JPS59501139A - 融合された珪化白金ヒュ−ズおよびショットキダイオ−ドならびにその製造方法 - Google Patents
融合された珪化白金ヒュ−ズおよびショットキダイオ−ドならびにその製造方法Info
- Publication number
- JPS59501139A JPS59501139A JP58500094A JP50009482A JPS59501139A JP S59501139 A JPS59501139 A JP S59501139A JP 58500094 A JP58500094 A JP 58500094A JP 50009482 A JP50009482 A JP 50009482A JP S59501139 A JPS59501139 A JP S59501139A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- metal
- silicon
- polycrystalline
- silicon layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 title description 24
- 229910021339 platinum silicide Inorganic materials 0.000 title description 24
- 229910052751 metal Inorganic materials 0.000 claims description 54
- 239000002184 metal Substances 0.000 claims description 54
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 54
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 48
- 229910052710 silicon Inorganic materials 0.000 claims description 47
- 239000010703 silicon Substances 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 38
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 28
- 229910052697 platinum Inorganic materials 0.000 claims description 27
- 229920005591 polysilicon Polymers 0.000 claims description 23
- 229910021332 silicide Inorganic materials 0.000 claims description 15
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 238000005245 sintering Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 106
- 238000000151 deposition Methods 0.000 claims 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 239000003870 refractory metal Substances 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 238000005201 scrubbing Methods 0.000 claims 1
- 238000007493 shaping process Methods 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000035943 smell Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US320368FREJP | 1981-11-12 | ||
| PCT/US1982/001576 WO1983001866A1 (en) | 1981-11-12 | 1982-11-08 | Merged platinum silicide fuse and schottky diode and method of manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59501139A true JPS59501139A (ja) | 1984-06-28 |
| JPH0586666B2 JPH0586666B2 (enExample) | 1993-12-13 |
Family
ID=22168347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58500094A Granted JPS59501139A (ja) | 1981-11-12 | 1982-11-08 | 融合された珪化白金ヒュ−ズおよびショットキダイオ−ドならびにその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59501139A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01157550A (ja) * | 1987-09-19 | 1989-06-20 | Texas Instr Deutschland Gmbh | 電気的にプログラム可能な集積回路の製法 |
-
1982
- 1982-11-08 JP JP58500094A patent/JPS59501139A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01157550A (ja) * | 1987-09-19 | 1989-06-20 | Texas Instr Deutschland Gmbh | 電気的にプログラム可能な集積回路の製法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0586666B2 (enExample) | 1993-12-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4176443A (en) | Method of connecting semiconductor structure to external circuits | |
| US4994410A (en) | Method for device metallization by forming a contact plug and interconnect using a silicide/nitride process | |
| US4518981A (en) | Merged platinum silicide fuse and Schottky diode and method of manufacture thereof | |
| US4209894A (en) | Fusible-link semiconductor memory | |
| US5963780A (en) | Method for detecting defect sizes in polysilicon and source-drain semiconductor devices | |
| US5466638A (en) | Method of manufacturing a metal interconnect with high resistance to electromigration | |
| US4109372A (en) | Method for making an insulated gate field effect transistor utilizing a silicon gate and silicide interconnection vias | |
| KR970707578A (ko) | 노출된 반도체 다이스를 테스트하기 위한 자기 제한 실리콘 베이스 상호접속부를 제조하는 방법(method for fabricating a self limting silcon based interconnect for testing bare semiconductor dice) | |
| JPH0563891B2 (enExample) | ||
| JPS61142739A (ja) | 半導体装置の製造方法 | |
| SE440293B (sv) | Schottky-diod och sett att framstella densamma | |
| US6001663A (en) | Apparatus for detecting defect sizes in polysilicon and source-drain semiconductor devices and method for making the same | |
| JPS5846192B2 (ja) | 接点構造体 | |
| KR950024268A (ko) | 반도체장치의 제조방법 | |
| JPS59501139A (ja) | 融合された珪化白金ヒュ−ズおよびショットキダイオ−ドならびにその製造方法 | |
| JPS6364057B2 (enExample) | ||
| JPS5898963A (ja) | 半導体装置 | |
| US5387548A (en) | Method of forming an etched ohmic contact | |
| JPS5898968A (ja) | 半導体装置 | |
| JPS586172A (ja) | 半導体装置 | |
| JP3372109B2 (ja) | 半導体装置 | |
| JP3017810B2 (ja) | 半導体装置の製造方法 | |
| JPH0236054B2 (enExample) | ||
| JPS60123026A (ja) | 半導体装置の製造方法 | |
| JPS6312154A (ja) | 半導体装置の製造方法 |