JPS6012777B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS6012777B2 JPS6012777B2 JP49022797A JP2279774A JPS6012777B2 JP S6012777 B2 JPS6012777 B2 JP S6012777B2 JP 49022797 A JP49022797 A JP 49022797A JP 2279774 A JP2279774 A JP 2279774A JP S6012777 B2 JPS6012777 B2 JP S6012777B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- low
- temperature oxide
- impurities
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP49022797A JPS6012777B2 (ja) | 1974-02-28 | 1974-02-28 | 半導体装置の製造方法 |
GB8370/75A GB1503017A (en) | 1974-02-28 | 1975-02-28 | Method of manufacturing semiconductor devices |
US05/554,152 US3986896A (en) | 1974-02-28 | 1975-02-28 | Method of manufacturing semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP49022797A JPS6012777B2 (ja) | 1974-02-28 | 1974-02-28 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS50116276A JPS50116276A (id) | 1975-09-11 |
JPS6012777B2 true JPS6012777B2 (ja) | 1985-04-03 |
Family
ID=12092659
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP49022797A Expired JPS6012777B2 (ja) | 1974-02-28 | 1974-02-28 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6012777B2 (id) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4857587A (id) * | 1971-11-18 | 1973-08-13 | ||
JPS4874788A (id) * | 1971-12-29 | 1973-10-08 | ||
JPS497625A (id) * | 1972-05-26 | 1974-01-23 | ||
JPS497626A (id) * | 1972-05-23 | 1974-01-23 |
-
1974
- 1974-02-28 JP JP49022797A patent/JPS6012777B2/ja not_active Expired
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4857587A (id) * | 1971-11-18 | 1973-08-13 | ||
JPS4874788A (id) * | 1971-12-29 | 1973-10-08 | ||
JPS497626A (id) * | 1972-05-23 | 1974-01-23 | ||
JPS497625A (id) * | 1972-05-26 | 1974-01-23 |
Also Published As
Publication number | Publication date |
---|---|
JPS50116276A (id) | 1975-09-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4041518A (en) | MIS semiconductor device and method of manufacturing the same | |
JPS638622B2 (id) | ||
US4287660A (en) | Methods of manufacturing semiconductor devices | |
JPH08213479A (ja) | Misトランジスタおよび半導体装置の製造方法 | |
US4916504A (en) | Three-dimensional CMOS inverter | |
KR900010795A (ko) | 반도체 불휘발성 메모리 및 그 제조방법 | |
JP3128364B2 (ja) | 半導体装置及びその製造方法 | |
JPS5650535A (en) | Manufacture of semiconductor device | |
US5219770A (en) | Method for fabricating a MISFET including a common contact window | |
JPS6012777B2 (ja) | 半導体装置の製造方法 | |
US4011653A (en) | Method for manufacturing a semiconductor integrated circuit including an insulating gate type semiconductor transistor | |
JP2729422B2 (ja) | 半導体装置 | |
JPH0116018B2 (id) | ||
JPH02178965A (ja) | 絶縁分離型電界効果半導体装置 | |
KR950002013A (ko) | 박막 트랜지스터를 포함하는 반도체 장치와 그 제조방법 | |
JPH0831601B2 (ja) | 半導体装置の製造方法 | |
JPS63278273A (ja) | 半導体装置 | |
JPS6126234B2 (id) | ||
JPH04250667A (ja) | 半導体装置及びその製造方法 | |
JP4146374B2 (ja) | 半導体装置の製造方法 | |
KR930008534B1 (ko) | 듀얼게이트 트랜지스터 제조방법 | |
JPS627148A (ja) | 相補型半導体装置及びその製造方法 | |
JP4027452B2 (ja) | 電圧安定化素子の製造方法 | |
JPS6050070B2 (ja) | Mos形半導体装置の製造方法 | |
JPS5927098B2 (ja) | Mos型半導体集積回路の製造方法 |