FR2514566A1 - Dispositif emetteur de lumiere semi-conducteur a base de nitrure de gallium et procede de fabrication dudit dispositif - Google Patents
Dispositif emetteur de lumiere semi-conducteur a base de nitrure de gallium et procede de fabrication dudit dispositif Download PDFInfo
- Publication number
- FR2514566A1 FR2514566A1 FR8119170A FR8119170A FR2514566A1 FR 2514566 A1 FR2514566 A1 FR 2514566A1 FR 8119170 A FR8119170 A FR 8119170A FR 8119170 A FR8119170 A FR 8119170A FR 2514566 A1 FR2514566 A1 FR 2514566A1
- Authority
- FR
- France
- Prior art keywords
- layer
- gallium nitride
- doped
- insulating material
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 83
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 83
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 239000000654 additive Substances 0.000 claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 11
- 238000001429 visible spectrum Methods 0.000 claims abstract description 11
- 239000000370 acceptor Substances 0.000 claims description 39
- 239000011810 insulating material Substances 0.000 claims description 32
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 239000003792 electrolyte Substances 0.000 claims description 5
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims description 4
- 238000004070 electrodeposition Methods 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 5
- 230000005693 optoelectronics Effects 0.000 abstract description 2
- 239000012774 insulation material Substances 0.000 abstract 1
- 230000005855 radiation Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000007038 hydrochlorination reaction Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000009828 non-uniform distribution Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- -1 nitride nitride Chemical class 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229940005657 pyrophosphoric acid Drugs 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/034—Manufacture or treatment of coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
- H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
Landscapes
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Luminescent Compositions (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/SU1982/000002 WO1983002685A1 (fr) | 1982-02-02 | 1982-02-02 | Dispositif electrolumiscent a semi conducteur sur une base de nitrure gallium et son procede de fabrication |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2514566A1 true FR2514566A1 (fr) | 1983-04-15 |
| FR2514566B1 FR2514566B1 (cg-RX-API-DMAC10.html) | 1984-12-07 |
Family
ID=21616762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8119170A Granted FR2514566A1 (fr) | 1982-02-02 | 1981-10-12 | Dispositif emetteur de lumiere semi-conducteur a base de nitrure de gallium et procede de fabrication dudit dispositif |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4608581A (cg-RX-API-DMAC10.html) |
| JP (1) | JPS59500120A (cg-RX-API-DMAC10.html) |
| CH (1) | CH661153A5 (cg-RX-API-DMAC10.html) |
| DE (1) | DE3249344T1 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2514566A1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB2123607B (cg-RX-API-DMAC10.html) |
| WO (1) | WO1983002685A1 (cg-RX-API-DMAC10.html) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5218216A (en) * | 1987-01-31 | 1993-06-08 | Toyoda Gosei Co., Ltd. | Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same |
| DE3852402T2 (de) * | 1987-01-31 | 1995-05-04 | Toyoda Gosei Kk | Galliumnitridartige Halbleiterverbindung und daraus bestehende lichtemittierende Vorrichtung sowie Verfahren zu deren Herstellung. |
| US4911102A (en) * | 1987-01-31 | 1990-03-27 | Toyoda Gosei Co., Ltd. | Process of vapor growth of gallium nitride and its apparatus |
| US4862471A (en) * | 1988-04-22 | 1989-08-29 | University Of Colorado Foundation, Inc. | Semiconductor light emitting device |
| US5278433A (en) * | 1990-02-28 | 1994-01-11 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer |
| US6362017B1 (en) | 1990-02-28 | 2002-03-26 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound |
| DE69126152T2 (de) | 1990-02-28 | 1997-11-13 | Japan Res Dev Corp | Lichtemittierende Halbleitervorrichtung mit Gallium-Nitrid-Verbindung |
| US6830992B1 (en) | 1990-02-28 | 2004-12-14 | Toyoda Gosei Co., Ltd. | Method for manufacturing a gallium nitride group compound semiconductor |
| US5210051A (en) * | 1990-03-27 | 1993-05-11 | Cree Research, Inc. | High efficiency light emitting diodes from bipolar gallium nitride |
| WO1992016966A1 (en) * | 1991-03-18 | 1992-10-01 | Boston University | A method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films |
