JPS5730320A - Substrate holder for molecular beam epitaxy - Google Patents

Substrate holder for molecular beam epitaxy

Info

Publication number
JPS5730320A
JPS5730320A JP10414680A JP10414680A JPS5730320A JP S5730320 A JPS5730320 A JP S5730320A JP 10414680 A JP10414680 A JP 10414680A JP 10414680 A JP10414680 A JP 10414680A JP S5730320 A JPS5730320 A JP S5730320A
Authority
JP
Japan
Prior art keywords
substrate
substrate holder
heating plate
heater
molecular beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10414680A
Other languages
Japanese (ja)
Inventor
Junji Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10414680A priority Critical patent/JPS5730320A/en
Publication of JPS5730320A publication Critical patent/JPS5730320A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To prevent fluctuation of temperature distribution on the surface of a substrate by a method wherein the substrate is held with a substrate holder, a heating plate is arranged facing to the substrate interposing space between them, and a heater is provided at the neighborhood of the heating plate. CONSTITUTION:A circular protruding part 12 to support the substrate is provided at the front part of the substrate holder 11 consisted of a tantalum plate processed to form a frame type, the semiconductor substrate 13 is made to come in contact with the protruding part, and is fixed with holding plates 14 and clamping screws 15. The heating plate 16 is arranged at the center part of the substrate holder facing to the substrate at intervals of 5mm.. The heater 17 is provided on the back side of the heating plate 16. Accordingly, attachment and detachment of the substrate to the substrate holder is facilitated, and no fluctuation of temperature distribution on the surface of the substrate is generated and is unified.
JP10414680A 1980-07-29 1980-07-29 Substrate holder for molecular beam epitaxy Pending JPS5730320A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10414680A JPS5730320A (en) 1980-07-29 1980-07-29 Substrate holder for molecular beam epitaxy

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10414680A JPS5730320A (en) 1980-07-29 1980-07-29 Substrate holder for molecular beam epitaxy

Publications (1)

Publication Number Publication Date
JPS5730320A true JPS5730320A (en) 1982-02-18

Family

ID=14372940

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10414680A Pending JPS5730320A (en) 1980-07-29 1980-07-29 Substrate holder for molecular beam epitaxy

Country Status (1)

Country Link
JP (1) JPS5730320A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6081820A (en) * 1983-10-11 1985-05-09 Rohm Co Ltd Wafer mounting device for molecular beam epitaxial equipment
JPS60112691A (en) * 1983-11-18 1985-06-19 Anelva Corp Substrate supporting device for molecular beam epitaxial growth device
JPS60165713A (en) * 1984-02-08 1985-08-28 Rohm Co Ltd Wafer loading constitution of molecular beam epitaxial apparatus
JPS60180998A (en) * 1984-02-27 1985-09-14 Anelva Corp Substrate holder for molecular beam epitaxial growth device
JPS61195042U (en) * 1985-05-25 1986-12-04
JPS6235514A (en) * 1985-08-08 1987-02-16 Fujitsu Ltd Molecular beam crystal growth method
EP0227228A2 (en) * 1985-12-19 1987-07-01 Litton Systems, Inc. Substrate holder for wafers during MBE growth
JPS6323331A (en) * 1986-10-21 1988-01-30 Tokyo Ohka Kogyo Co Ltd Opening and closing mechanism for lid
JPS63176392A (en) * 1987-01-14 1988-07-20 Fujitsu Ltd Molecular beam crystal growth apparatus
JPS63242993A (en) * 1987-03-30 1988-10-07 Agency Of Ind Science & Technol Method for growing crystal by molecular beam
JPH0391993A (en) * 1989-09-04 1991-04-17 Fujitsu Ltd Measuring method for inner layer deviation of multilayer printed wiring board
JPH07161801A (en) * 1993-12-02 1995-06-23 Nippon Telegr & Teleph Corp <Ntt> Substrate holder
JP2007285398A (en) * 2006-04-17 2007-11-01 Takano Co Ltd Member installing structure and installing method

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0136978B2 (en) * 1983-10-11 1989-08-03 Rohm Kk
JPS6081820A (en) * 1983-10-11 1985-05-09 Rohm Co Ltd Wafer mounting device for molecular beam epitaxial equipment
JPS60112691A (en) * 1983-11-18 1985-06-19 Anelva Corp Substrate supporting device for molecular beam epitaxial growth device
JPS636520B2 (en) * 1983-11-18 1988-02-10 Nichiden Anelva Kk
JPS60165713A (en) * 1984-02-08 1985-08-28 Rohm Co Ltd Wafer loading constitution of molecular beam epitaxial apparatus
JPH0237691B2 (en) * 1984-02-08 1990-08-27 Rohm Kk
JPH042552B2 (en) * 1984-02-27 1992-01-20
JPS60180998A (en) * 1984-02-27 1985-09-14 Anelva Corp Substrate holder for molecular beam epitaxial growth device
JPS61195042U (en) * 1985-05-25 1986-12-04
JPS6235514A (en) * 1985-08-08 1987-02-16 Fujitsu Ltd Molecular beam crystal growth method
JPH0319693B2 (en) * 1985-08-08 1991-03-15 Fujitsu Ltd
EP0227228A2 (en) * 1985-12-19 1987-07-01 Litton Systems, Inc. Substrate holder for wafers during MBE growth
JPS6323653B2 (en) * 1986-10-21 1988-05-17 Tokyo Ohka Kogyo Co Ltd
JPS6323331A (en) * 1986-10-21 1988-01-30 Tokyo Ohka Kogyo Co Ltd Opening and closing mechanism for lid
JPS63176392A (en) * 1987-01-14 1988-07-20 Fujitsu Ltd Molecular beam crystal growth apparatus
JPH042554B2 (en) * 1987-03-30 1992-01-20
JPS63242993A (en) * 1987-03-30 1988-10-07 Agency Of Ind Science & Technol Method for growing crystal by molecular beam
JPH0391993A (en) * 1989-09-04 1991-04-17 Fujitsu Ltd Measuring method for inner layer deviation of multilayer printed wiring board
JPH07161801A (en) * 1993-12-02 1995-06-23 Nippon Telegr & Teleph Corp <Ntt> Substrate holder
JP2007285398A (en) * 2006-04-17 2007-11-01 Takano Co Ltd Member installing structure and installing method

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