JPS60106163A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS60106163A
JPS60106163A JP58214494A JP21449483A JPS60106163A JP S60106163 A JPS60106163 A JP S60106163A JP 58214494 A JP58214494 A JP 58214494A JP 21449483 A JP21449483 A JP 21449483A JP S60106163 A JPS60106163 A JP S60106163A
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
electrode
films
cell capacities
patterning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58214494A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0363828B2 (enExample
Inventor
Yasuji Ema
泰示 江間
Yuji Furumura
雄二 古村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58214494A priority Critical patent/JPS60106163A/ja
Publication of JPS60106163A publication Critical patent/JPS60106163A/ja
Publication of JPH0363828B2 publication Critical patent/JPH0363828B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP58214494A 1983-11-15 1983-11-15 半導体装置の製造方法 Granted JPS60106163A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58214494A JPS60106163A (ja) 1983-11-15 1983-11-15 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58214494A JPS60106163A (ja) 1983-11-15 1983-11-15 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60106163A true JPS60106163A (ja) 1985-06-11
JPH0363828B2 JPH0363828B2 (enExample) 1991-10-02

Family

ID=16656632

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58214494A Granted JPS60106163A (ja) 1983-11-15 1983-11-15 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60106163A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5336922A (en) * 1990-07-31 1994-08-09 Nec Corporation Device comprising lower and upper silicon layers as capacitor electrodes and method of manufacturing such devices
US5604382A (en) * 1993-11-25 1997-02-18 Nec Corporation Semiconductor device with pillar-shaped contact layer
EP0764974A1 (en) * 1990-03-08 1997-03-26 Fujitsu Limited Layer structure having contact hole and method of producing the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0764974A1 (en) * 1990-03-08 1997-03-26 Fujitsu Limited Layer structure having contact hole and method of producing the same
US5705420A (en) * 1990-03-08 1998-01-06 Fujitsu Limited Method of producing a fin-shaped capacitor
US6144058A (en) * 1990-03-08 2000-11-07 Fujitsu Limited Layer structure having contact hole, method of producing the same, fin-shaped capacitor using the layer structure, method of producing the fin-shaped capacitor and dynamic random access memory having the fin-shaped capacitor
US6528369B1 (en) 1990-03-08 2003-03-04 Fujitsu Limited Layer structure having contact hole and method of producing same
US5336922A (en) * 1990-07-31 1994-08-09 Nec Corporation Device comprising lower and upper silicon layers as capacitor electrodes and method of manufacturing such devices
US5411912A (en) * 1990-07-31 1995-05-02 Nec Corporation Method of making a semiconductor device comprising lower and upper silicon layers as capacitor electrodes
US5604382A (en) * 1993-11-25 1997-02-18 Nec Corporation Semiconductor device with pillar-shaped contact layer

Also Published As

Publication number Publication date
JPH0363828B2 (enExample) 1991-10-02

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees