JPS59500120A - 窒化ガリウムを主体とした半導体発光素子およびその製造方法 - Google Patents

窒化ガリウムを主体とした半導体発光素子およびその製造方法

Info

Publication number
JPS59500120A
JPS59500120A JP82501062A JP50106282A JPS59500120A JP S59500120 A JPS59500120 A JP S59500120A JP 82501062 A JP82501062 A JP 82501062A JP 50106282 A JP50106282 A JP 50106282A JP S59500120 A JPS59500120 A JP S59500120A
Authority
JP
Japan
Prior art keywords
gallium nitride
layer
light emitting
emitting device
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP82501062A
Other languages
English (en)
Japanese (ja)
Inventor
バグラテイシヴイリ・ギヴイ・ダヴイドウイツチ
ドジヤネリドゼ・ルスダン・ビドジノフナ
ゾリコフ・ウラジミ−ル・ワシリエウイツチ
ミヘラシヴイリ・ヴイスサリオン・モルデホウイツチ
ペカル・イオシフ・エフイモウイツチ
チコヴアニ・ラフアエル・イラクリエウイツチ
チハイドゼ・マナナ・アカキエフナ
アコポヴア・スヴエトラ−ナ・ザルザンドフナ
ボグダノウイツチ・ヴイクト−ル・ボリソウイツチ
スヴエチニコフ・セルゲイ・ワシリエウイツチ
チヤルマカドゼ・レヴアズ・アレクサンドロウイツチ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of JPS59500120A publication Critical patent/JPS59500120A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies

Landscapes

  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Luminescent Compositions (AREA)
JP82501062A 1982-02-02 1982-02-02 窒化ガリウムを主体とした半導体発光素子およびその製造方法 Pending JPS59500120A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/SU1982/000002 WO1983002685A1 (fr) 1982-02-02 1982-02-02 Dispositif electrolumiscent a semi conducteur sur une base de nitrure gallium et son procede de fabrication

Publications (1)

Publication Number Publication Date
JPS59500120A true JPS59500120A (ja) 1984-01-19

Family

ID=21616762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP82501062A Pending JPS59500120A (ja) 1982-02-02 1982-02-02 窒化ガリウムを主体とした半導体発光素子およびその製造方法

Country Status (7)

