JPS60141156U - transistor - Google Patents

transistor

Info

Publication number
JPS60141156U
JPS60141156U JP2812884U JP2812884U JPS60141156U JP S60141156 U JPS60141156 U JP S60141156U JP 2812884 U JP2812884 U JP 2812884U JP 2812884 U JP2812884 U JP 2812884U JP S60141156 U JPS60141156 U JP S60141156U
Authority
JP
Japan
Prior art keywords
base
region
emitter
electrode
contact hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2812884U
Other languages
Japanese (ja)
Inventor
伸一 伊藤
Original Assignee
富士電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 富士電機株式会社 filed Critical 富士電機株式会社
Priority to JP2812884U priority Critical patent/JPS60141156U/en
Publication of JPS60141156U publication Critical patent/JPS60141156U/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来のメツシュエミッタ構造トランジスタの要
部平面図、第２図は第１図のトランジスタの一部分とプ
ローブ針とを示す断面図、第３図は本考案の三つの実施
例を併せて示す要部平面図である。 １・・・ベース領域、２・・・エミッタ領域、３・・・
べ二スボンデイングパツ）一部１，１２，１３−　１４
・・・プローブ針用コンタクトホール。FIG. 1 is a plan view of a main part of a conventional mesh emitter structure transistor, FIG. 2 is a sectional view showing a part of the transistor in FIG. 1 and a probe needle, and FIG. 3 is a combination of three embodiments of the present invention. FIG. 1...Base region, 2...Emitter region, 3...
Benis bonding parts) part 1, 12, 13- 14
...Contact hole for probe needle.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] エミッタ領域およびベース領域のいずれか一方が他方に
囲まれて多数分散配置され、内領域がそれぞれ表面を覆
う絶縁膜に明けられたコンタクトホールを介してエミッ
タ電極あるいはベース電極に接触するものにおいて、ベ
ースポンディングパッド部のエミッタ領域の近い部位の
ベース領域を覆う絶縁膜に、ベース電極のためのコンタ
クトホールより大きい開口部が設けられたことを特徴と
するトランジスタ。In a device in which one of the emitter region and the base region is surrounded by the other and arranged in large numbers, and each inner region contacts the emitter electrode or the base electrode through a contact hole made in an insulating film covering the surface, the base A transistor characterized in that an opening larger than a contact hole for a base electrode is provided in an insulating film covering a base region of a portion of a bonding pad near an emitter region.
JP2812884U 1984-02-28 1984-02-28 transistor Pending JPS60141156U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2812884U JPS60141156U (en) 1984-02-28 1984-02-28 transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2812884U JPS60141156U (en) 1984-02-28 1984-02-28 transistor

Publications (1)

Publication Number Publication Date
JPS60141156U true JPS60141156U (en) 1985-09-18

Family

ID=30525726

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2812884U Pending JPS60141156U (en) 1984-02-28 1984-02-28 transistor

Country Status (1)

Country Link
JP (1) JPS60141156U (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5290275A (en) * 1976-01-23 1977-07-29 Toshiba Corp Production of semiconductor device
JPS5595359A (en) * 1979-01-12 1980-07-19 Mitsubishi Electric Corp High frequency, high output transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5290275A (en) * 1976-01-23 1977-07-29 Toshiba Corp Production of semiconductor device
JPS5595359A (en) * 1979-01-12 1980-07-19 Mitsubishi Electric Corp High frequency, high output transistor

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