JPS5956574A - チタン・シリサイド膜の形成方法 - Google Patents

チタン・シリサイド膜の形成方法

Info

Publication number
JPS5956574A
JPS5956574A JP16610582A JP16610582A JPS5956574A JP S5956574 A JPS5956574 A JP S5956574A JP 16610582 A JP16610582 A JP 16610582A JP 16610582 A JP16610582 A JP 16610582A JP S5956574 A JPS5956574 A JP S5956574A
Authority
JP
Japan
Prior art keywords
gaseous
gas
titanium
reaction
titanium silicide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16610582A
Other languages
English (en)
Japanese (ja)
Other versions
JPH032950B2 (cg-RX-API-DMAC7.html
Inventor
Yoshimi Shiotani
喜美 塩谷
Mamoru Maeda
守 前田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16610582A priority Critical patent/JPS5956574A/ja
Publication of JPS5956574A publication Critical patent/JPS5956574A/ja
Publication of JPH032950B2 publication Critical patent/JPH032950B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP16610582A 1982-09-24 1982-09-24 チタン・シリサイド膜の形成方法 Granted JPS5956574A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16610582A JPS5956574A (ja) 1982-09-24 1982-09-24 チタン・シリサイド膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16610582A JPS5956574A (ja) 1982-09-24 1982-09-24 チタン・シリサイド膜の形成方法

Publications (2)

Publication Number Publication Date
JPS5956574A true JPS5956574A (ja) 1984-04-02
JPH032950B2 JPH032950B2 (cg-RX-API-DMAC7.html) 1991-01-17

Family

ID=15825102

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16610582A Granted JPS5956574A (ja) 1982-09-24 1982-09-24 チタン・シリサイド膜の形成方法

Country Status (1)

Country Link
JP (1) JPS5956574A (cg-RX-API-DMAC7.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2554132A1 (fr) * 1983-10-31 1985-05-03 Advanced Semiconductor Mat Procede de depot de siliciure metallique par depot de vapeur chimique, exalte par du plasma
FR2623014A1 (fr) * 1987-11-09 1989-05-12 France Etat Procede de depot selectif d'un siliciure de metal refractaire sur des zones de silicium
US5167986A (en) * 1988-04-15 1992-12-01 Gordon Roy G Titanium silicide-coated glass windows

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56100126A (en) * 1980-01-08 1981-08-11 Konishiroku Photo Ind Co Ltd Manufacture of amorphous silicon
JPS5767016A (en) * 1980-10-09 1982-04-23 Nippon Telegr & Teleph Corp <Ntt> Manufacture of thin silicon film

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56100126A (en) * 1980-01-08 1981-08-11 Konishiroku Photo Ind Co Ltd Manufacture of amorphous silicon
JPS5767016A (en) * 1980-10-09 1982-04-23 Nippon Telegr & Teleph Corp <Ntt> Manufacture of thin silicon film

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2554132A1 (fr) * 1983-10-31 1985-05-03 Advanced Semiconductor Mat Procede de depot de siliciure metallique par depot de vapeur chimique, exalte par du plasma
JPS6096763A (ja) * 1983-10-31 1985-05-30 アドヴアンスト　セミコンダクタ−　マテイリアルズ　アメリカ　インコ−ポレ−テツド プラズマ強化化学蒸着によるケイ化チタンを含む低抵抗率膜の製造方法
FR2623014A1 (fr) * 1987-11-09 1989-05-12 France Etat Procede de depot selectif d'un siliciure de metal refractaire sur des zones de silicium
US5167986A (en) * 1988-04-15 1992-12-01 Gordon Roy G Titanium silicide-coated glass windows

Also Published As

Publication number Publication date
JPH032950B2 (cg-RX-API-DMAC7.html) 1991-01-17

Similar Documents

Publication Publication Date Title
CA1238822A (en) Method for the manufacture of metal silicide layers by means of reduced pressure gas phase deposition
US5238866A (en) Plasma enhanced chemical vapor deposition process for producing an amorphous semiconductive surface coating
EP0076426B1 (en) Multiple chamber deposition and isolation system and method
US5173327A (en) LPCVD process for depositing titanium films for semiconductor devices
US4292343A (en) Method of manufacturing semiconductor bodies composed of amorphous silicon
US5653810A (en) Apparatus for forming metal film and process for forming metal film
JPS62156811A (ja) 薄膜半導体素子及びその形成法
JPS5956574A (ja) チタン・シリサイド膜の形成方法
JP2654790B2 (ja) 気相成長法
JPS62156813A (ja) 薄膜半導体素子及びその形成法
KR100249825B1 (ko) 유기금속 화합물 전구체에 의한 구리박막의 화학증착 방법
JP2006128611A (ja) 膜形成材料、膜形成方法、及び素子
JPH079059B2 (ja) 炭素薄膜の製造方法
US7300890B1 (en) Method and apparatus for forming conformal SiNx films
JPS59207828A (ja) シリコン薄膜の形成方法
JPH02110919A (ja) 成膜装置
JPH0156142B2 (cg-RX-API-DMAC7.html)
JPH11260726A (ja) 単結晶シリコン薄膜と多結晶シリコン薄膜の製造方法
KR980011792A (ko) 화학기상증착(cvd)장치를 이용한 박막 형성방법
JPH04116155A (ja) 薄膜の形成方法
JPS58101421A (ja) 堆積膜の製造装置
JPS62163314A (ja) 薄膜多層構造およびその形成方法
JPS59184519A (ja) イオン化クラスタビーム発生方法
JP2006097099A (ja) 膜形成材料、膜形成方法、及び素子
JPS6318856B2 (cg-RX-API-DMAC7.html)