| US7235819B2 (en) * | 1991-03-18 | 2007-06-26 | The Trustees Of Boston University | Semiconductor device having group III nitride buffer layer and growth layers |
| US5633192A (en) * | 1991-03-18 | 1997-05-27 | Boston University | Method for epitaxially growing gallium nitride layers |
| EP0579897B1 (en) * | 1992-07-23 | 2003-10-15 | Toyoda Gosei Co., Ltd. | Light-emitting device of gallium nitride compound semiconductor |
| US5578839A (en) * | 1992-11-20 | 1996-11-26 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
| US5912498A (en) * | 1997-10-10 | 1999-06-15 | Lucent Technologies Inc. | Article comprising an oxide layer on GAN |
| US5905275A (en) * | 1996-06-17 | 1999-05-18 | Kabushiki Kaisha Toshiba | Gallium nitride compound semiconductor light-emitting device |
| JP3457511B2 (ja) * | 1997-07-30 | 2003-10-20 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP2001267555A (ja) * | 2000-03-22 | 2001-09-28 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| AU2003285769A1 (en) * | 2002-12-11 | 2004-06-30 | Ammono Sp. Z O.O. | A substrate for epitaxy and a method of preparing the same |
| US7592637B2 (en) * | 2005-06-17 | 2009-09-22 | Goldeneye, Inc. | Light emitting diodes with reflective electrode and side electrode |
| US8154127B1 (en) | 2007-07-30 | 2012-04-10 | Hewlett-Packard Development Company, L.P. | Optical device and method of making the same |
| KR100999747B1 (ko) * | 2010-02-10 | 2010-12-08 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
| US10353204B2 (en) | 2016-10-31 | 2019-07-16 | Tectus Corporation | Femtoprojector optical systems |
| US10388641B2 (en) | 2017-10-19 | 2019-08-20 | Tectus Corporation | Ultra-dense LED projector |
| US10768515B2 (en) | 2017-12-12 | 2020-09-08 | Tectus Corporation | Method for manufacturing ultra-dense LED projector using thinned gallium nitride |
| US10673414B2 (en) | 2018-02-05 | 2020-06-02 | Tectus Corporation | Adaptive tuning of a contact lens |
| US10649239B2 (en) | 2018-05-30 | 2020-05-12 | Tectus Corporation | Eyeglasses with embedded femtoprojectors |
| US11721796B2 (en) | 2021-03-29 | 2023-08-08 | Tectus Corporation | LED displays fabricated using hybrid bonding |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3683240A (en) * | 1971-07-22 | 1972-08-08 | Rca Corp | ELECTROLUMINESCENT SEMICONDUCTOR DEVICE OF GaN |
| US3740622A (en) * | 1972-07-10 | 1973-06-19 | Rca Corp | Electroluminescent semiconductor device for generating ultra violet radiation |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3783353A (en) * | 1972-10-27 | 1974-01-01 | Rca Corp | Electroluminescent semiconductor device capable of emitting light of three different wavelengths |
| DE2738329A1 (de) * | 1976-09-06 | 1978-03-09 | Philips Nv | Elektrolumineszierende galliumnitridhalbleiteranordnung und verfahren zu deren herstellung |
| FR2382103A2 (fr) * | 1977-02-28 | 1978-09-22 | Radiotechnique Compelec | Dispositif semiconducteur electroluminescent au nitrure de gallium et procede pour l'obtenir |
| US4094704A (en) * | 1977-05-11 | 1978-06-13 | Milnes Arthur G | Dual electrically insulated solar cells |
| US4396929A (en) * | 1979-10-19 | 1983-08-02 | Matsushita Electric Industrial Company, Ltd. | Gallium nitride light-emitting element and method of manufacturing the same |
| JPS6055996B2 (ja) * | 1979-12-05 | 1985-12-07 | 松下電器産業株式会社 | 電場発光半導体装置 |
-
1981
- 1981-10-12 FR FR8119170A patent/FR2514566A1/fr active Granted
-
1982
- 1982-02-02 GB GB08322975A patent/GB2123607B/en not_active Expired
- 1982-02-02 CH CH5485/83A patent/CH661153A5/de not_active IP Right Cessation
- 1982-02-02 JP JP82501062A patent/JPS59500120A/ja active Pending
- 1982-02-02 DE DE823249344T patent/DE3249344T1/de not_active Withdrawn
- 1982-02-02 WO PCT/SU1982/000002 patent/WO1983002685A1/ru not_active Ceased
-
1983
- 1983-09-01 US US06/537,399 patent/US4608581A/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3683240A (en) * | 1971-07-22 | 1972-08-08 | Rca Corp | ELECTROLUMINESCENT SEMICONDUCTOR DEVICE OF GaN |
| US3740622A (en) * | 1972-07-10 | 1973-06-19 | Rca Corp | Electroluminescent semiconductor device for generating ultra violet radiation |
Non-Patent Citations (2)
| Title |
|---|
| EXBK/77 * |
| EXBK/78 * |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2514566B1 (cg-RX-API-DMAC10.html) | 1984-12-07 |
| GB2123607B (en) | 1986-05-29 |
| CH661153A5 (de) | 1987-06-30 |
| DE3249344T1 (de) | 1984-01-12 |
| GB8322975D0 (en) | 1983-09-28 |
| WO1983002685A1 (fr) | 1983-08-04 |
| JPS59500120A (ja) | 1984-01-19 |
| US4608581A (en) | 1986-08-26 |
| GB2123607A (en) | 1984-02-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |