JPS5944004A - Substrate for thin-film optical circuit - Google Patents
Substrate for thin-film optical circuitInfo
- Publication number
- JPS5944004A JPS5944004A JP15542882A JP15542882A JPS5944004A JP S5944004 A JPS5944004 A JP S5944004A JP 15542882 A JP15542882 A JP 15542882A JP 15542882 A JP15542882 A JP 15542882A JP S5944004 A JPS5944004 A JP S5944004A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- optical circuit
- propagation medium
- substrate
- medium layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/131—Integrated optical circuits characterised by the manufacturing method by using epitaxial growth
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
産業−1−の利用分野
本発明は、薄膜構造の光導波路を形り丈するだめの薄膜
光回路用基板を提供するものであるO従来例の構成とそ
の問題点
電子回路で電気を導くのに導線を使用する」二うに、ま
たマイクロ波回路では導波管を使用するよう(・乙光信
月処理システムあるいは光ICでは。DETAILED DESCRIPTION OF THE INVENTION Field of Application of Industry-1- The present invention provides a substrate for a thin film optical circuit that can form and lengthen an optical waveguide having a thin film structure.Constitution of a conventional example and its problems Just as conductive wires are used to conduct electricity in electronic circuits, waveguides are also used in microwave circuits (in optical processing systems or optical ICs).
光導波路が必要になる。An optical waveguide is required.
小形化光デバイスあるいは光ICに用いる光導波路とし
て、従来第1図に示すような、拡散型の導波路が用いら
れていた。この場合1例えは、・くルクのLiNb05
単結晶基板110表面に、Tiの拡散層からなる導波
路12を設ける○この種の光導波路は光の伝達のみなら
ず、各種光回路1例えは光デバイスを小型化、あるいは
集積化し5例えば光機能デバイスの形成あるいは光IC
の形成に用いる。このため、光回路用基板としては、電
気光学効果の大きい材料を用いていた0
しかしながら、バルク単結晶基板を用いた前記拡散型光
導波路では基板の材料が限定されるため。BACKGROUND OF THE INVENTION Conventionally, a diffused waveguide as shown in FIG. 1 has been used as an optical waveguide for miniaturized optical devices or optical ICs. In this case, one example is Kuruku's LiNb05
A waveguide 12 made of a Ti diffusion layer is provided on the surface of a single-crystal substrate 110. This type of optical waveguide is used not only to transmit light, but also to miniaturize or integrate various optical circuits (1, for example, optical devices). Formation of functional devices or optical IC
Used in the formation of For this reason, a material with a large electro-optic effect has been used as a substrate for an optical circuit. However, in the case of the diffusion type optical waveguide using a bulk single crystal substrate, the material of the substrate is limited.
各種デバイスとモノリシック化できず、さらに設計の自
由度が小さい。It cannot be monolithically integrated with various devices, and the degree of freedom in design is limited.
このようなバルク基板による光回路用基板の欠点を除去
するために、従来第2図に示すような薄膜型光導波路形
成用の薄膜光回路用基板が提案されでいる。すなわち、
四簿膜光回路用基板は1表面を光伝搬媒体層21で被覆
された基板22からなる多層構造を有し1通常、光伝搬
媒体層21に光が通過すべぐ、基板22の光の屈折率を
光伝搬媒体層21より小さくしている。基板22には例
えばサファイアを用い、各種半導体素子を形成して光導
波路とモノリシック化を可能とする0又光伝搬媒体21
を単結晶基板22上に単結晶成長させてこの単結晶薄膜
の電気光学効果あるいは音響光学効果等の緒特性を利用
して光を制御する薄膜光回路用基板も各種提案されてお
り、この構造の基板は広い応用が可能である。In order to eliminate such drawbacks of optical circuit boards using bulk substrates, a thin film optical circuit board for forming a thin film optical waveguide as shown in FIG. 2 has been proposed. That is,
A four-layer optical circuit board has a multilayer structure consisting of a substrate 22 whose surface is covered with a light propagation medium layer 21. Normally, the substrate 22 refracts light so that light can pass through the light propagation medium layer 21. The optical propagation medium layer 21 has a smaller coefficient than the optical propagation medium layer 21. The substrate 22 is made of sapphire, for example, and is an optical propagation medium 21 that can be formed into an optical waveguide and monolithic by forming various semiconductor elements thereon.
