JPS60112691A - 分子線エピタキシャル成長装置用の基板保持装置 - Google Patents

分子線エピタキシャル成長装置用の基板保持装置

Info

Publication number
JPS60112691A
JPS60112691A JP21716883A JP21716883A JPS60112691A JP S60112691 A JPS60112691 A JP S60112691A JP 21716883 A JP21716883 A JP 21716883A JP 21716883 A JP21716883 A JP 21716883A JP S60112691 A JPS60112691 A JP S60112691A
Authority
JP
Japan
Prior art keywords
substrate
heating
ring
molecular beam
epitaxial growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21716883A
Other languages
English (en)
Japanese (ja)
Other versions
JPS636520B2 (cg-RX-API-DMAC10.html
Inventor
Shunichi Murakami
俊一 村上
Tetsuo Ishida
哲夫 石田
Sumio Sakai
酒井　純朗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Canon Anelva Corp
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp, Anelva Corp filed Critical Canon Anelva Corp
Priority to JP21716883A priority Critical patent/JPS60112691A/ja
Publication of JPS60112691A publication Critical patent/JPS60112691A/ja
Publication of JPS636520B2 publication Critical patent/JPS636520B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP21716883A 1983-11-18 1983-11-18 分子線エピタキシャル成長装置用の基板保持装置 Granted JPS60112691A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21716883A JPS60112691A (ja) 1983-11-18 1983-11-18 分子線エピタキシャル成長装置用の基板保持装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21716883A JPS60112691A (ja) 1983-11-18 1983-11-18 分子線エピタキシャル成長装置用の基板保持装置

Publications (2)

Publication Number Publication Date
JPS60112691A true JPS60112691A (ja) 1985-06-19
JPS636520B2 JPS636520B2 (cg-RX-API-DMAC10.html) 1988-02-10

Family

ID=16699920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21716883A Granted JPS60112691A (ja) 1983-11-18 1983-11-18 分子線エピタキシャル成長装置用の基板保持装置

Country Status (1)

Country Link
JP (1) JPS60112691A (cg-RX-API-DMAC10.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61195042U (cg-RX-API-DMAC10.html) * 1985-05-25 1986-12-04
JPS6244433U (cg-RX-API-DMAC10.html) * 1985-09-06 1987-03-17
US4777022A (en) * 1984-08-28 1988-10-11 Stephen I. Boldish Epitaxial heater apparatus and process

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4311051B2 (ja) * 2003-03-19 2009-08-12 東レ株式会社 中空糸膜モジュールの製造方法およびそれに用いる中空糸膜モジュールの製造装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5730320A (en) * 1980-07-29 1982-02-18 Fujitsu Ltd Substrate holder for molecular beam epitaxy

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5730320A (en) * 1980-07-29 1982-02-18 Fujitsu Ltd Substrate holder for molecular beam epitaxy

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4777022A (en) * 1984-08-28 1988-10-11 Stephen I. Boldish Epitaxial heater apparatus and process
JPS61195042U (cg-RX-API-DMAC10.html) * 1985-05-25 1986-12-04
JPS6244433U (cg-RX-API-DMAC10.html) * 1985-09-06 1987-03-17

Also Published As

Publication number Publication date
JPS636520B2 (cg-RX-API-DMAC10.html) 1988-02-10

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