JPS60112694A - 化合物半導体の気相成長方法 - Google Patents

化合物半導体の気相成長方法

Info

Publication number
JPS60112694A
JPS60112694A JP21892983A JP21892983A JPS60112694A JP S60112694 A JPS60112694 A JP S60112694A JP 21892983 A JP21892983 A JP 21892983A JP 21892983 A JP21892983 A JP 21892983A JP S60112694 A JPS60112694 A JP S60112694A
Authority
JP
Japan
Prior art keywords
gas
furnace
vapor phase
reaction gas
phase growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21892983A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0355433B2 (enrdf_load_stackoverflow
Inventor
Mototsugu Ogura
基次 小倉
Yuzaburo Ban
雄三郎 伴
Nobuyasu Hase
長谷　亘康
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP21892983A priority Critical patent/JPS60112694A/ja
Publication of JPS60112694A publication Critical patent/JPS60112694A/ja
Publication of JPH0355433B2 publication Critical patent/JPH0355433B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP21892983A 1983-11-21 1983-11-21 化合物半導体の気相成長方法 Granted JPS60112694A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21892983A JPS60112694A (ja) 1983-11-21 1983-11-21 化合物半導体の気相成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21892983A JPS60112694A (ja) 1983-11-21 1983-11-21 化合物半導体の気相成長方法

Publications (2)

Publication Number Publication Date
JPS60112694A true JPS60112694A (ja) 1985-06-19
JPH0355433B2 JPH0355433B2 (enrdf_load_stackoverflow) 1991-08-23

Family

ID=16727527

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21892983A Granted JPS60112694A (ja) 1983-11-21 1983-11-21 化合物半導体の気相成長方法

Country Status (1)

Country Link
JP (1) JPS60112694A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6135514A (ja) * 1984-07-28 1986-02-20 Sony Corp 半導体発光装置の製造方法とこれに用いる気相成長装置
JPS6358821A (ja) * 1986-08-29 1988-03-14 Sony Corp 気相成長方法
WO1990011391A1 (fr) * 1989-03-17 1990-10-04 Sumitomo Electric Industries, Ltd. Plaquette en semi-conducteur composite
JPH02291111A (ja) * 1989-04-29 1990-11-30 Toyoda Gosei Co Ltd 化合物半導体の気相成長装置
US5212394A (en) * 1989-03-17 1993-05-18 Sumitomo Electric Industries, Ltd. Compound semiconductor wafer with defects propagating prevention means
WO2001080291A1 (en) * 2000-04-17 2001-10-25 Mezey James J Sr Methods and apparatus for thermally processing wafers
US6332927B1 (en) 1996-06-24 2001-12-25 Kokusai Electric Co., Ltd. Substrate processing apparatus
JP2011513971A (ja) * 2008-02-27 2011-04-28 エス． オー． アイ． テック シリコン オン インシュレーター テクノロジーズ Ｃｖｄリアクタにおける気体状前駆体の熱化

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6135514A (ja) * 1984-07-28 1986-02-20 Sony Corp 半導体発光装置の製造方法とこれに用いる気相成長装置
JPS6358821A (ja) * 1986-08-29 1988-03-14 Sony Corp 気相成長方法
WO1990011391A1 (fr) * 1989-03-17 1990-10-04 Sumitomo Electric Industries, Ltd. Plaquette en semi-conducteur composite
US5212394A (en) * 1989-03-17 1993-05-18 Sumitomo Electric Industries, Ltd. Compound semiconductor wafer with defects propagating prevention means
JPH02291111A (ja) * 1989-04-29 1990-11-30 Toyoda Gosei Co Ltd 化合物半導体の気相成長装置
US6332927B1 (en) 1996-06-24 2001-12-25 Kokusai Electric Co., Ltd. Substrate processing apparatus
WO2001080291A1 (en) * 2000-04-17 2001-10-25 Mezey James J Sr Methods and apparatus for thermally processing wafers
US6774060B2 (en) 2000-04-17 2004-08-10 Avansys, Llc. Methods and apparatus for thermally processing wafers
JP2011513971A (ja) * 2008-02-27 2011-04-28 エス． オー． アイ． テック シリコン オン インシュレーター テクノロジーズ Ｃｖｄリアクタにおける気体状前駆体の熱化

Also Published As

Publication number Publication date
JPH0355433B2 (enrdf_load_stackoverflow) 1991-08-23

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