフィルムにより大きな電界強度が印加
される故好ましいが、１山以下の如きあまりに薄いフィ
ルムの場合には機械的強度が弱くなり扱いにくいばかり
でなく、絶縁耐力の向上効果もかえって小さくなり、最
も好ましいものは２仏以上であり、できるだけ薄いフィ
ルムである。
誘電体フィルムはポリ弗化ビニリデンフィルムの片面若
しくは両面に重ねられるが、両面に重ねた方が絶縁耐力
の向上効果が大であり好ましい。ポリ弗化ビニリデンと
これに重ねた誘電体フィルムは加熱下で電解印加される
ことにより絶縁耐力が向上される。
電界強度は１０ＫＶ／伽以上であり且つ絶縁耐力以下で
あり、好ましくは絶縁耐力に近い値である。又、処理温
度は常温以上であり、且つポリ弗化ビニリデン又は議電
体フィルムのいずれかが熱分解する温度よりも低い温度
であり、好ましくは融点又は軟化点より低い温度が用い
られる。電界を印加する時間ｔ（分）はポリ※化ビニリ
デンフィルムの厚さｄ（ミクロン）に依存し、ｔ≧だ，
好ましくは ｔＺＩＭ とするのが良い。
かかる条件下で得られたポリ弗化ビニリデンフィルムは
絶縁耐力が常温で皿ＭＶ／ｃの以上、１００００で８Ｍ
Ｖ′伽以上となり、従来常温で８ＭＶ／ｃの，１００℃
で８ＭＶ／伽程度に留まっていたものが大きく改善され
ることとなったのである。尚、本発明で云うポリ弗化ビ
ニリデンとは、弗化ビニリデンホモポリマ一は勿論、弗
化ビニリデンを主成分とする共重合体、及びこれらいず
れかを主成分とするポリマーブレンド、或は必要に応じ
種々の添加物を含んだ組成物も含むものである。
又、本発明で云うポリ弗化ビニリデンフィルムは未延伸
フィルムであっても良いし、延伸フィルムであっても良
い。以下、実施例を示す。
実施例 １ ２鞄延伸された厚さ１２仏の弗化ピニリデンホモポリマ
ーフィルムの両側に「片面を金燕着した５ムのポリプロ
ピレンフィルムを重ね、黍着面を電極板と接する様にセ
ットした。
弗化ビニリデンホモポリマーフィルムに５０皿Ｖ／弧の
電界が印加される様に、かかる重ねられたフィルムに１
００午０で３．１ＫＶの電圧を４時間印加した。この結
果印加前の弗化ビニリデンホモポリマ一の絶縁耐力が常
温で８ＭＶ′肌，１００ｑｏで６ＭＶ′肌であったのに
対し、常温で１狐Ｗ／伽，１００００で１０Ｍｙ／肌と
改善された。尚、絶縁耐力はポリ弗化ビニリデンフィル
ムの両面に金蒸着を施して電極とし、黄銅製の球一平板
電極間に挿入し、電圧を５００Ｖ／ｓｅｃで上昇させ絶
縁破壊した最大電圧を測定して求めた試料１０ケの平均
値である。
実施例 ２ 弗化ピニリデン９５重量部と三弗化エチレン５重量部か
らなる厚さ４０仏の共重合体フィルムの両面に、片面を
金蒸着した５仏のポリカーボネートフィルムを重ね、蒸
着面を電極板と接する様にセットして、弗化ビニリデン
共重合体フィルムに５００ＫＶ／弧の電界が印加される
べく１００℃で３６６６Ｖの電圧を１畑時間印加した。

Claims (1)

  1. 【特許請求の範囲】 １ 絶縁耐力が常温で１０ＭＶ／ｃｍ以上、１００℃で
    ８Ｍｖ／ｃｍ以上であることを特徴とする絶縁耐力の優
    れたポリ弗化ビニリデンフイルム。 ２ ポリ弗化ビニリデンフイルムの片面若しくは両面に
    ポリ弗化ビニリデンフイルムよりも導電率が小さい誘電
    体フイルムを重ね、常温以上で且つポリ弗化ビニリデン
    又は該誘電体のいずれかが熱分解する温度よりも低い温
    度に於て、ポリ弗化ビニリデンフイルムに電界強度が１
    ０ＫＶ／ｃｍ以上で絶縁耐力以下となる様にこれらフイ
    ルムに電解を印加することを特徴とする絶縁耐力の優れ
    たポリ弗化ビニリデンフイルムの製造方法。
JP53036588A 1978-03-31 1978-03-31 絶縁耐力の優れたポリ弗化ビニリデンフイルム及びその製造方法 Expired JPS6014774B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP53036588A JPS6014774B2 (ja) 1978-03-31 1978-03-31 絶縁耐力の優れたポリ弗化ビニリデンフイルム及びその製造方法
DE2911856A DE2911856C3 (de) 1978-03-31 1979-03-26 Verfahren zur Erhöhung der Durchschlagsfestigkeit an einem Film aus Polyvinylidenfluorid
US06/024,802 US4407887A (en) 1978-03-31 1979-03-28 Polyvinylidene fluoride film having superior dielectric strength and a process for producing the same
GB7910757A GB2019088B (en) 1978-03-31 1979-03-28 Polyvinylidene fluoride film and a process for producing the same
NL7902451A NL7902451A (nl) 1978-03-31 1979-03-29 Een polyvinylideenfluoride-film met superieure dieelek- trische sterkte en werkwijze ter vervaardiging daarvan.
FR7908119A FR2421191A1 (fr) 1978-03-31 1979-03-30 Film de fluorure de polyvinylidene ayant une rigidite dielectrique superieure et procede pour sa preparation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53036588A JPS6014774B2 (ja) 1978-03-31 1978-03-31 絶縁耐力の優れたポリ弗化ビニリデンフイルム及びその製造方法

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JPS54129064A JPS54129064A (en) 1979-10-06
JPS6014774B2 true JPS6014774B2 (ja) 1985-04-16

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Country Status (6)

Country Link
US (1) US4407887A (ja)
JP (1) JPS6014774B2 (ja)
DE (1) DE2911856C3 (ja)
FR (1) FR2421191A1 (ja)
GB (1) GB2019088B (ja)
NL (1) NL7902451A (ja)

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FR2435348A1 (fr) * 1978-05-11 1980-04-04 Solvay Structure laminee comprenant une couche de polymere fluore
JPS56149711A (en) * 1980-04-22 1981-11-19 Unitika Ltd High dielectric composite film
JPS6048119B2 (ja) * 1980-11-10 1985-10-25 松下電器産業株式会社 高分子圧電フィルムの製造方法
US4677017A (en) * 1983-08-01 1987-06-30 Ausimont, U.S.A., Inc. Coextrusion of thermoplastic fluoropolymers with thermoplastic polymers
GB8422578D0 (en) * 1984-09-07 1984-10-10 Dobson D Sandwich structure laminate
US4759990A (en) * 1985-11-27 1988-07-26 Yen Yung Tsai Composite optical element including anti-reflective coating
US4778867A (en) * 1987-07-21 1988-10-18 Seymour Pries Ferroelectric copolymers of vinylidene fluoride and trifluoroethylene with increased Curie temperature and their methods of production
ES2172443B2 (es) * 2000-12-01 2003-04-16 Univesidad Politecnica De Madr Modulo didactico para docencia e investigacion.
CN104448077B (zh) * 2014-12-06 2017-01-04 常熟丽源膜科技有限公司 聚偏氟乙烯的生产工艺
JP6814820B2 (ja) * 2017-01-25 2021-01-20 株式会社クレハ フッ化ビニリデン系樹脂フィルム
WO2018139262A1 (ja) * 2017-01-25 2018-08-02 株式会社クレハ フッ化ビニリデン系樹脂フィルム

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3931446A (en) * 1970-09-26 1976-01-06 Kureha Kagaku Kogyo Kabushiki Kaisha Process for producing polymeric piezoelectric elements and the article formed thereby
US3912830A (en) * 1971-10-13 1975-10-14 Kureha Chemical Ind Co Ltd Method of producing a piezoelectric or pyroelectric element
US3917895A (en) * 1972-04-19 1975-11-04 Exxon Research Engineering Co Fluorinated polyolefin laminates bonded with an asphalt-atactic polypropylene mixture
US3993842A (en) * 1973-04-24 1976-11-23 E. I. Du Pont De Nemours And Company Electrically conductive elastomeric ink
JPS5311021B2 (ja) * 1973-06-16 1978-04-18
FR2239501B1 (ja) * 1973-07-10 1976-06-18 Solvay
JPS5718641B2 (ja) * 1973-07-17 1982-04-17
JPS5518065B2 (ja) * 1974-12-17 1980-05-16
US4095020A (en) * 1977-02-25 1978-06-13 Xerox Corporation Process for controlled phase transformation of alpha phase of poly(vinylidene fluoride) to the gamma phase
JPS6051279B2 (ja) * 1977-10-19 1985-11-13 呉羽化学工業株式会社 熱可塑性樹脂圧電性焦電性フイルムの成極方法

Also Published As

Publication number Publication date
NL7902451A (nl) 1979-10-02
DE2911856A1 (de) 1979-10-11
GB2019088A (en) 1979-10-24
DE2911856C3 (de) 1981-11-05
US4407887A (en) 1983-10-04
FR2421191A1 (fr) 1979-10-26
JPS54129064A (en) 1979-10-06
DE2911856B2 (de) 1981-03-19
GB2019088B (en) 1982-08-04
FR2421191B1 (ja) 1982-11-19

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