Various thin film optical circuit substrates have been proposed in which light is controlled by growing a single crystal on a single crystal substrate 22 and utilizing the electro-optic effect or acousto-optic effect of this single crystal thin film. The substrate has a wide range of applications.
ところで、このような薄膜光回路基板において導波路1
反射器、グレーティング等の光素子を形成する場合には
2例えば第3図のような単結晶薄膜31−1−に誘電体
又は金属等で形成し牟負荷薄膜32を、ドライエッチ/
りやフォトリングラフィ]ン術ろ用いて所望の形状に加
工している。又第4図に示したようにグレーティング4
0を基板11の表面に形成して反射器等を形成するが、
これH基板のエツチングが必要′となる。By the way, in such a thin film optical circuit board, the waveguide 1
When forming optical elements such as reflectors and gratings, a dielectric or metal is formed on a monocrystalline thin film 31-1-, for example, as shown in FIG.
It is processed into the desired shape using Riya's photo phosphorography technique. Also, as shown in Fig. 4, grating 4
0 is formed on the surface of the substrate 11 to form a reflector, etc.
This requires etching of the H substrate.
このようにこれら工程は単結晶薄膜の表面の歪み1表面
あらさも千ったって各条1Fのきびしい管理を必要とし
、困難なもので5歩留りも悪いO発明の目的
本発明の目的は、前記従来の薄膜光回路用基板の欠点を
除去し、薄膜光回路用基板上の光制御素子の形成を容易
にするものである0すなわち不発明は小型光デバイスあ
るいは光ICに適した薄膜光回路用基板の構造を与える
ことを目的、とする。As described above, these steps require strict control of the surface distortion, surface roughness, and individual striations of the single crystal thin film, and are difficult and result in poor yields. This invention eliminates the drawbacks of thin film optical circuit substrates and facilitates the formation of optical control elements on the thin film optical circuit substrates. The purpose is to give the structure of
発明の構成
すなわち1本発明の薄膜光回路用基板は単結晶基板と、
前記単結晶基板の表面に選択的に形成したアモルファス
薄膜と、前記単結晶基板表面と前記アモルファス薄膜の
表面を被うように形成した光伝搬媒体層とを有し、前記
アモルファス薄膜上の前記光伝搬媒体層の屈折率が前記
アモルファス薄膜が形成されていない領域上の前記光伝
搬媒体層の屈折率と異なることを特徴とするものである
。Structure of the invention: 1. The thin film optical circuit substrate of the present invention includes a single crystal substrate,
an amorphous thin film selectively formed on the surface of the single crystal substrate; and a light propagation medium layer formed to cover the surface of the single crystal substrate and the surface of the amorphous thin film; The refractive index of the propagation medium layer is different from the refractive index of the light propagation medium layer on the region where the amorphous thin film is not formed.
実施例の説明
以下1本発明の実施例における薄膜光回路用基板を説明
する。DESCRIPTION OF EMBODIMENTS A thin film optical circuit substrate according to an embodiment of the present invention will be described below.
第6図は本発明の一実施例にかかる薄膜光回路用基板の
要部構造を示す、すなわち単結晶基板220表面の一部
にアモルファス薄膜61を所望の形状に形成し、その後
これらの表面上に光伝搬媒体層5oを形成する。この場
合光は光伝搬媒体層6゜中を伝搬するように少なくとも
単結晶基板22の表面上に形成される光伝搬媒体層部分
50a。FIG. 6 shows the structure of a main part of a thin film optical circuit board according to an embodiment of the present invention. In other words, an amorphous thin film 61 is formed in a desired shape on a part of the surface of a single crystal substrate 220, and then on these surfaces. A light propagation medium layer 5o is formed thereon. In this case, the light propagation medium layer portion 50a is formed on at least the surface of the single crystal substrate 22 so that the light propagates through the light propagation medium layer 6°.
5Qbの屈折率は単結晶基板22の屈折率より大きくな
ければならない。このように、単結晶基板220表面に
選択的にアモルファス薄膜61を形成し、その後これら
の表面上に光伝搬媒体層6゜を形成すると、光伝搬媒体
層60は下地部分、すなわち単結晶部分6Qa 、50
1)上とアモルフ7スの部分50C上とで結晶成長の状
態が異なってA′−伝搬媒体層60の屈折率に差異が生
じる。すなわち、光伝搬媒体層60は、単結晶部分5Q
a。The refractive index of 5Qb must be greater than the refractive index of single crystal substrate 22. In this way, when the amorphous thin film 61 is selectively formed on the surface of the single crystal substrate 220 and then the light propagation medium layer 6° is formed on these surfaces, the light propagation medium layer 60 is formed in the underlying portion, that is, the single crystal portion 6Qa. , 50
1) The state of crystal growth differs between the top and the amorphous portion 50C, resulting in a difference in the refractive index of the A'-propagation medium layer 60. That is, the light propagation medium layer 60 has a single crystal portion 5Q.
a.
50b」−の領域がアモルファス部分60C上の領域J
: l:) 、 Ml折率が高くなり、単結晶部分60
a。50b”- is the region J on the amorphous portion 60C.
: l:), the Ml refractive index increases, and the single crystal part 60
a.
6Qb l−の領域が光導波路となる。The region of 6Qb l- becomes an optical waveguide.
本発明者ら1、この種の薄膜光回路用基板の各構成要素
の(」料にとして最適の構成材料があることを見い出し
、それに基つき、高性能外光回路用基板を実現すること
ができた。すなわちjf、 fli制御用の前記薄膜光
回路用基板において、」−述した基板22と光伝搬媒体
層50との結晶整合の問題、および屈折率の関係が同時
に満足されるような最適の構成材料が、単結晶基板と光
伝搬媒体層およびアモルファス薄膜61にあることを見
い出し、これにより特性の優れた薄膜光回路用基板が実
現されることを確認した。The present inventors 1 discovered that there are optimal constituent materials for each component of this type of thin-film optical circuit board, and based on this, it was possible to realize a high-performance external optical circuit board. In other words, in the thin film optical circuit substrate for controlling jf and fli, an optimum method is adopted in which the problem of crystal matching between the substrate 22 and the optical propagation medium layer 50 and the relationship between the refractive indexes described above are simultaneously satisfied. It was discovered that the constituent materials of the single crystal substrate, the optical propagation medium layer, and the amorphous thin film 61 were the same, and it was confirmed that a thin film optical circuit substrate with excellent characteristics could be realized.
第6図に示す本発明の実施例における薄膜光回路用基板
の構成とその実現の可能性について、構成材料を変えて
探索した結果1例えば光伝搬媒体層50として屈折率の
大きイZnO,P L Z T 、 PbTiOs 。The structure of the thin film optical circuit board according to the embodiment of the present invention shown in FIG. LZT, PbTiOs.
LiNbO5,LiTaO3,さらにはPLT、 PZ
T、 Zn5e、 ZnTeGd5. CdO,CdT
e などのII −v+化合物やGaP 、 InP
GaAlAs、 GaAs、 舌、 Ill −V族半
導体などが適しており基板22にはサファイア、スピネ
ル、 MgO。LiNbO5, LiTaO3, and even PLT, PZ
T, Zn5e, ZnTeGd5. CdO, CdT
II-v+ compounds such as e, GaP, InP
Suitable materials include GaAlAs, GaAs, Ill-V group semiconductors, and sapphire, spinel, and MgO for the substrate 22.
tl −7/レミナ5rT10s、 GaAs、 Si
、 Cre 等の単結晶板が適しておりアモルファス
薄膜51としては。tl-7/Remina 5rT10s, GaAs, Si
, Cre, etc. are suitable as the amorphous thin film 51.
石英ガラス、ソーダガラス、硼珪酸ガラス、シリカガラ
ス等が適していることを確認した。これら構成材料を用
いた薄膜光回路用基板は光rCなど。It was confirmed that quartz glass, soda glass, borosilicate glass, silica glass, etc. are suitable. Thin film optical circuit substrates using these constituent materials include optical rC.
集積化光回路の実現に有効である。It is effective in realizing integrated optical circuits.
