JPS61156231A - Circuit for mixing and integrating light - Google Patents

Abstract

PURPOSE:To give multiple functions and high performance to a light mixing and integrating circuit, by providing an epitaxial structure on an Si-single-crystal substrate, plural optoelectronic function elements which perform plural input-output of signals in a dielectric layer, and optical waveguides which connects the optoelectronic function elements with each other. CONSTITUTION:A time division multiple signal composed of four time slots transmitted by means of an optical fiber 10a is branched into to parts by optical branching 4a and the two parts are respectively made incident to a semiconductor laser amplifier array 5a and amplified. The two outputs are respectively made incident to 1X4 optical switches 4b and 4c. The 1X4 optical switch 4b acts as the writing switch to a bistable semiconductor laser array 5b which is an optical memory and causes the array to store transmitted signals at every bit. AX1 optical swtich 4d acts as the readout optical switch of the signal stored in the laser array 5b, merges time division multiple signals by replacing the time slots in accordance with control signals, and outputs the merged signals to an optical fiber 10b. On the other hand, the light made incident to the 1X4 optical switch 4c is demultiplexed and outputted to an OEIC 5c as four parallel signals. Optical information signals are outputted as electric signals of an appropriate form.

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an optical hybrid integrated circuit that integrates optical, electronic devices, and optical waveguides on one substrate to realize various functions.

(Prior Art and its Problems) In recent years, the demand for ultra-high-speed, large-capacity information processing devices for processing large amounts of information signals at high speed has been increasing.

Such information processing devices have conventionally been realized using highly integrated electrical integrated circuits (LSIs) whose basic units are logic gates. LSIs are becoming more dense, faster, and more efficient due to advances in semiconductor technology and packaging technology. However, in LSIs, the limits to high performance are beginning to be seen due to increased fan-out and interference between wirings due to higher integration. To solve these problems, 0BIC uses light to conduct wiring within IJI chips, between chips, and between devices.
The concept of 0EIC can be expected to integrate optical and electrical elements in a mixed manner and realize advanced functions. Furthermore, with the full-scale commercialization of optical communication systems in recent years, the application fields of light wave technology have expanded to include optical sensors, optical sensors,
In the field of optical switching equipment and the like, devices that process optical signals as they are in the form of light have been realized, although they are still in the experimental stage. In order to improve and stabilize the performance of such devices, optical integrated circuits are essential, and in the future, along with the aforementioned 0EIC, it will develop into realizing advanced functions that integrate light and electricity. It is expected that

The following two methods are conventionally known as methods for integrating optical and electrical elements to realize such advanced functions. The first method is to adopt a completely monolithic structure using compound semiconductor materials such as GaAs and InP, which can realize light emitting and light receiving elements and high-speed electron transport elements. However, this structure has the following problems. First, compound semiconductor materials are used for the aforementioned light-emitting and light-receiving elements.
Although it is an excellent material for electron transport elements, the electro-optic effect, acousto-optic effect, etc. necessary for light control and switching are very small, and practical devices cannot be obtained. Furthermore, when an optical waveguide for connecting each functional part is realized using a compound semiconductor material, there is generally a problem that light absorption increases. Furthermore, there is the problem that substrates made of GaAs, InP, etc. are expensive because their properties are not yet sufficiently stabilized compared to Si. On the other hand, the second conventionally known method utilizes so-called hetero-growth, in which different materials suitable for the desired functions are partially and selectively grown on a substrate such as Si or sapphire. be. There have been numerous reports regarding heterogeneous growth. For example, the magazine Javanica Journal of Applied Fixtures (Jap
anese Journal of Applied
Physics ) 22 volumes, 1983, 450 pages
~ Jeddah (Y, 8hinoda) published in L451
In a paper by et al., an LED was developed using a GaAs homojunction multilayer structure grown on a Si substrate via Ge/W/Sio.
There have been reports of cases where . Also the magazine Applied
Fixture Letters (Applied Physics
s Letters) Volume 45, 1984 Page 309
~ Windhorn ('r, H.) published in 311.

