JPS60141156U - transistor - Google Patents
transistorInfo
- Publication number
- JPS60141156U JPS60141156U JP2812884U JP2812884U JPS60141156U JP S60141156 U JPS60141156 U JP S60141156U JP 2812884 U JP2812884 U JP 2812884U JP 2812884 U JP2812884 U JP 2812884U JP S60141156 U JPS60141156 U JP S60141156U
- Authority
- JP
- Japan
- Prior art keywords
- base
- region
- emitter
- electrode
- contact hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図は従来のメツシュエミッタ構造トランジスタの要
部平面図、第2図は第1図のトランジスタの一部分とプ
ローブ針とを示す断面図、第3図は本考案の三つの実施
例を併せて示す要部平面図である。
1・・・ベース領域、2・・・エミッタ領域、3・・・
べ二スボンデイングパツ)一部1,12,13− 14
・・・プローブ針用コンタクトホール。FIG. 1 is a plan view of a main part of a conventional mesh emitter structure transistor, FIG. 2 is a sectional view showing a part of the transistor in FIG. 1 and a probe needle, and FIG. 3 is a combination of three embodiments of the present invention. FIG. 1...Base region, 2...Emitter region, 3...
Benis bonding parts) part 1, 12, 13- 14
...Contact hole for probe needle.
Claims (1)
囲まれて多数分散配置され、内領域がそれぞれ表面を覆
う絶縁膜に明けられたコンタクトホールを介してエミッ
タ電極あるいはベース電極に接触するものにおいて、ベ
ースポンディングパッド部のエミッタ領域の近い部位の
ベース領域を覆う絶縁膜に、ベース電極のためのコンタ
クトホールより大きい開口部が設けられたことを特徴と
するトランジスタ。In a device in which one of the emitter region and the base region is surrounded by the other and arranged in large numbers, and each inner region contacts the emitter electrode or the base electrode through a contact hole made in an insulating film covering the surface, the base A transistor characterized in that an opening larger than a contact hole for a base electrode is provided in an insulating film covering a base region of a portion of a bonding pad near an emitter region.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2812884U JPS60141156U (en) | 1984-02-28 | 1984-02-28 | transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2812884U JPS60141156U (en) | 1984-02-28 | 1984-02-28 | transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60141156U true JPS60141156U (en) | 1985-09-18 |
Family
ID=30525726
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2812884U Pending JPS60141156U (en) | 1984-02-28 | 1984-02-28 | transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60141156U (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5290275A (en) * | 1976-01-23 | 1977-07-29 | Toshiba Corp | Production of semiconductor device |
JPS5595359A (en) * | 1979-01-12 | 1980-07-19 | Mitsubishi Electric Corp | High frequency, high output transistor |
-
1984
- 1984-02-28 JP JP2812884U patent/JPS60141156U/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5290275A (en) * | 1976-01-23 | 1977-07-29 | Toshiba Corp | Production of semiconductor device |
JPS5595359A (en) * | 1979-01-12 | 1980-07-19 | Mitsubishi Electric Corp | High frequency, high output transistor |
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