JPS6010108B2 - 窒化珪素を基体上に熱分解堆積する方法 - Google Patents
窒化珪素を基体上に熱分解堆積する方法Info
- Publication number
- JPS6010108B2 JPS6010108B2 JP51139391A JP13939176A JPS6010108B2 JP S6010108 B2 JPS6010108 B2 JP S6010108B2 JP 51139391 A JP51139391 A JP 51139391A JP 13939176 A JP13939176 A JP 13939176A JP S6010108 B2 JPS6010108 B2 JP S6010108B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- furnace
- substrate
- ammonia
- depositing silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US63501275A | 1975-11-25 | 1975-11-25 | |
| US635012 | 1975-11-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5265199A JPS5265199A (en) | 1977-05-30 |
| JPS6010108B2 true JPS6010108B2 (ja) | 1985-03-15 |
Family
ID=24546063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51139391A Expired JPS6010108B2 (ja) | 1975-11-25 | 1976-11-19 | 窒化珪素を基体上に熱分解堆積する方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS6010108B2 (mo) |
| DE (1) | DE2652449C2 (mo) |
| FR (1) | FR2332802A1 (mo) |
| GB (1) | GB1518564A (mo) |
| HK (1) | HK881A (mo) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0248706U (mo) * | 1988-09-27 | 1990-04-04 | ||
| JPH10309777A (ja) * | 1997-02-10 | 1998-11-24 | Saint Gobain Vitrage | 少なくとも一つの薄層を備えた透明基材及びその製法 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3118848C2 (de) * | 1980-05-12 | 1983-05-19 | Mitsubishi Denki K.K., Tokyo | Niederdruck-Beschichtungsvorrichtung |
| GB2213836B (en) * | 1987-12-18 | 1992-08-26 | Gen Electric Co Plc | Vacuum deposition process |
| JP2004071970A (ja) * | 2002-08-08 | 2004-03-04 | Shin Etsu Chem Co Ltd | 太陽電池用シリコン基板の製造方法およびその製造システム |
| CN115142048B (zh) * | 2022-06-30 | 2023-07-07 | 北海惠科半导体科技有限公司 | 晶圆载具及氮化硅介质膜的制备方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1251287C2 (de) * | 1962-09-10 | 1975-10-09 | United Aircraft Corporation, East Hartford, Conn. (V.St.A.) | Verfahren zur herstellung von nichtporoesem siliciumnitrid |
| FR1521174A (fr) * | 1966-05-02 | 1968-04-12 | Siemens Ag | Procédé pour réaliser une couche protectrice, notamment sur la surface d'un cristal semi-conducteur |
| US3549411A (en) * | 1967-06-27 | 1970-12-22 | Texas Instruments Inc | Method of preparing silicon nitride films |
| US3652324A (en) * | 1968-08-15 | 1972-03-28 | Westinghouse Electric Corp | A METHOD OF VAPOR DEPOSITING A LAYER OF Si{11 N{11 {0 ON A SILICON BASE |
| US3856587A (en) * | 1971-03-26 | 1974-12-24 | Co Yamazaki Kogyo Kk | Method of fabricating semiconductor memory device gate |
| US3900597A (en) * | 1973-12-19 | 1975-08-19 | Motorola Inc | System and process for deposition of polycrystalline silicon with silane in vacuum |
-
1976
- 1976-10-28 GB GB4484876A patent/GB1518564A/en not_active Expired
- 1976-11-17 DE DE19762652449 patent/DE2652449C2/de not_active Expired
- 1976-11-19 JP JP51139391A patent/JPS6010108B2/ja not_active Expired
- 1976-11-25 FR FR7635591A patent/FR2332802A1/fr active Granted
-
1981
- 1981-01-15 HK HK881A patent/HK881A/xx unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0248706U (mo) * | 1988-09-27 | 1990-04-04 | ||
| JPH10309777A (ja) * | 1997-02-10 | 1998-11-24 | Saint Gobain Vitrage | 少なくとも一つの薄層を備えた透明基材及びその製法 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2652449C2 (de) | 1982-06-09 |
| DE2652449A1 (de) | 1977-05-26 |
| HK881A (en) | 1981-01-23 |
| GB1518564A (en) | 1978-07-19 |
| FR2332802B1 (mo) | 1981-12-24 |
| FR2332802A1 (fr) | 1977-06-24 |
| JPS5265199A (en) | 1977-05-30 |
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