以下さらに具体的に1本発明の一実施例にかかる薄膜光
回路用基板の形成手順と構成材料要素を説明する。まず
1例えばサファイアの単結晶板を基板にし、この上に1
例えは石英ガラスのアモルファス薄膜を厚さ0.277
m程度形成する。その際第6図のアモルファス薄膜61
のように平行した。Below, the formation procedure and constituent material elements of a thin film optical circuit board according to an embodiment of the present invention will be explained in more detail. First, 1, for example, a single crystal plate of sapphire is used as a substrate, and 1
For example, an amorphous thin film of quartz glass with a thickness of 0.277
Form about m. At that time, the amorphous thin film 61 shown in FIG.
parallel like.
幅員6μmで間隔6μm程度の帯状に形成する。これは
1通常のフォトリングラフィ技術により実現できる。ア
モルファス薄膜は例えば高周波スパッタリング蒸着に」
:り形成できる。It is formed into a band shape with a width of 6 μm and an interval of about 6 μm. This can be achieved by a conventional photolithography technique. Amorphous thin films can be deposited using high-frequency sputtering, for example.
: Can be formed.
次にこの石英ガラスにより形成されたアモルファス薄膜
帯を含めたサファイア基板」−にP L’Z T単結晶
薄膜を形成する。これは例えば基板温度を600〜s
o o ’CjfA度に土けて高周波スパッタリング蒸
着法によりPLZTをエピタキシャル成長貸せることに
より実現される。この時、サファイア基板の表面上には
PLZTの単結晶薄膜がエピタキシャル成長するが、ア
モルファス薄膜帯に」:リサフフイア基板表面が被われ
ている&13分にはPLZTは単結晶として成長せず、
多結晶、あるいはアモルファス状となっている。ここで
PLZTは光伝搬媒体であり、光を導波させることがで
きる。すなわちPLZT薄膜の単結晶部分5Qa。Next, a P L'Z T single crystal thin film is formed on the sapphire substrate including the amorphous thin film band formed from this quartz glass. This means, for example, that the substrate temperature is 600~s
This is achieved by epitaxially growing PLZT using a radio frequency sputtering deposition method. At this time, a single-crystal thin film of PLZT epitaxially grows on the surface of the sapphire substrate, but an amorphous thin film band forms.
It is polycrystalline or amorphous. Here, PLZT is an optical propagation medium and can guide light. That is, the single crystal portion 5Qa of the PLZT thin film.
sobと他の部分6ocとでは、結晶構造の違いにより
屈折率が異なる。通常は単結晶部分が屈折率が高くなる
。それ故に光をPLZT単結晶部分601)に導くなら
ば、この部分が光導波路となる。The refractive index differs between sob and the other portion 6oc due to the difference in crystal structure. Usually, the single crystal portion has a high refractive index. Therefore, if light is guided to the PLZT single crystal portion 601), this portion becomes an optical waveguide.
PLZT単結晶薄膜は電気光学効果の大きな材料であり
、又音響光学効果をも有し、さらに圧電性をも備えるの
で、この表面に各種電極を設けることにより多様な素子
が実現できる。The PLZT single crystal thin film is a material with a large electro-optic effect, and also has an acousto-optic effect, as well as piezoelectricity, so a variety of devices can be realized by providing various electrodes on its surface.
第6図は本発明の他の実施例の薄膜光回路用基板を示し
ており、第6図に示した考板と同様の構成により、光伝
搬媒体60中にアモルファス膜61を利用して周期的な
屈折率変化部分を形成し、光に対するグレーティングと
なしたものでありこの構造により導波光の反射1回折等
の作用をさせることが出来る。FIG. 6 shows a thin film optical circuit board according to another embodiment of the present invention, which has the same structure as the board shown in FIG. This structure forms a refractive index changing portion and serves as a grating for light, and this structure enables effects such as single reflection and diffraction of guided light.
第7図は本発明のさらに他の実施例における薄膜光回路
用基板を示しており、アモルファス薄膜70を同図のよ
うな曲線部をもつ形状に作成し、光伝搬媒体60中を伝
搬してアモルファス薄膜部分に入射する入射光71に対
してレンズとして作用するようにしたものである。FIG. 7 shows a thin film optical circuit board according to still another embodiment of the present invention, in which an amorphous thin film 70 is formed into a shape with a curved part as shown in the figure, and the light propagates through the light propagation medium 60. It is designed to act as a lens for incident light 71 that enters the amorphous thin film portion.
