JPS595620A - インジウム−ガリウム−アンチモン系化合物薄膜の製造方法 - Google Patents

インジウム−ガリウム−アンチモン系化合物薄膜の製造方法

Info

Publication number
JPS595620A
JPS595620A JP57113858A JP11385882A JPS595620A JP S595620 A JPS595620 A JP S595620A JP 57113858 A JP57113858 A JP 57113858A JP 11385882 A JP11385882 A JP 11385882A JP S595620 A JPS595620 A JP S595620A
Authority
JP
Japan
Prior art keywords
thin film
gallium
indium
substrate
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57113858A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0359570B2 (enExample
Inventor
Keiji Kuboyama
久保山　啓治
Takeki Matsui
雄毅 松居
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Kasei Corp
Asahi Chemical Industry Co Ltd
Original Assignee
Asahi Chemical Industry Co Ltd
Asahi Kasei Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Chemical Industry Co Ltd, Asahi Kasei Kogyo KK filed Critical Asahi Chemical Industry Co Ltd
Priority to JP57113858A priority Critical patent/JPS595620A/ja
Publication of JPS595620A publication Critical patent/JPS595620A/ja
Publication of JPH0359570B2 publication Critical patent/JPH0359570B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3422—Antimonides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering

Landscapes

  • Inorganic Compounds Of Heavy Metals (AREA)
  • Physical Vapour Deposition (AREA)
  • Hall/Mr Elements (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP57113858A 1982-07-02 1982-07-02 インジウム−ガリウム−アンチモン系化合物薄膜の製造方法 Granted JPS595620A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57113858A JPS595620A (ja) 1982-07-02 1982-07-02 インジウム−ガリウム−アンチモン系化合物薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57113858A JPS595620A (ja) 1982-07-02 1982-07-02 インジウム−ガリウム−アンチモン系化合物薄膜の製造方法

Publications (2)

Publication Number Publication Date
JPS595620A true JPS595620A (ja) 1984-01-12
JPH0359570B2 JPH0359570B2 (enExample) 1991-09-11

Family

ID=14622837

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57113858A Granted JPS595620A (ja) 1982-07-02 1982-07-02 インジウム−ガリウム−アンチモン系化合物薄膜の製造方法

Country Status (1)

Country Link
JP (1) JPS595620A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0210882A (ja) * 1988-06-29 1990-01-16 Matsushita Electric Ind Co Ltd 半導体薄膜磁気抵抗素子およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0210882A (ja) * 1988-06-29 1990-01-16 Matsushita Electric Ind Co Ltd 半導体薄膜磁気抵抗素子およびその製造方法

Also Published As

Publication number Publication date
JPH0359570B2 (enExample) 1991-09-11

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