JPH0458176B2 - - Google Patents

Info

Publication number
JPH0458176B2
JPH0458176B2 JP58228645A JP22864583A JPH0458176B2 JP H0458176 B2 JPH0458176 B2 JP H0458176B2 JP 58228645 A JP58228645 A JP 58228645A JP 22864583 A JP22864583 A JP 22864583A JP H0458176 B2 JPH0458176 B2 JP H0458176B2
Authority
JP
Japan
Prior art keywords
plasma
gas
etching
sample
generation chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58228645A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60120525A (ja
Inventor
Seitaro Matsuo
Toshiro Ono
Masatoshi Oda
Toshitaka Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP22864583A priority Critical patent/JPS60120525A/ja
Publication of JPS60120525A publication Critical patent/JPS60120525A/ja
Publication of JPH0458176B2 publication Critical patent/JPH0458176B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP22864583A 1983-12-02 1983-12-02 反応性イオンエツチング方法 Granted JPS60120525A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22864583A JPS60120525A (ja) 1983-12-02 1983-12-02 反応性イオンエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22864583A JPS60120525A (ja) 1983-12-02 1983-12-02 反応性イオンエツチング方法

Publications (2)

Publication Number Publication Date
JPS60120525A JPS60120525A (ja) 1985-06-28
JPH0458176B2 true JPH0458176B2 (en, 2012) 1992-09-16

Family

ID=16879581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22864583A Granted JPS60120525A (ja) 1983-12-02 1983-12-02 反応性イオンエツチング方法

Country Status (1)

Country Link
JP (1) JPS60120525A (en, 2012)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4734158A (en) * 1987-03-16 1988-03-29 Hughes Aircraft Company Molecular beam etching system and method
JPH0754759B2 (ja) * 1987-04-27 1995-06-07 日本電信電話株式会社 プラズマ処理方法および装置並びにプラズマ処理装置用モード変換器
US5024716A (en) * 1988-01-20 1991-06-18 Canon Kabushiki Kaisha Plasma processing apparatus for etching, ashing and film-formation
JP2664265B2 (ja) * 1989-03-20 1997-10-15 株式会社日立製作所 金属／有機高分子合成樹脂複合体及びその製造方法
US5468341A (en) * 1993-12-28 1995-11-21 Nec Corporation Plasma-etching method and apparatus therefor
JP2700297B2 (ja) * 1994-01-31 1998-01-19 株式会社半導体エネルギー研究所 処理方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5193280A (en, 2012) * 1975-02-14 1976-08-16
JPS56155535A (en) * 1980-05-02 1981-12-01 Nippon Telegr & Teleph Corp <Ntt> Film forming device utilizing plasma

Also Published As

Publication number Publication date
JPS60120525A (ja) 1985-06-28

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