第7図ではアモルファス薄膜7oの表面上の光伝搬媒体
の屈折率が、他の部分より大きい場合を示しており、こ
の時は同図に示すように入射光は収束されて凸レンズと
して動作する場合を示した。Fig. 7 shows a case where the refractive index of the light propagation medium on the surface of the amorphous thin film 7o is larger than that of other parts, and in this case, as shown in the figure, the incident light is converged and it operates as a convex lens. showed that.
なお、上述の実施例の説明では光伝搬媒体の単結晶ノ1
1、板の表面部分の屈折率がアモルファス薄膜の表面部
分の屈折率よりも大きい場合を示したが。In addition, in the description of the above-mentioned embodiment, the single-crystal No. 1 of the optical propagation medium is used.
1. The case where the refractive index of the surface portion of the plate is larger than the refractive index of the surface portion of the amorphous thin film is shown.
アモルファス薄膜を金属で形成し、光伝搬媒体を高jl
A中で形成する時に同11;iに金属を光伝搬媒体中に
熱拡散すれば2通常その部分が、金属の拡散していない
部分J:りも屈折率が犬きくなる。これにより上述のj
J、−合と同様の動作をする光I制御素子が実現できる
。An amorphous thin film is formed of metal, and the light propagation medium is made of high jl.
If the metal is thermally diffused into the optical propagation medium when formed in A, the refractive index of that portion will normally be higher than that of the portion J: where the metal is not diffused. This allows the above j
It is possible to realize a light I control element that operates in the same way as in J and - cases.
さらに以」二の実施例では単結晶基板は単体で構成され
る場合について説明したが、基板としては単結晶薄膜が
その上に形成できるものであればよく、単結晶1)’を
体基板の表面に単結晶薄膜を形成したものを基板として
もよい。さらに上述の説明は。Furthermore, in the second embodiment, the case where the single crystal substrate is composed of a single body has been explained, but the substrate may be any substrate on which a single crystal thin film can be formed. The substrate may have a single crystal thin film formed on its surface. Furthermore, the above explanation.
アモルファス薄膜が一層で形成される場合について行な
ったが、もちろん二層あるいは多層で構成されてもよい
。The case where the amorphous thin film is formed in one layer has been described, but of course it may be formed in two layers or multiple layers.
発明の効果
以」二のような本発明の薄膜光回路用基板はアモルファ
ス薄膜の形状を土夫して1作成することにより簡単な工
程で各種光素子を実現でき、光デバイスの小型化、集積
化、光rcの集積化に有用であり、又多様な素子の実現
が[1f能である0Effects of the Invention The thin film optical circuit board of the present invention as described in 2. can be fabricated in the shape of an amorphous thin film to realize various optical devices in a simple process, and it is possible to miniaturize and integrate optical devices. It is useful for the integration of optical RC, and the realization of various elements [1f-capable 0
第1図は従来の光回路基板を示す図、第2図。
第3図は従来の薄膜光回路基板を示す図、第4図は従来
の光素子を示す図、第6図、第6図、第7図はそれぞれ
本発明の実施例における薄膜光回路用基板の構成を示す
図である。
22・・・・・・単結晶基板、21.31.60・・・
・・・光伝搬媒体層、61.61.70・・・・・・ア
モルファス薄膜。
代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図
2
第2図
I
第4図
0
第5図
Sθ
第6図FIG. 1 is a diagram showing a conventional optical circuit board, and FIG. 2 is a diagram showing a conventional optical circuit board. FIG. 3 is a diagram showing a conventional thin film optical circuit board, FIG. 4 is a diagram showing a conventional optical element, and FIGS. 6, 6, and 7 are thin film optical circuit boards according to embodiments of the present invention. FIG. 22... Single crystal substrate, 21.31.60...
