JPS596269B2 - ガラスおよびその製造方法 - Google Patents

ガラスおよびその製造方法

Info

Publication number
JPS596269B2
JPS596269B2 JP52052153A JP5215377A JPS596269B2 JP S596269 B2 JPS596269 B2 JP S596269B2 JP 52052153 A JP52052153 A JP 52052153A JP 5215377 A JP5215377 A JP 5215377A JP S596269 B2 JPS596269 B2 JP S596269B2
Authority
JP
Japan
Prior art keywords
glass
pbo
expressed
sio
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52052153A
Other languages
English (en)
Japanese (ja)
Other versions
JPS52136211A (en
Inventor
ヘンドリカス・ヨ−ハン・ロデウイツケ・トラツプ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPS52136211A publication Critical patent/JPS52136211A/ja
Publication of JPS596269B2 publication Critical patent/JPS596269B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H10P14/6936—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing two or more metal elements
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/102—Glass compositions containing silica with 40% to 90% silica, by weight containing lead
    • C03C3/105—Glass compositions containing silica with 40% to 90% silica, by weight containing lead containing aluminium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H10P14/6929—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing aluminium, e.g. AlSiOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Glass Compositions (AREA)
  • Formation Of Insulating Films (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Inorganic Insulating Materials (AREA)
JP52052153A 1976-05-10 1977-05-09 ガラスおよびその製造方法 Expired JPS596269B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL000007604951 1976-05-10
NL7604951A NL7604951A (nl) 1976-05-10 1976-05-10 Glas voor het passiveren van halfgeleider- inrichtingen.

Publications (2)

Publication Number Publication Date
JPS52136211A JPS52136211A (en) 1977-11-14
JPS596269B2 true JPS596269B2 (ja) 1984-02-09

Family

ID=19826155

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52052153A Expired JPS596269B2 (ja) 1976-05-10 1977-05-09 ガラスおよびその製造方法

Country Status (11)

Country Link
US (1) US4156250A (oth)
JP (1) JPS596269B2 (oth)
AU (1) AU508674B2 (oth)
BE (1) BE854424A (oth)
CA (1) CA1075271A (oth)
DE (1) DE2720639C2 (oth)
FR (1) FR2351065A1 (oth)
GB (1) GB1568156A (oth)
IT (1) IT1085541B (oth)
NL (1) NL7604951A (oth)
SE (1) SE428293B (oth)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2410366A1 (fr) * 1977-11-29 1979-06-22 Radiotechnique Compelec Transistor de type mesa et procede de realisation de ce transistor
US4168960A (en) * 1978-04-18 1979-09-25 Westinghouse Electric Corp. Method of making a glass encapsulated diode
JPS55133569A (en) * 1979-04-06 1980-10-17 Hitachi Ltd Semiconductor device
JPS55160437A (en) * 1979-05-31 1980-12-13 Hitachi Ltd Semiconductor device
US4490737A (en) * 1981-03-16 1984-12-25 Fairchild Camera & Instrument Corp. Smooth glass insulating film over interconnects on an integrated circuit
FR2542148B1 (fr) * 1983-03-01 1986-12-05 Telemecanique Electrique Circuit de commande d'un dispositif a semi-conducteur sensible du type thyristor ou triac, avec impedance d'assistance a l'auto-allumage et son application a la realisation d'un montage commutateur associant un thyristor sensible a un thyristor moins sensible
DE3331298A1 (de) * 1983-08-31 1985-03-14 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungsthyristor auf einem substrat
KR970000416B1 (ko) * 1985-05-31 1997-01-09 사이언티픽 이매징 테크놀로지시 이코포레이티드 규소웨이퍼 보강재 및 보강방법
US4946716A (en) * 1985-05-31 1990-08-07 Tektronix, Inc. Method of thinning a silicon wafer using a reinforcing material
CN1298029C (zh) * 2003-03-26 2007-01-31 中国电子科技集团公司第五十五研究所 射频台式硅二极管电泳沉积玻璃钝化共形膜制备方法
WO2022080096A1 (ja) * 2020-10-13 2022-04-21 日本電気硝子株式会社 半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3241010A (en) * 1962-03-23 1966-03-15 Texas Instruments Inc Semiconductor junction passivation
US3542572A (en) * 1968-06-24 1970-11-24 Corning Glass Works Germania-silica glasses
US3801878A (en) * 1971-03-09 1974-04-02 Innotech Corp Glass switching device using an ion impermeable glass active layer
US4073654A (en) * 1975-12-15 1978-02-14 Corning Glass Works Optical articles prepared from hydrated glasses

Also Published As

Publication number Publication date
DE2720639C2 (de) 1984-01-19
NL7604951A (nl) 1977-11-14
JPS52136211A (en) 1977-11-14
GB1568156A (en) 1980-05-29
CA1075271A (en) 1980-04-08
FR2351065A1 (fr) 1977-12-09
FR2351065B1 (oth) 1980-03-28
SE428293B (sv) 1983-06-20
AU508674B2 (en) 1980-03-27
IT1085541B (it) 1985-05-28
BE854424A (fr) 1977-11-09
SE7705357L (sv) 1977-11-11
AU2496377A (en) 1978-11-09
DE2720639A1 (de) 1977-12-01
US4156250A (en) 1979-05-22

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