JPS5730320A - Substrate holder for molecular beam epitaxy - Google Patents
Substrate holder for molecular beam epitaxyInfo
- Publication number
- JPS5730320A JPS5730320A JP10414680A JP10414680A JPS5730320A JP S5730320 A JPS5730320 A JP S5730320A JP 10414680 A JP10414680 A JP 10414680A JP 10414680 A JP10414680 A JP 10414680A JP S5730320 A JPS5730320 A JP S5730320A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- substrate holder
- heating plate
- heater
- molecular beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
PURPOSE:To prevent fluctuation of temperature distribution on the surface of a substrate by a method wherein the substrate is held with a substrate holder, a heating plate is arranged facing to the substrate interposing space between them, and a heater is provided at the neighborhood of the heating plate. CONSTITUTION:A circular protruding part 12 to support the substrate is provided at the front part of the substrate holder 11 consisted of a tantalum plate processed to form a frame type, the semiconductor substrate 13 is made to come in contact with the protruding part, and is fixed with holding plates 14 and clamping screws 15. The heating plate 16 is arranged at the center part of the substrate holder facing to the substrate at intervals of 5mm.. The heater 17 is provided on the back side of the heating plate 16. Accordingly, attachment and detachment of the substrate to the substrate holder is facilitated, and no fluctuation of temperature distribution on the surface of the substrate is generated and is unified.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10414680A JPS5730320A (en) | 1980-07-29 | 1980-07-29 | Substrate holder for molecular beam epitaxy |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10414680A JPS5730320A (en) | 1980-07-29 | 1980-07-29 | Substrate holder for molecular beam epitaxy |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5730320A true JPS5730320A (en) | 1982-02-18 |
Family
ID=14372940
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10414680A Pending JPS5730320A (en) | 1980-07-29 | 1980-07-29 | Substrate holder for molecular beam epitaxy |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5730320A (en) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6081820A (en) * | 1983-10-11 | 1985-05-09 | Rohm Co Ltd | Wafer mounting device for molecular beam epitaxial equipment |
JPS60112691A (en) * | 1983-11-18 | 1985-06-19 | Anelva Corp | Substrate supporting device for molecular beam epitaxial growth device |
JPS60165713A (en) * | 1984-02-08 | 1985-08-28 | Rohm Co Ltd | Wafer loading constitution of molecular beam epitaxial apparatus |
JPS60180998A (en) * | 1984-02-27 | 1985-09-14 | Anelva Corp | Substrate holder for molecular beam epitaxial growth device |
JPS61195042U (en) * | 1985-05-25 | 1986-12-04 | ||
JPS6235514A (en) * | 1985-08-08 | 1987-02-16 | Fujitsu Ltd | Molecular beam crystal growth method |
EP0227228A2 (en) * | 1985-12-19 | 1987-07-01 | Litton Systems, Inc. | Substrate holder for wafers during MBE growth |
JPS6323331A (en) * | 1986-10-21 | 1988-01-30 | Tokyo Ohka Kogyo Co Ltd | Opening and closing mechanism for lid |
JPS63176392A (en) * | 1987-01-14 | 1988-07-20 | Fujitsu Ltd | Molecular beam crystal growth apparatus |
JPS63242993A (en) * | 1987-03-30 | 1988-10-07 | Agency Of Ind Science & Technol | Method for growing crystal by molecular beam |
JPH0391993A (en) * | 1989-09-04 | 1991-04-17 | Fujitsu Ltd | Measuring method for inner layer deviation of multilayer printed wiring board |
JPH07161801A (en) * | 1993-12-02 | 1995-06-23 | Nippon Telegr & Teleph Corp <Ntt> | Substrate holder |
JP2007285398A (en) * | 2006-04-17 | 2007-11-01 | Takano Co Ltd | Member installing structure and installing method |
-
1980
- 1980-07-29 JP JP10414680A patent/JPS5730320A/en active Pending
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0136978B2 (en) * | 1983-10-11 | 1989-08-03 | Rohm Kk | |
JPS6081820A (en) * | 1983-10-11 | 1985-05-09 | Rohm Co Ltd | Wafer mounting device for molecular beam epitaxial equipment |
JPS60112691A (en) * | 1983-11-18 | 1985-06-19 | Anelva Corp | Substrate supporting device for molecular beam epitaxial growth device |
JPS636520B2 (en) * | 1983-11-18 | 1988-02-10 | Nichiden Anelva Kk | |
JPS60165713A (en) * | 1984-02-08 | 1985-08-28 | Rohm Co Ltd | Wafer loading constitution of molecular beam epitaxial apparatus |
JPH0237691B2 (en) * | 1984-02-08 | 1990-08-27 | Rohm Kk | |
JPH042552B2 (en) * | 1984-02-27 | 1992-01-20 | ||
JPS60180998A (en) * | 1984-02-27 | 1985-09-14 | Anelva Corp | Substrate holder for molecular beam epitaxial growth device |
JPS61195042U (en) * | 1985-05-25 | 1986-12-04 | ||
JPS6235514A (en) * | 1985-08-08 | 1987-02-16 | Fujitsu Ltd | Molecular beam crystal growth method |
JPH0319693B2 (en) * | 1985-08-08 | 1991-03-15 | Fujitsu Ltd | |
EP0227228A2 (en) * | 1985-12-19 | 1987-07-01 | Litton Systems, Inc. | Substrate holder for wafers during MBE growth |
JPS6323653B2 (en) * | 1986-10-21 | 1988-05-17 | Tokyo Ohka Kogyo Co Ltd | |
JPS6323331A (en) * | 1986-10-21 | 1988-01-30 | Tokyo Ohka Kogyo Co Ltd | Opening and closing mechanism for lid |
JPS63176392A (en) * | 1987-01-14 | 1988-07-20 | Fujitsu Ltd | Molecular beam crystal growth apparatus |
JPH042554B2 (en) * | 1987-03-30 | 1992-01-20 | ||
JPS63242993A (en) * | 1987-03-30 | 1988-10-07 | Agency Of Ind Science & Technol | Method for growing crystal by molecular beam |
JPH0391993A (en) * | 1989-09-04 | 1991-04-17 | Fujitsu Ltd | Measuring method for inner layer deviation of multilayer printed wiring board |
JPH07161801A (en) * | 1993-12-02 | 1995-06-23 | Nippon Telegr & Teleph Corp <Ntt> | Substrate holder |
JP2007285398A (en) * | 2006-04-17 | 2007-11-01 | Takano Co Ltd | Member installing structure and installing method |
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