...Light propagation medium layer, 61.61.70...Amorphous thin film. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2 Figure 2 I Figure 4 0 Figure 5 Sθ Figure 6
Claims (1)
形成したアモルファス薄膜と、前記単結晶基板表面と前
記アモルファス簿膜の表面を被うように形成した光伝搬
媒体層とを有し、前記アモルファス薄膜上の前記光伝搬
媒体層の屈折率が前記アモルファス薄膜が形成されてい
ない領域上の前記光伝搬媒体層の屈折率と異なることを
特徴とする薄膜光回路用基板。 (2)単結晶基板がサファイヤ。スピネル、MgO。 a −7ルミナ、 5rTiOs 、 GaAs 、
Ge 、 Siのいずれかにより構成されていることを
特徴とする特許請求の範囲第1項記載の薄膜光回路用基
板。 (3) アモルファス薄膜が石英ガラス、シリカガラ
ス、硼珪酸ガラス、ソーダガラスのうちの少なくとも一
種で構成されていることを特徴とする特許請求の範囲第
1項記載の薄膜光回路用基板。。 (4)光伝搬媒体層がP L Z T 、 PZT、P
LT、LiNbO3゜LiTaO5,PbTiOs、
BaTiO3,ZnO,Zn5e、 CdSのうちの少
なくとも一1中の誘電体薄膜で構成されていることを特
徴とする特許請求の範囲第1項記載の薄膜光回路用基板
。 (6) アモルファス薄膜がTi、 i、人Uのうち
のいずれかの金属により構成され、光伝搬媒体薄膜中に
前記金属が拡散されたことを特徴とする特許請求の範囲
第1項記載の薄膜光回路用基板0(6)光伝搬媒体層が
GaP、 GaInP、 GaAs、 GaAjAsの
III −V族化合物のうちの少なくとも一種の半導体
薄膜で構成されたことを特徴とする特許請求の範囲第1
項記載の薄膜光回路用基板。 (ア) アモルファス薄膜が帯伏に周期的に配置され
たことを特徴とする特許請求の範囲第1項記載の薄膜光
回路用基板。 (8) アモルファス薄膜が曲線部を含んだ形状に形
成されたことを特徴とする特許請求の範囲第1項記載の
薄膜光回路用基板。[Scope of Claims] (1) A single crystal substrate, an amorphous thin film selectively formed on the surface of the single crystal substrate, and a light film formed so as to cover the surface of the single crystal substrate and the surface of the amorphous thin film. a propagation medium layer, wherein the refractive index of the light propagation medium layer on the amorphous thin film is different from the refractive index of the light propagation medium layer on a region where the amorphous thin film is not formed. Circuit board. (2) The single crystal substrate is sapphire. Spinel, MgO. a-7 Lumina, 5rTiOs, GaAs,
The thin film optical circuit substrate according to claim 1, characterized in that it is made of either Ge or Si. (3) The thin film optical circuit substrate according to claim 1, wherein the amorphous thin film is made of at least one of quartz glass, silica glass, borosilicate glass, and soda glass. . (4) The optical propagation medium layer is P L Z T , PZT, P
LT, LiNbO3゜LiTaO5, PbTiOs,
The thin film optical circuit substrate according to claim 1, characterized in that the thin film optical circuit substrate is made of a dielectric thin film of at least one of BaTiO3, ZnO, Zn5e, and CdS. (6) The thin film according to claim 1, wherein the amorphous thin film is made of a metal selected from Ti, I, and U, and the metal is diffused into the light propagation medium thin film. Claim 1, wherein the optical circuit substrate 0 (6) optical propagation medium layer is composed of a semiconductor thin film of at least one of III-V group compounds such as GaP, GaInP, GaAs, and GaAjAs.
A thin film optical circuit board as described in 2. (a) The thin film optical circuit substrate according to claim 1, characterized in that the amorphous thin film is periodically arranged in a banded manner. (8) The thin film optical circuit substrate according to claim 1, wherein the amorphous thin film is formed in a shape including a curved portion.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15542882A JPS5944004A (en) | 1982-09-06 | 1982-09-06 | Substrate for thin-film optical circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15542882A JPS5944004A (en) | 1982-09-06 | 1982-09-06 | Substrate for thin-film optical circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5944004A true JPS5944004A (en) | 1984-03-12 |
JPH0526166B2 JPH0526166B2 (en) | 1993-04-15 |
Family
ID=15605792
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15542882A Granted JPS5944004A (en) | 1982-09-06 | 1982-09-06 | Substrate for thin-film optical circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5944004A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61156231A (en) * | 1984-12-28 | 1986-07-15 | Nec Corp | Circuit for mixing and integrating light |
JPS62245205A (en) * | 1986-04-17 | 1987-10-26 | Nec Corp | Thin film optical waveguide and its production |
JPS6319516A (en) * | 1986-07-14 | 1988-01-27 | Nippon Telegr & Teleph Corp <Ntt> | Optical ic type rotation sensor |
JPS63149517A (en) * | 1986-12-12 | 1988-06-22 | Nippon Telegr & Teleph Corp <Ntt> | Ring resonator type gyroscope |
JPS63249804A (en) * | 1987-04-06 | 1988-10-17 | Nippon Telegr & Teleph Corp <Ntt> | Quartz base optical waveguide film and its production |
US4793697A (en) * | 1986-08-04 | 1988-12-27 | Motorola, Inc. | PLZT shutter with minimized space charge degradation |
WO2003007440A3 (en) * | 2001-07-11 | 2003-12-18 | Motorola Inc | Integrated light source for frequency adjustment |
WO2022158529A1 (en) * | 2021-01-21 | 2022-07-28 | 大学共同利用機関法人自然科学研究機構 | Optical element, optical device, and method for producing optical element |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57163206A (en) * | 1981-03-31 | 1982-10-07 | Matsushita Electric Ind Co Ltd | Substrate for optical circuit |
-
1982
- 1982-09-06 JP JP15542882A patent/JPS5944004A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57163206A (en) * | 1981-03-31 | 1982-10-07 | Matsushita Electric Ind Co Ltd | Substrate for optical circuit |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61156231A (en) * | 1984-12-28 | 1986-07-15 | Nec Corp | Circuit for mixing and integrating light |
JPS62245205A (en) * | 1986-04-17 | 1987-10-26 | Nec Corp | Thin film optical waveguide and its production |
JPS6319516A (en) * | 1986-07-14 | 1988-01-27 | Nippon Telegr & Teleph Corp <Ntt> | Optical ic type rotation sensor |
US4793697A (en) * | 1986-08-04 | 1988-12-27 | Motorola, Inc. | PLZT shutter with minimized space charge degradation |
JPS63149517A (en) * | 1986-12-12 | 1988-06-22 | Nippon Telegr & Teleph Corp <Ntt> | Ring resonator type gyroscope |
JPS63249804A (en) * | 1987-04-06 | 1988-10-17 | Nippon Telegr & Teleph Corp <Ntt> | Quartz base optical waveguide film and its production |
WO2003007440A3 (en) * | 2001-07-11 | 2003-12-18 | Motorola Inc | Integrated light source for frequency adjustment |
WO2022158529A1 (en) * | 2021-01-21 | 2022-07-28 | 大学共同利用機関法人自然科学研究機構 | Optical element, optical device, and method for producing optical element |
Also Published As
Publication number | Publication date |
---|---|
JPH0526166B2 (en) | 1993-04-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4516049A (en) | Multi-layer acoustic surface wave device having minimal delay time temperature coefficient | |
US4354130A (en) | Surface acoustic wave device using a multi-layer substrate including α2 O3, SiO and ZnO | |
JPS5944004A (en) | Substrate for thin-film optical circuit | |
US6940208B2 (en) | Surface acoustic wave device | |
EP0595080A1 (en) | Low-loss strip-loaded optical waveguide | |
JPS59161014A (en) | Crystallization of semiconductor thin film | |
JPS6022105A (en) | Semiconductor device and manufacture thereof | |
JPS5930507A (en) | Substrate for optical circuit | |
JPS6112241B2 (en) | ||
JPS5917510A (en) | Optical waveguide | |
JPS58173704A (en) | Optical focusing device | |
EP3879336A1 (en) | Composite substrate for electro-optical element and production method therefor | |
US5364815A (en) | Crystal articles and method for forming the same | |
CA1339827C (en) | Crystal articles and method for forming the same | |
JPH0447805B2 (en) | ||
JPH0723927B2 (en) | Method of manufacturing optical waveguide | |
JPS58172619A (en) | Substrate for optical device | |
JPS5987411A (en) | Substrate for optical circuit | |
JP3780790B2 (en) | Surface acoustic wave device | |
JPS5974526A (en) | Optical isolator and its production | |
JPH0246406A (en) | Optical waveguide and its production | |
JP2592752B2 (en) | Semiconductor optical waveguide device and method of manufacturing the same | |
JPS58212124A (en) | Manufacture of single crystal thin film | |
JPS5930506A (en) | Substrate for optical device | |
JPS6318708A (en) | Frequency adjusting method for acoustic surface wave filter |