JPS60103098A - ダイヤモンド膜の製造方法 - Google Patents

ダイヤモンド膜の製造方法

Info

Publication number
JPS60103098A
JPS60103098A JP58208005A JP20800583A JPS60103098A JP S60103098 A JPS60103098 A JP S60103098A JP 58208005 A JP58208005 A JP 58208005A JP 20800583 A JP20800583 A JP 20800583A JP S60103098 A JPS60103098 A JP S60103098A
Authority
JP
Japan
Prior art keywords
diamond film
substrate
diamond
reaction chamber
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58208005A
Other languages
English (en)
Japanese (ja)
Other versions
JPH04958B2 (enExample
Inventor
Hiroshi Aida
比呂史 会田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP58208005A priority Critical patent/JPS60103098A/ja
Publication of JPS60103098A publication Critical patent/JPS60103098A/ja
Publication of JPH04958B2 publication Critical patent/JPH04958B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP58208005A 1983-11-04 1983-11-04 ダイヤモンド膜の製造方法 Granted JPS60103098A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58208005A JPS60103098A (ja) 1983-11-04 1983-11-04 ダイヤモンド膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58208005A JPS60103098A (ja) 1983-11-04 1983-11-04 ダイヤモンド膜の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP31156392A Division JPH0742198B2 (ja) 1992-11-20 1992-11-20 ダイヤモンド膜の製造方法

Publications (2)

Publication Number Publication Date
JPS60103098A true JPS60103098A (ja) 1985-06-07
JPH04958B2 JPH04958B2 (enExample) 1992-01-09

Family

ID=16549090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58208005A Granted JPS60103098A (ja) 1983-11-04 1983-11-04 ダイヤモンド膜の製造方法

Country Status (1)

Country Link
JP (1) JPS60103098A (enExample)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6265997A (ja) * 1985-09-18 1987-03-25 Nippon Soken Inc ダイヤモンド合成方法およびその装置
US4882138A (en) * 1987-03-30 1989-11-21 Crystallume Method for preparation of diamond ceramics
US4973494A (en) * 1987-02-24 1990-11-27 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD method for depositing a boron nitride and carbon
JPH0317274A (ja) * 1990-06-01 1991-01-25 Semiconductor Energy Lab Co Ltd 被膜形成方法
US5075095A (en) * 1987-03-30 1991-12-24 Crystallume Method for preparation of diamond ceramics
US5104634A (en) * 1989-04-20 1992-04-14 Hercules Incorporated Process for forming diamond coating using a silent discharge plasma jet process
JPH04304376A (ja) * 1991-03-29 1992-10-27 Shimadzu Corp 硬質カーボン膜形成方法
US5427827A (en) * 1991-03-29 1995-06-27 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Deposition of diamond-like films by ECR microwave plasma
US5433788A (en) * 1987-01-19 1995-07-18 Hitachi, Ltd. Apparatus for plasma treatment using electron cyclotron resonance
US6110542A (en) * 1990-09-25 2000-08-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming a film
US6207281B1 (en) 1988-03-07 2001-03-27 Semiconductor Energy Laboratory Co., Ltd. Electrostatic-erasing abrasion-proof coating and method for forming the same
US6217661B1 (en) 1987-04-27 2001-04-17 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method
US6224952B1 (en) 1988-03-07 2001-05-01 Semiconductor Energy Laboratory Co., Ltd. Electrostatic-erasing abrasion-proof coating and method for forming the same
US6677001B1 (en) * 1986-11-10 2004-01-13 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD method and apparatus