In the paper by Windhorn et al.
A is deposited on the i-substrate by molecular beam epitaxial (MBE) method.
It has been reported that a semiconductor laser was fabricated using an lGaAs-based double heterostructure and that pulsed oscillation at low temperatures was obtained. Rainbow, the magazine Applied Physics Letters (App
Lied l'bysics Letters) 4
Tsau (H
,Y.

'I'5aur) In the paper by et al.
GaAB.

It has been reported that GaAs was directly grown on MBB. However, in these reported examples, it is difficult to form low-loss optical waveguide materials, dielectric materials that are optical control element materials, and strong electric films, which are essential for realizing optical hybrid integrated circuits, by simply growing compound semiconductor materials on Si substrates. has not been attempted.

Therefore, it is difficult to realize an optical hybrid circuit with m functions using these conventional techniques.

(Objective of the Invention) The object of the present invention is to eliminate the above-mentioned problems and to allow functional elements made of materials suitable for the functions to be realized to be integrated on one substrate, thereby achieving extremely multifunctionality, high performance, and low cost. The object of the present invention is to provide an optical hybrid integrated circuit.

(Structure of the Invention) According to the present invention, a plurality of optoelectronic functional elements are formed on a single Si single crystal substrate in a semiconductor multilayer epitaxial structure and in a dielectric material tVr, and perform at least one input/output of a signal using an optical signal. The S! is used to connect the optical input and output between the optoelectronic functional element and the optoelectronic functional element. An optical hybrid integrated circuit is obtained which is characterized by comprising a plurality of optical waveguides formed on a single crystal substrate.

The present invention is an advanced application of the hetero-growth technique on a Si single crystal substrate proposed in Japanese Patent Application No. 59-17358 (inventor: Mikami) by the same applicant. In the same patent, 81 single-crystal substrate or Sion/S + substrate K Mg"-04, < H MgO/MgA1
．． O.

A substrate in which a dielectric layer having a darogskite crystal structure is formed via an epitaxial film has been proposed.

By using the heterogeneous growth technique, not only a dielectric with a verges guided crystal structure but also GaA can be grown on a single crystal 6i substrate.
Compound semiconductor device L such as lAs, InGaAsP system, etc.
It has been confirmed that dielectrics with other crystal structures, such as iNbO, can also be grown. GaA1. is an excellent material for light emitting, light receiving elements, and high speed electron transport devices. As.

InGaAsP, low-loss optical waveguides, optical switches using electro-optic effects, optical modulators and other materials, and LiNbO, which is superior to materials such as InGaAsP, are inexpensive and have stable quality single crystal S+.
Since it can be formed on a substrate, by utilizing this hetero-growth technique, it is possible to obtain a highly functional, high-performance, and inexpensive optical hybrid integrated circuit.

The present invention will be described in detail below with reference to Examples.

(Example) FIG. 1 shows an embodiment of the present invention.

In this embodiment, data and data of a 4-channel time division multiplexed optical signal are
This is an example of the realization of a stage stage. High resistance (100)
MgAl,0. Partially LiNb0 through epitaxial film 2, - epitaxial film 3
．． A film 4 and an AlGaAs multi-IH1 layer 5 are formed.

i, 1NbO, in the film 4 there is a channel optical waveguide (indicated by a straight line in the figure), an optical branch 4a using it, and a single-manpower 4-output (1X4) integrated directional coupler type optical switch.
Optical switches 4b, 4c, and 4×1 optical switch 4d are formed. Also, within the AlGaAs multilayer structure 5, there is a two-channel semiconductor laser amplifier array 5a1.
4-channel bistable semiconductor laser array 5b, IXd
An OEl'C5C is formed that receives the four optical outputs of the optical switch and outputs them as electrical outputs.

Here, the writing 1×4 optical switch 4b14 of this embodiment
A specific example of the 4×1 optical switch 4d and the bistable semiconductor laser array 5b will be described.

