JPS5957446A - 静電吸着式基板保持装置 - Google Patents
静電吸着式基板保持装置Info
- Publication number
- JPS5957446A JPS5957446A JP16765982A JP16765982A JPS5957446A JP S5957446 A JPS5957446 A JP S5957446A JP 16765982 A JP16765982 A JP 16765982A JP 16765982 A JP16765982 A JP 16765982A JP S5957446 A JPS5957446 A JP S5957446A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- dielectric film
- film
- baked
- electrode patterns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 44
- 238000001179 sorption measurement Methods 0.000 title claims description 9
- 239000011521 glass Substances 0.000 claims abstract description 11
- 239000000919 ceramic Substances 0.000 claims abstract description 7
- 238000010304 firing Methods 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 239000000463 material Substances 0.000 abstract description 11
- 239000004020 conductor Substances 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 238000005498 polishing Methods 0.000 abstract description 2
- 238000007639 printing Methods 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 229910001252 Pd alloy Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 25
- 238000010586 diagram Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000007872 degassing Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010943 off-gassing Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 229920002379 silicone rubber Polymers 0.000 description 3
- 239000004945 silicone rubber Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 241000270708 Testudinidae Species 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011236 particulate material Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Jigs For Machine Tools (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16765982A JPS5957446A (ja) | 1982-09-28 | 1982-09-28 | 静電吸着式基板保持装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16765982A JPS5957446A (ja) | 1982-09-28 | 1982-09-28 | 静電吸着式基板保持装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5957446A true JPS5957446A (ja) | 1984-04-03 |
| JPS6219060B2 JPS6219060B2 (enrdf_load_html_response) | 1987-04-25 |
Family
ID=15853850
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16765982A Granted JPS5957446A (ja) | 1982-09-28 | 1982-09-28 | 静電吸着式基板保持装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5957446A (enrdf_load_html_response) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6156842A (ja) * | 1984-08-27 | 1986-03-22 | Kokusai Electric Co Ltd | 静電吸着板 |
| JPS62157752A (ja) * | 1985-12-29 | 1987-07-13 | Kyocera Corp | 静電チヤツク |
| JPS62264638A (ja) * | 1987-04-21 | 1987-11-17 | Toto Ltd | 静電チヤツク基盤の製造方法 |
| JPS62286247A (ja) * | 1986-06-05 | 1987-12-12 | Toto Ltd | 静電チヤツク板及びその製造方法 |
| JPS62286248A (ja) * | 1986-06-05 | 1987-12-12 | Toto Ltd | 静電チヤツク板及びその製造方法 |
| JPH0531239U (ja) * | 1991-10-02 | 1993-04-23 | 住友金属工業株式会社 | 静電チヤツク |
| US5384681A (en) * | 1993-03-01 | 1995-01-24 | Toto Ltd. | Electrostatic chuck |
| KR100420456B1 (ko) * | 2000-01-20 | 2004-03-02 | 스미토모덴키고교가부시키가이샤 | 반도체 제조 장치용 웨이퍼 지지체와 그 제조 방법 및반도체 제조 장치 |
| CN106910703A (zh) * | 2017-03-10 | 2017-06-30 | 京东方科技集团股份有限公司 | 载台及其制备方法、加工装置及其操作方法 |
| WO2024232306A1 (ja) * | 2023-05-11 | 2024-11-14 | 国立大学法人 東京大学 | 測定装置、測定方法及び校正方法 |
-
1982
- 1982-09-28 JP JP16765982A patent/JPS5957446A/ja active Granted
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6156842A (ja) * | 1984-08-27 | 1986-03-22 | Kokusai Electric Co Ltd | 静電吸着板 |
| JPS62157752A (ja) * | 1985-12-29 | 1987-07-13 | Kyocera Corp | 静電チヤツク |
| JPS62286247A (ja) * | 1986-06-05 | 1987-12-12 | Toto Ltd | 静電チヤツク板及びその製造方法 |
| JPS62286248A (ja) * | 1986-06-05 | 1987-12-12 | Toto Ltd | 静電チヤツク板及びその製造方法 |
| JPS62264638A (ja) * | 1987-04-21 | 1987-11-17 | Toto Ltd | 静電チヤツク基盤の製造方法 |
| JPH0531239U (ja) * | 1991-10-02 | 1993-04-23 | 住友金属工業株式会社 | 静電チヤツク |
| US5384681A (en) * | 1993-03-01 | 1995-01-24 | Toto Ltd. | Electrostatic chuck |
| KR100420456B1 (ko) * | 2000-01-20 | 2004-03-02 | 스미토모덴키고교가부시키가이샤 | 반도체 제조 장치용 웨이퍼 지지체와 그 제조 방법 및반도체 제조 장치 |
| CN106910703A (zh) * | 2017-03-10 | 2017-06-30 | 京东方科技集团股份有限公司 | 载台及其制备方法、加工装置及其操作方法 |
| WO2024232306A1 (ja) * | 2023-05-11 | 2024-11-14 | 国立大学法人 東京大学 | 測定装置、測定方法及び校正方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6219060B2 (enrdf_load_html_response) | 1987-04-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0049588B1 (en) | Method and apparatus for dry etching and electrostatic chucking device used therein | |
| US6781812B2 (en) | Chuck equipment | |
| US5539179A (en) | Electrostatic chuck having a multilayer structure for attracting an object | |
| KR0165114B1 (ko) | 정전식 웨이퍼 이송 블레이드 및 그러한 블레이드에서의 정전 결합력을 최대화하는 방법 | |
| US5847918A (en) | Electrostatic clamping method and apparatus for dielectric workpieces in vacuum processors | |
| KR880014650A (ko) | 플라즈마 도핑방법 | |
| WO2000072376A1 (fr) | Mandrin electrostatique et dispositif de traitement | |
| JPS5957446A (ja) | 静電吸着式基板保持装置 | |
| KR20020030076A (ko) | 정전기 척 및 그 제조 방법 | |
| JPS63194345A (ja) | 静電チヤツク | |
| JPH04236449A (ja) | 静電チャック | |
| JPH0727961B2 (ja) | 静電チャック板の製造方法 | |
| KR0171062B1 (ko) | 드라이에칭장치 | |
| JPH03204924A (ja) | 試料保持装置 | |
| JPH06177231A (ja) | 静電チャック | |
| JP2851766B2 (ja) | 静電チャック | |
| US11195700B2 (en) | Etching apparatus | |
| JPH0831917A (ja) | 静電チャック及びその製造法 | |
| JP4416911B2 (ja) | 真空処理方法 | |
| JP3218717B2 (ja) | 静電チャック | |
| JP2000216228A (ja) | 基板固定台 | |
| JP4030360B2 (ja) | 静電吸着装置及びこれを用いた真空処理装置 | |
| JPH09321128A (ja) | 静電吸着装置 | |
| JP2001217304A (ja) | 基板ステージ、それを用いた基板処理装置および基板処理方法 | |
| JP2006049357A (ja) | 静電チャックおよび静電チャックを搭載した装置 |