JPS5988307A - 炭化けい素被覆物の製造方法 - Google Patents

炭化けい素被覆物の製造方法

Info

Publication number
JPS5988307A
JPS5988307A JP57195702A JP19570282A JPS5988307A JP S5988307 A JPS5988307 A JP S5988307A JP 57195702 A JP57195702 A JP 57195702A JP 19570282 A JP19570282 A JP 19570282A JP S5988307 A JPS5988307 A JP S5988307A
Authority
JP
Japan
Prior art keywords
silicon carbide
substrate
organosilicon compound
plate
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57195702A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6117910B2 (enrdf_load_stackoverflow
Inventor
Morinobu Endo
守信 遠藤
Minoru Takamizawa
高見沢 稔
Tatsuhiko Motomiya
本宮 達彦
Yasushi Kobayashi
小林 泰史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP57195702A priority Critical patent/JPS5988307A/ja
Priority to US06/533,649 priority patent/US4560589A/en
Publication of JPS5988307A publication Critical patent/JPS5988307A/ja
Publication of JPS6117910B2 publication Critical patent/JPS6117910B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81Coating or impregnation
    • C04B41/85Coating or impregnation with inorganic materials
    • C04B41/87Ceramics
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5053Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
    • C04B41/5057Carbides
    • C04B41/5059Silicon carbide
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32Carbides
    • C23C16/325Silicon carbide
    • DTEXTILES; PAPER
    • D01NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
    • D01FCHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
    • D01F11/00Chemical after-treatment of artificial filaments or the like during manufacture
    • D01F11/10Chemical after-treatment of artificial filaments or the like during manufacture of carbon
    • D01F11/12Chemical after-treatment of artificial filaments or the like during manufacture of carbon with inorganic substances ; Intercalation
    • D01F11/126Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Structural Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Textile Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Surface Treatment Of Glass (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
JP57195702A 1982-09-22 1982-11-08 炭化けい素被覆物の製造方法 Granted JPS5988307A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP57195702A JPS5988307A (ja) 1982-11-08 1982-11-08 炭化けい素被覆物の製造方法
US06/533,649 US4560589A (en) 1982-09-22 1983-09-19 Method for providing a coating layer of silicon carbide on substrate surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57195702A JPS5988307A (ja) 1982-11-08 1982-11-08 炭化けい素被覆物の製造方法

Publications (2)

Publication Number Publication Date
JPS5988307A true JPS5988307A (ja) 1984-05-22
JPS6117910B2 JPS6117910B2 (enrdf_load_stackoverflow) 1986-05-09

Family

ID=16345554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57195702A Granted JPS5988307A (ja) 1982-09-22 1982-11-08 炭化けい素被覆物の製造方法

Country Status (1)

Country Link
JP (1) JPS5988307A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0489377A (ja) * 1990-07-27 1992-03-23 Natl Res Inst For Metals 高強度SiC・炭素繊維複合材とその製造方法
JP2002293523A (ja) * 2001-03-30 2002-10-09 Japan Fine Ceramics Center カーボンナノチューブ膜、カーボンナノチューブ膜含有SiC基板、カーボンナノチューブ膜体及びそれらの製造方法
JP2003063813A (ja) * 2001-08-29 2003-03-05 Japan Fine Ceramics Center カーボンナノチューブ膜、カーボンナノチューブ膜体及びカーボンナノチューブ膜付き基板並びにそれらの製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
POWDER METALLUGY INTERNATIONAL=1980 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0489377A (ja) * 1990-07-27 1992-03-23 Natl Res Inst For Metals 高強度SiC・炭素繊維複合材とその製造方法
JP2002293523A (ja) * 2001-03-30 2002-10-09 Japan Fine Ceramics Center カーボンナノチューブ膜、カーボンナノチューブ膜含有SiC基板、カーボンナノチューブ膜体及びそれらの製造方法
JP2003063813A (ja) * 2001-08-29 2003-03-05 Japan Fine Ceramics Center カーボンナノチューブ膜、カーボンナノチューブ膜体及びカーボンナノチューブ膜付き基板並びにそれらの製造方法

Also Published As

Publication number Publication date
JPS6117910B2 (enrdf_load_stackoverflow) 1986-05-09

Similar Documents

Publication Publication Date Title
KR100284374B1 (ko) 결정상 탄화규소 피막의 형성방법
JP3545459B2 (ja) 低温における結晶質炭化ケイ素コーティングの作成方法
JPS59128281A (ja) 炭化けい素被覆物の製造方法
JPS6346039B2 (enrdf_load_stackoverflow)
WO1990003452A1 (en) Chemical vapor deposition of silicon carbide
EP0723600B1 (en) Process for the preparation of silicon carbide films using single organosilicon compounds
JPS5988307A (ja) 炭化けい素被覆物の製造方法
JP4736076B2 (ja) SiC膜被覆ガラス状炭素材およびその製造方法
CN117702078A (zh) 采用新型原料体系制备纯碳化硅涂层的化学气相沉积方法
US20050255245A1 (en) Method and apparatus for the chemical vapor deposition of materials
JPS6221868B2 (enrdf_load_stackoverflow)
JPS6115150B2 (enrdf_load_stackoverflow)
WO2010032673A1 (ja) ニッケル含有膜形成材料およびニッケル含有膜の製造方法
JPS63225591A (ja) 炭化珪素被覆黒鉛材料の製造方法
JP2001262346A (ja) ピンホ−ルを低減したSiC被覆黒鉛部材の製法
TWI747440B (zh) 新穎的矽烷基環二矽氮烷化合物、以及使用其之製備含矽薄膜的方法
JP3925884B2 (ja) SiC被膜の被覆方法
JP4289141B2 (ja) 有機シリコン化合物及びその溶液原料並びに該化合物を用いたシリコン含有膜の形成方法
JPH02228475A (ja) 炭化ケイ素被膜の製造方法
JP2822970B2 (ja) 炭化硅素薄膜の形成方法
JP2649679B2 (ja) 気相成長用サセプター及びその製造方法
JPS627620A (ja) 多結晶シリコン製造用反応管
JP4336929B2 (ja) 絶縁膜形成材料及び絶縁膜の形成方法
TW202523893A (zh) 含矽膜之成膜方法
KR20150059129A (ko) 유기 14족 준금속 아자이드 화합물 및 이를 이용한 박막 증착 방법