FIG. 3 shows a directional coupling type optical switch that can be used as an IX4 optical switch 4b14c for loading or a 4x1 optical switch 4d for reading. Strong electric crystal LiNb0
．． Three directional coupling type optical switches 41 formed on 40
, 42.43. LiNb0. The above-mentioned directional coupling type optical switch is obtained by creating an optical waveguide by diffusing Ti on the crystal and placing electrodes on the optical waveguide close to each other. Optical waveguide 44 for input,
When the optical waveguides 45, 46, 47, 48 are used for output, they can be used as IXd optical switches for writing, and when the input and output are reversed, they can be used as 4X1 optical switches for reading.

FIG. 4(a) is a sectional view showing a specific example of one element of the bistable semiconductor laser array 5b. The structure is almost the same as a commonly used current injection type semiconductor laser, for example, GaAlAs/GaAs 'p 1nGaAs.
This is a laser with a double heterojunction structure made of P/InP. However, it differs from a normal semiconductor laser in that the electrodes are not uniform and there are some parts into which current is not injected. Since the current non-injected region acts as a saturable absorber, the bistable semiconductor laser shown in FIG. 4(a) can have bistable characteristics in the injection current vs. optical output characteristic. In addition, instead of making the electrode non-uniform, it is possible to provide similar bistable characteristics by providing non-uniformity in the active layer, which is the light-emitting region, and providing a saturable absorption region in a part. I can do it. In these bistable semiconductor lasers, by appropriately selecting the injection type bleeding, bistable characteristics can also be obtained in the characteristics of the emitted light with respect to the externally injected light. Details of such bistable semiconductor lasers can be found in the literature Electronics Letters.
rs) Volume 17, 1981, 741 pages and Showa 5
Proceedings of the 7th National Conference of the Optical and Radio Division of the Institute of Electronics and Communication Engineers (
Part 2) No. 272 states this.

Figures 4(b), (C), and (d) are shown in Figure 4(a) c7.
) is a diagram for explaining the operation of a bistable semiconductor laser. FIG. 4(b) is a diagram showing the relationship between the injection current torque and the output light amount Pout when the incident light amount Pin=Q. That is, when the injection current i is increased from i, 1=i
3, the output light -jlPout increases rapidly, and conversely, when the injection current i is decreased from it, the output light iPoL4
$ exhibits a hysteresis characteristic that rapidly decreases at 1=ic, and has two stable points A and B for the output light tP and Pl at 1=ib. Figure 4 (C) is shown in Figure 4 (
In b), the amount of incident light P when the injection current is 1 = il)
FIG. 3 is a diagram showing the relationship between in and the amount of emitted light Pout. In other words, if the incident light fPjn is increased from 0 when the output light amount Pout = R is at the first stable point A, the output light amount is
Pout suddenly increases at Pin = Pa, and then when the incident light amount is decreased from Pin = Pt, the output light amount Pout hardly decreases and the output light i Pout =
Moving to the second stable point B of PI. Point A1B in FIG. 4(C) represents the same point as points A and B in FIG. 4(b), respectively. FIG. 4(d) is a table showing the operation of the bistable semiconductor laser with respect to the injection current i and the incident light Pin. When the injection current i is il), the incident light Pi
When n is 0, the bistable semiconductor laser is located at one of the two stable points A and B in FIG. 4(b) depending on the previously written data, and the output light amount P or P , to maintain. In FIG. 4(b), when the bistable semiconductor laser maintains one stable point B (emitted light tP,), the injection current i is injected once.

Then, when it is returned to il), the output light 11Pout becomes B-D-
The light changes in the order of A and thereafter maintains the other stable point A (output light amount). That is, the bistable semiconductor laser is reset. Also, in FIG. 4(C), the bistable semiconductor laser is at a stable point A (emitted light i, l). ), the output light amount Pout is A once the incident light amount is changed to Pi and is returned to O again.
-E-B, and after that the stable point B (outgoing light i p,
> is retained. That is, the bistable semiconductor laser is set. Furthermore, when the injection current i is 10, the incident light amount Pin is pt
In this case, the emitted light ii Pout shows a value P depending on the characteristics of the bistable semiconductor laser, but this light amount is not directly used in the present invention, so a description thereof will be omitted.

