JPS60121649U - 気密端子 - Google Patents

気密端子

Info

Publication number
JPS60121649U
JPS60121649U JP1984009020U JP902084U JPS60121649U JP S60121649 U JPS60121649 U JP S60121649U JP 1984009020 U JP1984009020 U JP 1984009020U JP 902084 U JP902084 U JP 902084U JP S60121649 U JPS60121649 U JP S60121649U
Authority
JP
Japan
Prior art keywords
airtight terminal
wire
outer ring
metal outer
nido
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1984009020U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0138914Y2 (enExample
Inventor
三ケ月　義信
Original Assignee
関西日本電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 関西日本電気株式会社 filed Critical 関西日本電気株式会社
Priority to JP1984009020U priority Critical patent/JPS60121649U/ja
Publication of JPS60121649U publication Critical patent/JPS60121649U/ja
Application granted granted Critical
Publication of JPH0138914Y2 publication Critical patent/JPH0138914Y2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 

Landscapes

  • Wire Bonding (AREA)
  • Connections Arranged To Contact A Plurality Of Conductors (AREA)
JP1984009020U 1984-01-24 1984-01-24 気密端子 Granted JPS60121649U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1984009020U JPS60121649U (ja) 1984-01-24 1984-01-24 気密端子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1984009020U JPS60121649U (ja) 1984-01-24 1984-01-24 気密端子

Publications (2)

Publication Number Publication Date
JPS60121649U true JPS60121649U (ja) 1985-08-16
JPH0138914Y2 JPH0138914Y2 (enExample) 1989-11-21

Family

ID=30488840

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1984009020U Granted JPS60121649U (ja) 1984-01-24 1984-01-24 気密端子

Country Status (1)

Country Link
JP (1) JPS60121649U (enExample)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48102947U (enExample) * 1972-03-06 1973-12-03
JPS50114975A (enExample) * 1974-02-18 1975-09-09

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48102947U (enExample) * 1972-03-06 1973-12-03
JPS50114975A (enExample) * 1974-02-18 1975-09-09

Also Published As

Publication number Publication date
JPH0138914Y2 (enExample) 1989-11-21

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