JPS60140765U - plasma deposition equipment - Google Patents
plasma deposition equipmentInfo
- Publication number
- JPS60140765U JPS60140765U JP19382884U JP19382884U JPS60140765U JP S60140765 U JPS60140765 U JP S60140765U JP 19382884 U JP19382884 U JP 19382884U JP 19382884 U JP19382884 U JP 19382884U JP S60140765 U JPS60140765 U JP S60140765U
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- plasma deposition
- deposition equipment
- temperature distribution
- control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来のプラズマ蒸着装置の概略８構造図、第２
図は本考案の一実施例にかかるプラズマ蒸着装置の概略
構成図である。
１・・・・・・基板、２・・・・・・サセプター、３・
・・・・・ヒーターブロック、３Ａ、 ３Ｂ、 ３Ｃ・
・回加熱体、４・・・・・・上部電極、５・・・・・・
孔、６・・・・・・反応室。Figure 1 is a schematic 8 structural diagram of a conventional plasma deposition apparatus;
The figure is a schematic configuration diagram of a plasma deposition apparatus according to an embodiment of the present invention. 1...Substrate, 2...Susceptor, 3.
・・・・・・Heater block, 3A, 3B, 3C・
・Rotary heating body, 4... Upper electrode, 5...
Hole, 6...Reaction chamber.
Claims (1)
プタと平行な関係で対向配置され、サセプタとの対向面
側に多数のガス吹出小孔をもつ中空のガス供給器と、前
記サセプタが載置されるヒーターブロックとを備えると
ともに、同ヒニターブロック内に、同ブロックの温度分
布を中央部そ低く、周辺部で高（制御する２個以上の加
熱体が配設され、前記サセプタの温度分布が均一化され
ていることを特徴とするプラズマ蒸着装置。A susceptor on which a plurality of semiconductor wafers can be placed, a hollow gas supply device that is arranged opposite to the susceptor in a parallel relationship and has a large number of small gas blowing holes on the side facing the susceptor, and the susceptor is placed on the susceptor. In addition, two or more heating elements are arranged in the heater block to control the temperature distribution of the block to be low in the center and high in the periphery, and to control the temperature distribution of the susceptor. A plasma evaporation device characterized by uniformity of the plasma deposition system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19382884U JPS60140765U (en) | 1984-12-20 | 1984-12-20 | plasma deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19382884U JPS60140765U (en) | 1984-12-20 | 1984-12-20 | plasma deposition equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60140765U true JPS60140765U (en) | 1985-09-18 |
Family
ID=30751259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19382884U Pending JPS60140765U (en) | 1984-12-20 | 1984-12-20 | plasma deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60140765U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51135363A (en) * | 1975-05-19 | 1976-11-24 | Matsushita Electric Ind Co Ltd | Method of manufacturing semiconductors and its equipment |
-
1984
- 1984-12-20 JP JP19382884U patent/JPS60140765U/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51135363A (en) * | 1975-05-19 | 1976-11-24 | Matsushita Electric Ind Co Ltd | Method of manufacturing semiconductors and its equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS60140765U (en) | plasma deposition equipment | |
| EP0202877A3 (en) | Integrated circuit device and manufacturing method thereof | |
| JPH0430728U (en) | ||
| JPS596837U (en) | Thin film forming equipment | |
| JP2793821B2 (en) | Plasma processing equipment | |
| JPH0648834Y2 (en) | Plasma CVD equipment | |
| JPH01120328U (en) | ||
| JPS60116235U (en) | semiconductor manufacturing equipment | |
| JPS60118236U (en) | Electrode for plasma etching equipment | |
| JPH0345634U (en) | ||
| JPH0526734Y2 (en) | ||
| JPS6298227U (en) | ||
| JPS59140435U (en) | Vapor phase growth equipment | |
| JPS6223856U (en) | ||
| JPS62180933U (en) | ||
| JPH0279024U (en) | ||
| JPS59141570U (en) | plasma etching equipment | |
| JPS6351436U (en) | ||
| JPS6230328A (en) | Dry etching device | |
| JPS5944040U (en) | Cylinder type epitaxial growth equipment | |
| JPS60174242U (en) | Reactive ion etching equipment | |
| JPS60179033U (en) | discharge electrode | |
| JPS59103770U (en) | Thin film vapor phase growth equipment | |
| JPH01154630U (en) | ||
| JPS61138249U (en) |