Next, the functions of this embodiment will be explained. optical fiber 10
Time division multiplexed signal (here multiplexed transmission pit-ray) consisting of 4 time slots transmitted by a 32 Mb/
s) is branched into two by the optical branch 4a, each of which enters the semiconductor laser amplifier array 5a and is amplified. The two outputs of the semiconductor radar antenna 7° array are incident on IX4 optical switches 4b and 4c, respectively, via optical waveguides. The 1×4 optical switch 4b functions as a write switch to the bistable semiconductor laser array 5b, which is an optical memory.
The transmission signal of four time slots is stored bit by bit in a bistable semiconductor laser array. 4x1 light switch 4d
serves as a source switch for the signals stored in the bistable semiconductor laser array 5b, and switches the times and slots of the time-division multiplexed signals in response to the 111I control signal, merges them, and outputs them to the optical fiber 10b. On the other hand, the light incident on the IX four-way switch 4cK is demultiplexed by this optical switch and output as four parallel signals to the 0EIC 5c.

The 0BIC5c consists of a PIN photodiode that receives and amplifies each information optical signal, an i;'g'r amplifier, and an electronic circuit that converts and shapes the duty cycle of each signal. Output as a signal. Finally, this data station has the function of exchanging and transmitting time-division multiplexed optical signals and the fs function of extracting necessary signals as electrical signals in this stage blind. FIG. 5, which further explains the time division exchange function in detail using a time chart, is a diagram for explaining the time division exchange function of the embodiment shown in FIG. 1. Figure 5 shows the IX4 optical switch 4b and the bistable semiconductor laser array 5 in Figure 1.
b. This is an extracted part of the 4X1 optical switch f tuner 4d.
341, 342, 343° 344, elements of bistable semiconductor laser fist array 5b 340, 350, 360
, 370.4 X The input and output optical waveguides of the one-way switch are expressed in order as 342, 352, 362°372.380.

FIG. 6 is a time chart particularly for explaining the time division exchange operation among the operations of the embodiment shown in FIG. Fifth
A time-division optical signal 100 is guided to the optical waveguide 310 shown in the figure. The optical signal 400 in FIG. 6 is a time-division optical signal io
A specific example will be shown in which information A, B, C, and D of o are each made into 1-bit NRZ signals. Here, lights no and pt shown in FIG. 4 are required as signals 0.1, respectively. In FIG. 5, bistable semiconductor lasers 340, 350, 36
A current having a current value ib shown in FIG. 4 is constantly injected into the terminals 0 and 370, respectively.

In FIG. 5, information A of the time-division optical signal 100 is written into the bistable semiconductor laser 340 as follows. That is, first, in the first period in the first time slot of the time-division optical signal 100, the bistable semiconductor laser 3
The injection current i to 40 is once 10 as shown in FIG. 6 410.
After reducing it to ib, it returns to ib.

As a result, the amount of light emitted from the bistable semiconductor laser 340 Pout
holds the light amount P, as shown in FIG. 6 440, and 1
In the second period following the first period in the first time slot of 00, the optical waveguide 3 is
10 is connected to the optical waveguide 341. FIG. 6 420 shows a control voltage supplied from the optical switch driving circuit 321 to the optical switch 320 in order to cause the optical switch 320 to perform the above connection operation. As a result, the bistable semiconductor laser 34
At the input end of 0, an optical signal is obtained by extracting only the first time slot of the time-division optical signal 400 using the control voltage 420, as shown in FIG. 6 430. As a result, when the incident light amount 430 is Pt, the output light amount 440 of the bistable semiconductor laser is set to P at the leading edge 431 of the incident light pulse 430, and the incident light amount 430
If is 0, b is retained. In this way, the bistable semiconductor laser 340 receives the information A of the time-division optical signal 100.
is written. Information B of the time-division optical signal ioo is obtained by controlling the currents injected into the optical switch 46 and the bistable semiconductor lasers 350, 360, and 370 in the same manner.

