JPS5956724A - マイクロ波プラズマによる薄膜形成方法 - Google Patents

マイクロ波プラズマによる薄膜形成方法

Info

Publication number
JPS5956724A
JPS5956724A JP57166637A JP16663782A JPS5956724A JP S5956724 A JPS5956724 A JP S5956724A JP 57166637 A JP57166637 A JP 57166637A JP 16663782 A JP16663782 A JP 16663782A JP S5956724 A JPS5956724 A JP S5956724A
Authority
JP
Japan
Prior art keywords
thin film
tube
plasma
discharge tube
space
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57166637A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6312377B2 (enExample
Inventor
Isamu Kato
勇 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP57166637A priority Critical patent/JPS5956724A/ja
Publication of JPS5956724A publication Critical patent/JPS5956724A/ja
Publication of JPS6312377B2 publication Critical patent/JPS6312377B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
JP57166637A 1982-09-27 1982-09-27 マイクロ波プラズマによる薄膜形成方法 Granted JPS5956724A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57166637A JPS5956724A (ja) 1982-09-27 1982-09-27 マイクロ波プラズマによる薄膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57166637A JPS5956724A (ja) 1982-09-27 1982-09-27 マイクロ波プラズマによる薄膜形成方法

Publications (2)

Publication Number Publication Date
JPS5956724A true JPS5956724A (ja) 1984-04-02
JPS6312377B2 JPS6312377B2 (enExample) 1988-03-18

Family

ID=15834969

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57166637A Granted JPS5956724A (ja) 1982-09-27 1982-09-27 マイクロ波プラズマによる薄膜形成方法

Country Status (1)

Country Link
JP (1) JPS5956724A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61133239A (ja) * 1984-12-03 1986-06-20 Sachiko Okazaki フツ素含有表面薄層を有する成形品
US5417770A (en) * 1992-06-30 1995-05-23 Canon Kabushiki Kaisha Photovoltaic device and a forming method thereof
US6057005A (en) * 1996-12-12 2000-05-02 Canon Kabushiki Kaisha Method of forming semiconductor thin film

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101125086B1 (ko) * 2007-04-17 2012-03-21 가부시키가이샤 알박 성막장치

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61133239A (ja) * 1984-12-03 1986-06-20 Sachiko Okazaki フツ素含有表面薄層を有する成形品
JPH0665408A (ja) * 1984-12-03 1994-03-08 Sachiko Okazaki フッ素含有表面薄層を有する成形品の製造方法
US5417770A (en) * 1992-06-30 1995-05-23 Canon Kabushiki Kaisha Photovoltaic device and a forming method thereof
US5527396A (en) * 1992-06-30 1996-06-18 Canon Kabushiki Kaisha Deposited film forming apparatus
US6057005A (en) * 1996-12-12 2000-05-02 Canon Kabushiki Kaisha Method of forming semiconductor thin film

Also Published As

Publication number Publication date
JPS6312377B2 (enExample) 1988-03-18

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