JPS60131899A - 炭化ケイ素ウイスカ−の製造方法 - Google Patents

炭化ケイ素ウイスカ−の製造方法

Info

Publication number
JPS60131899A
JPS60131899A JP58237698A JP23769883A JPS60131899A JP S60131899 A JPS60131899 A JP S60131899A JP 58237698 A JP58237698 A JP 58237698A JP 23769883 A JP23769883 A JP 23769883A JP S60131899 A JPS60131899 A JP S60131899A
Authority
JP
Japan
Prior art keywords
silicon carbide
reaction
whiskers
carbon
atmosphere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58237698A
Other languages
English (en)
Japanese (ja)
Other versions
JPH03353B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Atsushi Asano
淳 浅野
Tetsuo Kato
加藤　哲郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokai Carbon Co Ltd
Original Assignee
Tokai Carbon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokai Carbon Co Ltd filed Critical Tokai Carbon Co Ltd
Priority to JP58237698A priority Critical patent/JPS60131899A/ja
Publication of JPS60131899A publication Critical patent/JPS60131899A/ja
Publication of JPH03353B2 publication Critical patent/JPH03353B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP58237698A 1983-12-16 1983-12-16 炭化ケイ素ウイスカ−の製造方法 Granted JPS60131899A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58237698A JPS60131899A (ja) 1983-12-16 1983-12-16 炭化ケイ素ウイスカ−の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58237698A JPS60131899A (ja) 1983-12-16 1983-12-16 炭化ケイ素ウイスカ−の製造方法

Publications (2)

Publication Number Publication Date
JPS60131899A true JPS60131899A (ja) 1985-07-13
JPH03353B2 JPH03353B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-01-07

Family

ID=17019180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58237698A Granted JPS60131899A (ja) 1983-12-16 1983-12-16 炭化ケイ素ウイスカ−の製造方法

Country Status (1)

Country Link
JP (1) JPS60131899A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6236100A (ja) * 1985-08-09 1987-02-17 Ube Ind Ltd 炭化珪素ウイスカ−の製造法
CN108002839A (zh) * 2017-12-08 2018-05-08 东华大学 一种ZrC1-x-SiC复相陶瓷的制备方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6236100A (ja) * 1985-08-09 1987-02-17 Ube Ind Ltd 炭化珪素ウイスカ−の製造法
CN108002839A (zh) * 2017-12-08 2018-05-08 东华大学 一种ZrC1-x-SiC复相陶瓷的制备方法

Also Published As

Publication number Publication date
JPH03353B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-01-07

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