C and D are written into bistable semiconductor lasers 350, 360° and 370, respectively. The time-division optical signal 19 of information A written in the bistable semiconductor laser 340 in this way
Reading to 0 is performed as follows. That is, the optical waveguide 342 is connected to the optical waveguide 380 by the optical switch 330 in, for example, the fourth time slot of the time-division optical signal 190. 450 in FIG. 6 is the optical switch 33
0 to perform the above-mentioned connection operation, the optical switch 4d
As a result, the optical waveguide 380 has a control voltage supplied to the sixth
As shown in FIG. 460, an optical signal is obtained by extracting the emitted light 440 of the bistable semiconductor laser 340 using the control voltage 450. Similarly, the optical waveguide 380 is further provided with the first signal of the time-division optical signal 190. Second. Bistable semiconductor lasers 370, 360, 35 respectively in the third time slot
The information held at 0, C and B, are read out. The time-division optical signal 1 obtained in the optical waveguide 380 in this way
At 90, information A and D and information B and C of the time-division optical signal 100 are exchanged.

Regarding this type of time-division optical switching function, please refer to Proceedings of the 1981 Telecommunications Engineers of Japan Comprehensive National Conference, Volume 8, pp. 8-295.
It is described in detail in the paper by Suzuki et al. published in 296-296. In this example, the above-mentioned Isono is integrated on one Si single crystal substrate, and the optical waveguide and optical switch are made of LiN.
b0. , semiconductor race amplifier, bistable semiconductor laser, 0
Since the BIO is formed with an AlGaAs multilayer structure and materials suitable for each layer, very excellent characteristics can be expected. Furthermore, since Si is used as the substrate and has stable characteristics, it is very inexpensive.

Next, the manufacturing method of this embodiment will be explained. For convenience of explanation, the explanation will be made using a cross-sectional view (FIG. 2) at the boundary area between the LtNboa layer and the AI (jaAs) multilayer structure.

Patent application 1987-
136051, the vapor phase epitaxial method (
p MgA1. O, form an epitaxial film. That is, MgCl, AI as a reaction gas
AlC1,,C produced by reacting f-ICI gas with
□MgA I was produced by the following production reaction at a growth temperature of 950°C using iH gas and ion as a carrier gas.
* I grew Q2.

MgC1a +2AIC1s +40(J-+41-L
→MgAl-0-+4CO+8HC1 After forming the MgO epitaxial film 3 on the second page, pLiNb0. g4 was formed. Sputtering pressure is 4 Pascal and growth temperature is 500 ~
The test was carried out at 900°C. Sputtering on a normal insulating film only yields a simple alignment film, but Mgo/MgA
l t 047'EJ t In top-hole growth, a single crystal film is obtained during sputtering. The growth direction of the film can be controlled by the growth temperature, and here the growth plane was chosen to be perpendicular to the C-axis, which is advantageous for fabricating an optical switch.

FIG. 2(a) shows a cross section of a wafer that has undergone the above-described steps. A waveguide (20) having a desired pattern is formed on the surface of the thus formed LlNb05 layer 4 by ordinary Ti diffusion or proton ion exchange. Then T
Ar in an O2 atmosphere using i21 as an etching mask
By ion beam etching, LiNb0. was removed. At that time, etching is performed on the MgO film 3 or MgAl, 0. The etching time was controlled so that it stopped in the film 2. FIG. 2(b) shows a cross section of the wafer that has undergone the above steps. Next, p is applied to this Ueno 1 by molecular beam epitaxial MBE method.
n-1-GaAs buffer layer 30 (~1 μm),
n-AI (1,3Ga6.7As cladding layer 31 (~
2 μm), undoped A1 g, IGa 6. gAs active layer 32 (~0.2 tim), P-AI
6,3Ga 6,7AS cladding layer 33 (~1
μm), P0-○aAs cap layer 34 (~0
．． A conventional double heterostructure consisting of 5 μm) was formed. As dopants, Si was used for n-type and Be was used for p-type. Since the LiNbU for light removal and the Ti mask used for etching serve as a mask for selective growth during MBE growth, the pHd structure is MgAl, 0. Grows only on membranes. After that, by removing the Ti mask, the 1) H structure that can form L I L' JbOs waveguides, semiconductor lasers, bistable semiconductor lasers, etc. as shown in Figure 2 (C) is formed on one Si substrate. A formed Ueno 1 is obtained. Here, the span method was used as the L r NbO5 growth method, but Li, O, Nb, 0. V, 0. Liquid phase epitaxial (LPE) methods from mixed solutions can also be used.