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6265997A (ja) * 1985-09-18 1987-03-25 Nippon Soken Inc ダイヤモンド合成方法およびその装置
US6677001B1 (en) * 1986-11-10 2004-01-13 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD method and apparatus
US5433788A (en) * 1987-01-19 1995-07-18 Hitachi, Ltd. Apparatus for plasma treatment using electron cyclotron resonance
US4973494A (en) * 1987-02-24 1990-11-27 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD method for depositing a boron nitride and carbon
US5015494A (en) * 1987-02-24 1991-05-14 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD method for depositing diamond
US4882138A (en) * 1987-03-30 1989-11-21 Crystallume Method for preparation of diamond ceramics
US5075095A (en) * 1987-03-30 1991-12-24 Crystallume Method for preparation of diamond ceramics
US6423383B1 (en) 1987-04-27 2002-07-23 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method
US6217661B1 (en) 1987-04-27 2001-04-17 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method
US6838126B2 (en) 1987-04-27 2005-01-04 Semiconductor Energy Laboratory Co., Ltd. Method for forming I-carbon film
US6265070B1 (en) 1988-03-07 2001-07-24 Semiconductor Energy Laboratory Co., Ltd. Electrostatic-erasing abrasion-proof coating and method for forming the same
US6207281B1 (en) 1988-03-07 2001-03-27 Semiconductor Energy Laboratory Co., Ltd. Electrostatic-erasing abrasion-proof coating and method for forming the same
US6224952B1 (en) 1988-03-07 2001-05-01 Semiconductor Energy Laboratory Co., Ltd. Electrostatic-erasing abrasion-proof coating and method for forming the same
US6583481B2 (en) 1988-03-07 2003-06-24 Semiconductor Energy Laboratory Co., Ltd. Electrostatic-erasing abrasion-proof coating and method for forming the same
US7144629B2 (en) 1988-03-07 2006-12-05 Semiconductor Energy Laboratory Co., Ltd. Electrostatic-erasing abrasion-proof coating and method for forming the same
US5104634A (en) * 1989-04-20 1992-04-14 Hercules Incorporated Process for forming diamond coating using a silent discharge plasma jet process
JPH0317274A (ja) * 1990-06-01 1991-01-25 Semiconductor Energy Lab Co Ltd 被膜形成方法
US6110542A (en) * 1990-09-25 2000-08-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming a film
US6660342B1 (en) 1990-09-25 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Pulsed electromagnetic energy method for forming a film
US7125588B2 (en) 1990-09-25 2006-10-24 Semiconductor Energy Laboratory Co., Ltd. Pulsed plasma CVD method for forming a film
US5427827A (en) * 1991-03-29 1995-06-27 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Deposition of diamond-like films by ECR microwave plasma
JPH04304376A (ja) * 1991-03-29 1992-10-27 Shimadzu Corp 硬質カーボン膜形成方法

Also Published As

Publication number Publication date
JPH04958B2 (enExample) 1992-01-09

Similar Documents

Publication Publication Date Title
JPS60103098A (ja) ダイヤモンド膜の製造方法
US5462776A (en) Conversion of fullerenes to diamonds
Wen et al. Synthesis and crystal structure of n-diamond
JPS5930709A (ja) 炭素膜及び／又は炭素粒子の製造方法
JPH04270193A (ja) 同位体として純粋な単結晶エピタキシャルダイヤモンド薄膜およびその製法
JPS60103099A (ja) ダイヤモンド膜の製造方法
JPS62103367A (ja) 炭素膜の合成方法
JPS61158899A (ja) ダイヤモンド膜の製法
US5201986A (en) Diamond synthesizing method
JPS61183198A (ja) ダイヤモンド膜の製法
Magee Photolysis of methane by vacuum‐ultraviolet light
US5380516A (en) Process for synthesizing diamond in a vapor phase
JPS6184379A (ja) 高硬度窒化ホウ素膜の製法
JPS63288991A (ja) ダイヤモンドの気相合成法
JPS60116780A (ja) 高硬度窒化ホウ素膜の製造方法
JPS63265890A (ja) ダイヤモンド薄膜又はダイヤモンド状薄膜の製造方法
JPS63123897A (ja) ダイヤモンド薄膜又はダイヤモンド状薄膜の製造方法
JPH08208207A (ja) 窒化ホウ素の気相合成法
JPS62280364A (ja) 硬質窒化硼素の合成方法
JPS63215596A (ja) ダイヤモンド薄膜又はダイヤモンド状薄膜の製造方法
RU2054056C1 (ru) Способ получения изотопически чистых алмазных пленок
JPS63185891A (ja) ダイヤモンド薄膜又はダイヤモンド状薄膜の製造方法
JPH01103988A (ja) イオンサイクロトロン共鳴法による硬質膜の製造方法
JPH0742198B2 (ja) ダイヤモンド膜の製造方法
JPS63230507A (ja) 高結晶性六方晶窒化ほう素の合成方法