JPS60103099A - ダイヤモンド膜の製造方法 - Google Patents

ダイヤモンド膜の製造方法

Info

Publication number
JPS60103099A
JPS60103099A JP58208006A JP20800683A JPS60103099A JP S60103099 A JPS60103099 A JP S60103099A JP 58208006 A JP58208006 A JP 58208006A JP 20800683 A JP20800683 A JP 20800683A JP S60103099 A JPS60103099 A JP S60103099A
Authority
JP
Japan
Prior art keywords
substrate
diamond
plasma
diamond film
page
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58208006A
Other languages
English (en)
Japanese (ja)
Other versions
JPH04959B2 (enExample
Inventor
Hiroshi Aida
比呂史 会田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP58208006A priority Critical patent/JPS60103099A/ja
Publication of JPS60103099A publication Critical patent/JPS60103099A/ja
Publication of JPH04959B2 publication Critical patent/JPH04959B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
JP58208006A 1983-11-04 1983-11-04 ダイヤモンド膜の製造方法 Granted JPS60103099A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58208006A JPS60103099A (ja) 1983-11-04 1983-11-04 ダイヤモンド膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58208006A JPS60103099A (ja) 1983-11-04 1983-11-04 ダイヤモンド膜の製造方法

Publications (2)

Publication Number Publication Date
JPS60103099A true JPS60103099A (ja) 1985-06-07
JPH04959B2 JPH04959B2 (enExample) 1992-01-09

Family

ID=16549106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58208006A Granted JPS60103099A (ja) 1983-11-04 1983-11-04 ダイヤモンド膜の製造方法

Country Status (1)

Country Link
JP (1) JPS60103099A (enExample)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6265997A (ja) * 1985-09-18 1987-03-25 Nippon Soken Inc ダイヤモンド合成方法およびその装置
US4795656A (en) * 1986-08-26 1989-01-03 Kozo Iizuka, Director-General, Agency Of Industrial Science And Technology Cluster ion plating method for producing electrically conductive carbon film
US4869924A (en) * 1987-09-01 1989-09-26 Idemitsu Petrochemical Company Limited Method for synthesis of diamond and apparatus therefor
US4871581A (en) * 1987-07-13 1989-10-03 Semiconductor Energy Laboratory Co., Ltd. Carbon deposition by ECR CVD using a catalytic gas
JPH02111695A (ja) * 1988-10-20 1990-04-24 Res Dev Corp Of Japan ダイヤモンド状炭素薄膜の製造方法
US4985227A (en) * 1987-04-22 1991-01-15 Indemitsu Petrochemical Co., Ltd. Method for synthesis or diamond
US4997636A (en) * 1989-02-16 1991-03-05 Prins Johan F Diamond growth
US5192523A (en) * 1989-06-07 1993-03-09 Universal Energy Systems, Inc. Method for forming diamondlike carbon coating
US5427827A (en) * 1991-03-29 1995-06-27 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Deposition of diamond-like films by ECR microwave plasma
US5691010A (en) * 1993-10-19 1997-11-25 Sanyo Electric Co., Ltd. Arc discharge plasma CVD method for forming diamond-like carbon films
US5695832A (en) * 1993-07-07 1997-12-09 Sanyo Electric Co., Ltd. Method of forming a hard-carbon-film-coated substrate
US7094670B2 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Plasma immersion ion implantation process
US7288491B2 (en) 2000-08-11 2007-10-30 Applied Materials, Inc. Plasma immersion ion implantation process
US7291360B2 (en) 2004-03-26 2007-11-06 Applied Materials, Inc. Chemical vapor deposition plasma process using plural ion shower grids

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6265997A (ja) * 1985-09-18 1987-03-25 Nippon Soken Inc ダイヤモンド合成方法およびその装置
US4795656A (en) * 1986-08-26 1989-01-03 Kozo Iizuka, Director-General, Agency Of Industrial Science And Technology Cluster ion plating method for producing electrically conductive carbon film
US4985227A (en) * 1987-04-22 1991-01-15 Indemitsu Petrochemical Co., Ltd. Method for synthesis or diamond
US4984534A (en) * 1987-04-22 1991-01-15 Idemitsu Petrochemical Co., Ltd. Method for synthesis of diamond
US4871581A (en) * 1987-07-13 1989-10-03 Semiconductor Energy Laboratory Co., Ltd. Carbon deposition by ECR CVD using a catalytic gas
US4869924A (en) * 1987-09-01 1989-09-26 Idemitsu Petrochemical Company Limited Method for synthesis of diamond and apparatus therefor
JPH02111695A (ja) * 1988-10-20 1990-04-24 Res Dev Corp Of Japan ダイヤモンド状炭素薄膜の製造方法
US4997636A (en) * 1989-02-16 1991-03-05 Prins Johan F Diamond growth
US5192523A (en) * 1989-06-07 1993-03-09 Universal Energy Systems, Inc. Method for forming diamondlike carbon coating
US5427827A (en) * 1991-03-29 1995-06-27 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Deposition of diamond-like films by ECR microwave plasma
US5695832A (en) * 1993-07-07 1997-12-09 Sanyo Electric Co., Ltd. Method of forming a hard-carbon-film-coated substrate
US5691010A (en) * 1993-10-19 1997-11-25 Sanyo Electric Co., Ltd. Arc discharge plasma CVD method for forming diamond-like carbon films
US7094670B2 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Plasma immersion ion implantation process
US7288491B2 (en) 2000-08-11 2007-10-30 Applied Materials, Inc. Plasma immersion ion implantation process
US7291360B2 (en) 2004-03-26 2007-11-06 Applied Materials, Inc. Chemical vapor deposition plasma process using plural ion shower grids

Also Published As

Publication number Publication date
JPH04959B2 (enExample) 1992-01-09

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