JPS60143659A - 相補形絶縁ゲート電界効果トランジスタ集積回路 - Google Patents

相補形絶縁ゲート電界効果トランジスタ集積回路

Info

Publication number
JPS60143659A
JPS60143659A JP59259138A JP25913884A JPS60143659A JP S60143659 A JPS60143659 A JP S60143659A JP 59259138 A JP59259138 A JP 59259138A JP 25913884 A JP25913884 A JP 25913884A JP S60143659 A JPS60143659 A JP S60143659A
Authority
JP
Japan
Prior art keywords
channel
transistor
drain
well
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59259138A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0213822B2 (enrdf_load_stackoverflow
Inventor
Yoshio Sakai
芳男 酒井
Toshiaki Masuhara
増原　利明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59259138A priority Critical patent/JPS60143659A/ja
Publication of JPS60143659A publication Critical patent/JPS60143659A/ja
Publication of JPH0213822B2 publication Critical patent/JPH0213822B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/859—Complementary IGFETs, e.g. CMOS comprising both N-type and P-type wells, e.g. twin-tub

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP59259138A 1984-12-10 1984-12-10 相補形絶縁ゲート電界効果トランジスタ集積回路 Granted JPS60143659A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59259138A JPS60143659A (ja) 1984-12-10 1984-12-10 相補形絶縁ゲート電界効果トランジスタ集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59259138A JPS60143659A (ja) 1984-12-10 1984-12-10 相補形絶縁ゲート電界効果トランジスタ集積回路

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP9770776A Division JPS5323577A (en) 1976-08-18 1976-08-18 Complementary type insulated gate effect transistor

Publications (2)

Publication Number Publication Date
JPS60143659A true JPS60143659A (ja) 1985-07-29
JPH0213822B2 JPH0213822B2 (enrdf_load_stackoverflow) 1990-04-05

Family

ID=17329851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59259138A Granted JPS60143659A (ja) 1984-12-10 1984-12-10 相補形絶縁ゲート電界効果トランジスタ集積回路

Country Status (1)

Country Link
JP (1) JPS60143659A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0223652A (ja) * 1988-07-13 1990-01-25 Oki Electric Ind Co Ltd 半導体素子の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49130187A (enrdf_load_stackoverflow) * 1973-04-12 1974-12-13

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49130187A (enrdf_load_stackoverflow) * 1973-04-12 1974-12-13

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0223652A (ja) * 1988-07-13 1990-01-25 Oki Electric Ind Co Ltd 半導体素子の製造方法

Also Published As

Publication number Publication date
JPH0213822B2 (enrdf_load_stackoverflow) 1990-04-05

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