JPS60120525A - 反応性イオンエツチング方法 - Google Patents

反応性イオンエツチング方法

Info

Publication number
JPS60120525A
JPS60120525A JP22864583A JP22864583A JPS60120525A JP S60120525 A JPS60120525 A JP S60120525A JP 22864583 A JP22864583 A JP 22864583A JP 22864583 A JP22864583 A JP 22864583A JP S60120525 A JPS60120525 A JP S60120525A
Authority
JP
Japan
Prior art keywords
plasma
gas
sample
reactive
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22864583A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0458176B2 (en, 2012
Inventor
Seitaro Matsuo
松尾　誠太郎
Toshiro Ono
俊郎 小野
Masatoshi Oda
政利 小田
Toshitaka Shibata
柴田　俊隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP22864583A priority Critical patent/JPS60120525A/ja
Publication of JPS60120525A publication Critical patent/JPS60120525A/ja
Publication of JPH0458176B2 publication Critical patent/JPH0458176B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP22864583A 1983-12-02 1983-12-02 反応性イオンエツチング方法 Granted JPS60120525A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22864583A JPS60120525A (ja) 1983-12-02 1983-12-02 反応性イオンエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22864583A JPS60120525A (ja) 1983-12-02 1983-12-02 反応性イオンエツチング方法

Publications (2)

Publication Number Publication Date
JPS60120525A true JPS60120525A (ja) 1985-06-28
JPH0458176B2 JPH0458176B2 (en, 2012) 1992-09-16

Family

ID=16879581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22864583A Granted JPS60120525A (ja) 1983-12-02 1983-12-02 反応性イオンエツチング方法

Country Status (1)

Country Link
JP (1) JPS60120525A (en, 2012)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4734158A (en) * 1987-03-16 1988-03-29 Hughes Aircraft Company Molecular beam etching system and method
JPH0328365A (ja) * 1989-03-20 1991-02-06 Hitachi Ltd 金属／有機高分子合成樹脂複合体及びその製造方法
US5003152A (en) * 1987-04-27 1991-03-26 Nippon Telegraph And Telephone Corporation Microwave transforming method and plasma processing
US5024716A (en) * 1988-01-20 1991-06-18 Canon Kabushiki Kaisha Plasma processing apparatus for etching, ashing and film-formation
JPH077003A (ja) * 1994-01-31 1995-01-10 Semiconductor Energy Lab Co Ltd 処理方法
US5468341A (en) * 1993-12-28 1995-11-21 Nec Corporation Plasma-etching method and apparatus therefor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5193280A (en, 2012) * 1975-02-14 1976-08-16
JPS56155535A (en) * 1980-05-02 1981-12-01 Nippon Telegr & Teleph Corp <Ntt> Film forming device utilizing plasma

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5193280A (en, 2012) * 1975-02-14 1976-08-16
JPS56155535A (en) * 1980-05-02 1981-12-01 Nippon Telegr & Teleph Corp <Ntt> Film forming device utilizing plasma

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4734158A (en) * 1987-03-16 1988-03-29 Hughes Aircraft Company Molecular beam etching system and method
US5003152A (en) * 1987-04-27 1991-03-26 Nippon Telegraph And Telephone Corporation Microwave transforming method and plasma processing
US5024716A (en) * 1988-01-20 1991-06-18 Canon Kabushiki Kaisha Plasma processing apparatus for etching, ashing and film-formation
US5034086A (en) * 1988-01-20 1991-07-23 Canon Kabushiki Kaisha Plasma processing apparatus for etching, ashing and film-formation
JPH0328365A (ja) * 1989-03-20 1991-02-06 Hitachi Ltd 金属／有機高分子合成樹脂複合体及びその製造方法
US5468341A (en) * 1993-12-28 1995-11-21 Nec Corporation Plasma-etching method and apparatus therefor
JPH077003A (ja) * 1994-01-31 1995-01-10 Semiconductor Energy Lab Co Ltd 処理方法

Also Published As

Publication number Publication date
JPH0458176B2 (en, 2012) 1992-09-16

Similar Documents

Publication Publication Date Title
JP2918892B2 (ja) プラズマエッチング処理方法
US5593539A (en) Plasma source for etching
US4253907A (en) Anisotropic plasma etching
JP3215151B2 (ja) ドライエッチング方法
JPH05247673A (ja) 酸化物部分および窒化物部分を含む被処理体のエッチング方法
JPS60120525A (ja) 反応性イオンエツチング方法
JP2851765B2 (ja) プラズマ発生方法およびその装置
JP4142492B2 (ja) プラズマ処理方法
JP3172340B2 (ja) プラズマ処理装置
JP4360065B2 (ja) プラズマ処理方法
JPH03109728A (ja) 半導体装置の製造方法
JPH0590217A (ja) ドライエツチング方法
JP2917993B1 (ja) ドライエッチング方法
JP3516741B2 (ja) プラズマ処理方法
JPH05144773A (ja) プラズマエツチング装置
JPS63124420A (ja) ドライエツチング方法
JPH1098021A (ja) 半導体装置の製造方法
JP4436463B2 (ja) ３つの独立制御電極を具備したエッチングチャンバ装置
JPH05315291A (ja) プラズマ処理装置およびプラズマ処理方法
JPS62249420A (ja) プラズマ処理装置
JPH04317324A (ja) プラズマ発生方法およびプラズマ発生装置
JPH03267387A (ja) エッチング方法
JP3267254B2 (ja) ドライエッチング方法
JP3176312B2 (ja) アルミ合金膜のドライエッチング方法
JPH0220021A (ja) 半導体装置の制造方法