JPS60133650U - 感光装置 - Google Patents

感光装置

Info

Publication number
JPS60133650U
JPS60133650U JP1984021106U JP2110684U JPS60133650U JP S60133650 U JPS60133650 U JP S60133650U JP 1984021106 U JP1984021106 U JP 1984021106U JP 2110684 U JP2110684 U JP 2110684U JP S60133650 U JPS60133650 U JP S60133650U
Authority
JP
Japan
Prior art keywords
photosensitive device
amorphous semiconductor
circuit element
photosensitive
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1984021106U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0453003Y2 (enExample
Inventor
勝 武内
中野　昭一
桑野　幸徳
中山　正一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP1984021106U priority Critical patent/JPS60133650U/ja
Publication of JPS60133650U publication Critical patent/JPS60133650U/ja
Application granted granted Critical
Publication of JPH0453003Y2 publication Critical patent/JPH0453003Y2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP1984021106U 1984-02-15 1984-02-15 感光装置 Granted JPS60133650U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1984021106U JPS60133650U (ja) 1984-02-15 1984-02-15 感光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1984021106U JPS60133650U (ja) 1984-02-15 1984-02-15 感光装置

Publications (2)

Publication Number Publication Date
JPS60133650U true JPS60133650U (ja) 1985-09-06
JPH0453003Y2 JPH0453003Y2 (enExample) 1992-12-14

Family

ID=30512201

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1984021106U Granted JPS60133650U (ja) 1984-02-15 1984-02-15 感光装置

Country Status (1)

Country Link
JP (1) JPS60133650U (enExample)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59177964A (ja) * 1983-03-28 1984-10-08 Fujitsu Ltd イメ−ジ・センサ

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59177964A (ja) * 1983-03-28 1984-10-08 Fujitsu Ltd イメ−ジ・センサ

Also Published As

Publication number Publication date
JPH0453003Y2 (enExample) 1992-12-14

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