Further, Lprv and metal organic method (MOVPE) can also be used to grow the AlGaAs multilayer structure, but MBE method is superior in terms of uniformity of controllable film.

The sea urchin shown in FIG. 2(C) is LiNb0. It is possible to precisely match the heights of the upper waveguide layer 20 and the active layer 32. Therefore, the magazine Japan's Journal Ome applied fixes (Japanese JourQlo)
f Applied Physics) Volume 22, 19
Asakou (K, A) published in 1983, pp. 1.653-L655.
(sakawa) The vertical laser cavity surface was etched by a dry etching device as shown in another paper.
If it is formed on the surface facing the bOs waveguide layer 20, the semiconductor laser output can be coupled to the waveguide with high efficiency. What is formed here is a completely normal l)H structure, so using this wafer, InGaA, s
It is also possible to fabricate a structure similar to a bistable semiconductor laser in which a P/InP-based semiconductor is proposed as a phase semiconductor. However, if the structure allows non-uniform current injection without the complicated structure as proposed in Japanese Patent Application No. 58-142922, the basic laser structure is a P-GaAs cap layer,
y34, P-AI6. It goes without saying that a simpler structure such as an open rib guide type laser structure in which the gGa 6,7As cladding layer 33 is processed into a striped rib structure in the cavity direction may also be used. As shown in Figure 1, fc
The 0g IC5 in the implementation ψ1 is usually composed of a PIN photodiode and a FET. Therefore, the layers and structure used to manufacture it are different from those of semiconductor lasers and the like.

However, since selective growth using a shadow mask is possible in the tV81N method, an AlGaAs multilayer structure for electronic circuits can be formed separately from a DH structure for forming a semiconductor laser. Figure 7 is from the magazine Electronics Letters, No. 19.
Volume, 1983, Wada (Q) published in Tei 1031-32
, Wada et al.) shows an example of multiplication of a diode and a FET when using a normal GaAs substrate, as described in the paper.

n+-G on a semi-insulating (S f ) GaAs substrate 50
aAs contact layer 51, n-GaAs light absorption layer 52
High-resistance AlGaAs layer 53 for 1 ant region, undoped GaAs buffer layer 54, n-GaAs PE
Using a wafer in which an 'l' channel layer is formed, a P diffusion region 56, a PET source 57, a gate 58, a drain 59, a photodiode P, and an n-side electrode 60 are formed by processes such as selective Zn diffusion and etching electrode type. ,6
1. Power supply 62 for photodiode and FET connection
The structure is formed by In this example, FET' is 1
Although only one FET is formed, it is also possible to form an electronic circuit including a large number of FETs by a similar process. The AlGaAs multilayer structure grown on an insulator as in the present invention has exactly the same effect as the multilayer structure grown on a semi-insulating substrate as shown in FIG. 7, and is suitable for manufacturing 90EIC. .

In this example, MgO/fMgAl, 0.0.
LiNb0. as a material that grows through the film. and AlG
Although aAs is considered, it goes without saying that the present invention is not limited to these materials. Materials for optical waveguides and light control elements include dielectrics with a perovskite crystal structure as proposed in Japanese Patent Application No. 5,971,7358, Y, 'Fe, 0. ．． Magnetic materials such as MgO,
8 (gAI, 0.0. It can be grown and used on a Si substrate via a film. In this case, the refractive index of the MgA1.0. film is about 1.7, and the refractive index of the above-mentioned dielectric is about 2. From above, the MgA1.0. film is used as an optical buffer layer,
It is also possible to form a leading waveguide using each dielectric as an optical waveguide layer. Furthermore, as the optical waveguide used in the present invention, one made of glass or an organic material with a buffer layer made of, for example, Sin, which has already been well-mentioned, may be used. In this example, the semiconductor material is AlGaAs based as an example, but 1 n
GaAs P/I n P system, Garb.

