JPS60108394A - 単結晶層製造方法 - Google Patents

単結晶層製造方法

Info

Publication number
JPS60108394A
JPS60108394A JP58212439A JP21243983A JPS60108394A JP S60108394 A JPS60108394 A JP S60108394A JP 58212439 A JP58212439 A JP 58212439A JP 21243983 A JP21243983 A JP 21243983A JP S60108394 A JPS60108394 A JP S60108394A
Authority
JP
Japan
Prior art keywords
semiconductor
layer
layers
single crystal
thin layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58212439A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6339553B2 (enExample
Inventor
Toshimasa Ishida
俊正 石田
Nagayasu Yamagishi
山岸　長保
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58212439A priority Critical patent/JPS60108394A/ja
Publication of JPS60108394A publication Critical patent/JPS60108394A/ja
Publication of JPS6339553B2 publication Critical patent/JPS6339553B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP58212439A 1983-11-14 1983-11-14 単結晶層製造方法 Granted JPS60108394A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58212439A JPS60108394A (ja) 1983-11-14 1983-11-14 単結晶層製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58212439A JPS60108394A (ja) 1983-11-14 1983-11-14 単結晶層製造方法

Publications (2)

Publication Number Publication Date
JPS60108394A true JPS60108394A (ja) 1985-06-13
JPS6339553B2 JPS6339553B2 (enExample) 1988-08-05

Family

ID=16622621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58212439A Granted JPS60108394A (ja) 1983-11-14 1983-11-14 単結晶層製造方法

Country Status (1)

Country Link
JP (1) JPS60108394A (enExample)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS541613A (en) * 1977-06-06 1979-01-08 Fuji Photo Film Co Ltd Electromagnetic radiation sensitive recording material

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS541613A (en) * 1977-06-06 1979-01-08 Fuji Photo Film Co Ltd Electromagnetic radiation sensitive recording material

Also Published As

Publication number Publication date
JPS6339553B2 (enExample) 1988-08-05

Similar Documents

Publication Publication Date Title
EP0071471B1 (en) Method of forming a single-crystal semiconductor film on an amorphous insulator
EP0127323A1 (en) A process for producing a single crystal semiconductor island on an insulator
JPS62206816A (ja) 半導体結晶層の製造方法
US4576676A (en) Thick crystalline films on foreign substrates
JPH0454964B2 (enExample)
JPS6339553B2 (enExample)
Scharff et al. Growth of monocrystalline silicon islands on insulating substrates
JPS5983993A (ja) 単結晶半導体層の成長方法
JPS6339554B2 (enExample)
JPH0799734B2 (ja) 単結晶成長方法
JPH01230221A (ja) 非単結晶半導体層の単結晶化方法
JPS60136306A (ja) 半導体基板の製造方法
JPS63142810A (ja) 半導体装置の製造方法
JPH02211617A (ja) 半導体装置の製造方法
JPH0722120B2 (ja) 半導体装置の製造方法
JPH0727860B2 (ja) 半導体単結晶薄膜の製造方法
JPS60191090A (ja) 半導体装置の製造方法
JPH0777196B2 (ja) 単結晶シリコン膜の形成方法
JPS60106124A (ja) 絶縁基板上への半導体薄膜形成方法
JPS5919311A (ja) 半導体装置の製造方法
JPS636828A (ja) 単結晶半導体薄膜の製造方法
JPS59119822A (ja) 半導体装置の製造方法
JPH0449250B2 (enExample)
JPS61136219A (ja) 単結晶シリコン膜の形成方法
JPH03145716A (ja) 半導体薄膜の製造方法