Country Link
US (1) US4608581A (cg-RX-API-DMAC10.html)
JP (1) JPS59500120A (cg-RX-API-DMAC10.html)
CH (1) CH661153A5 (cg-RX-API-DMAC10.html)
DE (1) DE3249344T1 (cg-RX-API-DMAC10.html)
FR (1) FR2514566A1 (cg-RX-API-DMAC10.html)
GB (1) GB2123607B (cg-RX-API-DMAC10.html)
WO (1) WO1983002685A1 (cg-RX-API-DMAC10.html)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5218216A (en) * 1987-01-31 1993-06-08 Toyoda Gosei Co., Ltd. Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same
DE3852402T2 (de) * 1987-01-31 1995-05-04 Toyoda Gosei Kk Galliumnitridartige Halbleiterverbindung und daraus bestehende lichtemittierende Vorrichtung sowie Verfahren zu deren Herstellung.
US4911102A (en) * 1987-01-31 1990-03-27 Toyoda Gosei Co., Ltd. Process of vapor growth of gallium nitride and its apparatus
US4862471A (en) * 1988-04-22 1989-08-29 University Of Colorado Foundation, Inc. Semiconductor light emitting device
US5278433A (en) * 1990-02-28 1994-01-11 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer
US6362017B1 (en) 1990-02-28 2002-03-26 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
DE69126152T2 (de) 1990-02-28 1997-11-13 Japan Res Dev Corp Lichtemittierende Halbleitervorrichtung mit Gallium-Nitrid-Verbindung
US6830992B1 (en) 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
US5210051A (en) * 1990-03-27 1993-05-11 Cree Research, Inc. High efficiency light emitting diodes from bipolar gallium nitride
WO1992016966A1 (en) * 1991-03-18 1992-10-01 Boston University A method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films
US7235819B2 (en) * 1991-03-18 2007-06-26 The Trustees Of Boston University Semiconductor device having group III nitride buffer layer and growth layers
US5633192A (en) * 1991-03-18 1997-05-27 Boston University Method for epitaxially growing gallium nitride layers
EP0579897B1 (en) * 1992-07-23 2003-10-15 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
US5578839A (en) * 1992-11-20 1996-11-26 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
US5912498A (en) * 1997-10-10 1999-06-15 Lucent Technologies Inc. Article comprising an oxide layer on GAN
US5905275A (en) * 1996-06-17 1999-05-18 Kabushiki Kaisha Toshiba Gallium nitride compound semiconductor light-emitting device
JP3457511B2 (ja) * 1997-07-30 2003-10-20 株式会社東芝 半導体装置及びその製造方法
JP2001267555A (ja) * 2000-03-22 2001-09-28 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
AU2003285769A1 (en) * 2002-12-11 2004-06-30 Ammono Sp. Z O.O. A substrate for epitaxy and a method of preparing the same
US7592637B2 (en) * 2005-06-17 2009-09-22 Goldeneye, Inc. Light emitting diodes with reflective electrode and side electrode
US8154127B1 (en) 2007-07-30 2012-04-10 Hewlett-Packard Development Company, L.P. Optical device and method of making the same
KR100999747B1 (ko) * 2010-02-10 2010-12-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
US10353204B2 (en) 2016-10-31 2019-07-16 Tectus Corporation Femtoprojector optical systems
US10388641B2 (en) 2017-10-19 2019-08-20 Tectus Corporation Ultra-dense LED projector
US10768515B2 (en) 2017-12-12 2020-09-08 Tectus Corporation Method for manufacturing ultra-dense LED projector using thinned gallium nitride
US10673414B2 (en) 2018-02-05 2020-06-02 Tectus Corporation Adaptive tuning of a contact lens
US10649239B2 (en) 2018-05-30 2020-05-12 Tectus Corporation Eyeglasses with embedded femtoprojectors
US11721796B2 (en) 2021-03-29 2023-08-08 Tectus Corporation LED displays fabricated using hybrid bonding

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3683240A (en) * 1971-07-22 1972-08-08 Rca Corp ELECTROLUMINESCENT SEMICONDUCTOR DEVICE OF GaN
US3740622A (en) * 1972-07-10 1973-06-19 Rca Corp Electroluminescent semiconductor device for generating ultra violet radiation
US3783353A (en) * 1972-10-27 1974-01-01 Rca Corp Electroluminescent semiconductor device capable of emitting light of three different wavelengths
DE2738329A1 (de) * 1976-09-06 1978-03-09 Philips Nv Elektrolumineszierende galliumnitridhalbleiteranordnung und verfahren zu deren herstellung
FR2382103A2 (fr) * 1977-02-28 1978-09-22 Radiotechnique Compelec Dispositif semiconducteur electroluminescent au nitrure de gallium et procede pour l'obtenir
US4094704A (en) * 1977-05-11 1978-06-13 Milnes Arthur G Dual electrically insulated solar cells
US4396929A (en) * 1979-10-19 1983-08-02 Matsushita Electric Industrial Company, Ltd. Gallium nitride light-emitting element and method of manufacturing the same
JPS6055996B2 (ja) * 1979-12-05 1985-12-07 松下電器産業株式会社 電場発光半導体装置

Also Published As

Publication number Publication date
FR2514566B1 (cg-RX-API-DMAC10.html) 1984-12-07
GB2123607B (en) 1986-05-29
CH661153A5 (de) 1987-06-30
DE3249344T1 (de) 1984-01-12
GB8322975D0 (en) 1983-09-28
WO1983002685A1 (fr) 1983-08-04
FR2514566A1 (fr) 1983-04-15
US4608581A (en) 1986-08-26
GB2123607A (en) 1984-02-01

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