It is clear that the present invention can also be applied to other light-emitting/receiving element materials such as AIGaInP-based materials. In this embodiment, a data station for time-division optical signals is considered as a function to be realized by the optical hybrid integrated circuit according to the present invention, but it goes without saying that the present invention is not limited to this. Functional elements formed in the optical hybrid integrated circuit according to the present invention include active waveguide devices such as the semiconductor laser amplifier shown in the embodiments, and optical switches.

In addition to the 0EIC, in which only part of the optical modulator, optical deflector, and input/output section has original devices, and the rest are electronic devices, it is also possible to use pure electronic devices for control purposes, etc.

In the embodiment shown in FIG. 1, all optical signal connections within and outside the optical hybrid integrated circuit are made in a direction parallel to the substrate. However, when considering transmission and reception of optical signals between a large number of optical hybrid integrated circuits, it is also possible to consider a method in which optical hybrid integrated circuit boards are stacked in layers and optical signals are transmitted and received perpendicularly to each board. In this case, at least some of the light emitting and light receiving elements included in the optical hybrid integrated circuit must emit light in a direction perpendicular to the substrate or receive light incident perpendicularly to the substrate. This kind of luminescent confectionery is published in the magazine ``I.E.A.J.
IEEE Journal of QuantumEle
ctronics) Volume QE-11, 1975, Zh.
The grating-coupled semiconductor laser as described in the paper by I, Alferov et al., and the paper by Ishiyuki et al. published in IEICE Technical Report, Vol. There are surface-emitting lasers as shown, and these elements can be used, but it is currently more practical to use a grating coupler or a prism φ coupler formed in a waveguide. Due to its structure, the light-receiving element is normally capable of receiving light in a direction perpendicular to the substrate without any problems.

(Effects of the Invention) As explained in detail above, according to the present invention, functional elements made of materials suitable for the functions to be realized can be integrated on one substrate, resulting in extremely multifunctionality, high performance, and low cost. This will greatly contribute to the realization of a variety of advanced optical and electrical processing devices by providing an optical hybrid output circuit.

[Brief explanation of the drawing]

FIG. 1 shows an embodiment of a hybrid integrated circuit according to the present invention,
Figure 2 is a diagram for explaining the manufacturing process of the optical hybrid integrated circuit according to the present invention, and Figures 3, 4, and 7 are diagrams showing the functional elements to be integrated into the optical hybrid integrated circuit according to the present invention. 5 and 6 are diagrams for explaining the operation of the embodiment shown in FIG. M1. In the figure, 1 is a Si substrate, 2 and 3 are insulating films, 4 and 40 are dielectric materials, and 5, 30, 31, 32.33, 34, 50.51
゜52.53.54, 55.56 are semiconductors, 4a tI
′i, jt branch. 4b, 4c, 4L41, 42.43 are original switches, 5a
is 47.48,310,341,351,361,37
1,342°352.362,372,380 are waveguides, 340,350°360, 370 are bistable cow conductor lasers, 100,400°411,410,420,43
0,431,440,450°460.190 is a signal,
57, 58, 59, 60, 61.62 are electrodes. Figure 1 5a: Semiconductor laser amplifier array 5b: Bistable semiconductor laser array 5c: 0EIC 10a, 10b optical fibers Figure 2 (a) Figure 3 4 (a) ==;〉 out (d)

Claims (2)

[Claims] (1) A compound semiconductor multilayer epitaxial structure and a dielectric layer partially formed on a Si single crystal substrate via an MgAl_2O_4 epitaxial film or an NgO epitaxial film on the MgAl_2O_4 epitaxial film, the epitaxial structure, the dielectric layer a plurality of optoelectronic functional elements that perform at least one of the plurality of inputs and outputs of signals formed in the body layer as an optical signal, and the Si single crystal substrate for connecting optical inputs and outputs between the optoelectronic functional elements; An optical hybrid integrated circuit comprising a plurality of optical waveguides formed in. (2) The optical hybrid integrated circuit according to claim 1, further comprising means for extracting an optical signal perpendicularly to the substrate and means for receiving signal light incident perpendicularly to the substrate.