JPH0246406A - Optical waveguide and its production - Google Patents
Optical waveguide and its productionInfo
- Publication number
- JPH0246406A JPH0246406A JP19650088A JP19650088A JPH0246406A JP H0246406 A JPH0246406 A JP H0246406A JP 19650088 A JP19650088 A JP 19650088A JP 19650088 A JP19650088 A JP 19650088A JP H0246406 A JPH0246406 A JP H0246406A
- Authority
- JP
- Japan
- Prior art keywords
- waveguide
- layer
- mask
- waveguide layer
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 27
- 238000005253 cladding Methods 0.000 claims description 26
- 150000001875 compounds Chemical class 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000010409 thin film Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 20
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 18
- 239000002994 raw material Substances 0.000 abstract description 12
- 229910052681 coesite Inorganic materials 0.000 abstract description 10
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 10
- 239000000377 silicon dioxide Substances 0.000 abstract description 10
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 10
- 229910052682 stishovite Inorganic materials 0.000 abstract description 10
- 229910052905 tridymite Inorganic materials 0.000 abstract description 10
- 238000005530 etching Methods 0.000 abstract description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract description 5
- 229910052711 selenium Inorganic materials 0.000 abstract description 5
- 229910052725 zinc Inorganic materials 0.000 abstract description 5
- 238000002230 thermal chemical vapour deposition Methods 0.000 abstract description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 abstract 3
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 17
- 239000010408 film Substances 0.000 description 16
- 229910020489 SiO3 Inorganic materials 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 4
- 150000002894 organic compounds Chemical class 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001741 metal-organic molecular beam epitaxy Methods 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910007709 ZnTe Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000003955 hot wall epitaxy Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、光集積回路或いは光電子集積回路等の構成要
素として用いられるＩＩ −ＶＩ族化合物半導体の光導
波路に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical waveguide made of a II-VI compound semiconductor used as a component of an optical integrated circuit or an optoelectronic integrated circuit.
［従来の技術］
従来報告されているＩＩ〜ＶＩ族化合物半導体の光導波
路は、トシャ・ヨコガワ、アプライド・フィジックス・
レター（Ｔｏｓｈｉｙａ Ｙｏｋｏｇａｗａ、Ａｐｐｌ
Ｐｈｙｓ、 Ｌｅｆｆ） Ｖｏｌ、 ５２、Ｎｏ、２、
Ｆ１９８８） １２０に記載されている構造のものであ
る。第５図は該光導波路の概略図であり、６はＧａＡＳ
基板、７はＺｎＳより成るクラッド層、８はＺｎ５ｅ−
ＺｎＳ超格子より成る導波路層、９はＳｉＯ２のストラ
イブである。この光導波路はＳ ｉ ０２のストライブ
幅が６μｍ、導波路層の厚さが０４〜】２４Ｉ１ｍの時
、波長が０．６３３１１ｍの光に対してシングルモード
となり、又伝搬損失はｏ、７１ｄＢ／ｃｍであると報告
されている。[Prior Art] The conventionally reported optical waveguides of group II to VI compound semiconductors are those of Tosha Yokogawa, Applied Physics;
Letter (Toshiya Yokogawa, Appl
Phys, Leff) Vol. 52, No. 2,
F1988) 120. FIG. 5 is a schematic diagram of the optical waveguide, and 6 is a GaAS
Substrate, 7 is a cladding layer made of ZnS, 8 is Zn5e-
The waveguide layer 9 is made of a ZnS superlattice, and 9 is a stripe of SiO2. This optical waveguide becomes a single mode for light with a wavelength of 0.63311 m when the stripe width of S i 02 is 6 μm and the thickness of the waveguide layer is 04~]24I1 m, and the propagation loss is o, 71 dB/ It is reported that cm.
〔発明が解決しようとする課題）
しかし、前述の従来技術の光導波路は導波路層上にスト
ライブ状のＳｉＯ□を形成することにより、界面と平行
な方向の実効的な屈折率段差をつけている為、この方向
における導波路領域とクラッド域との屈折率の段差が小
さく光の閉じ込めが有効に行われないという課題を有す
る。そこで本発明はこの様な課題を解決するもので、そ
の目的とするところは光を有効に閉し込める構造のＩＩ
ＶＩ族化合物半導体の光導波路及びその製造方法を提供
するところにある。[Problems to be Solved by the Invention] However, the optical waveguide of the prior art described above creates an effective refractive index step in the direction parallel to the interface by forming striped SiO□ on the waveguide layer. Therefore, there is a problem that the difference in refractive index between the waveguide region and the cladding region in this direction is small and light cannot be effectively confined. Therefore, the present invention is intended to solve such problems, and its purpose is to create a II structure that can effectively confine light.
An object of the present invention is to provide a group VI compound semiconductor optical waveguide and a method for manufacturing the same.
［課題を解決するための手段１
本発明の光導波路は、基板上にＩＩ −ＶＩ族化合物半
導体より成るクラッド層と該クラッド層よりも大きな屈
折率を有するＩＴ−ＶＩ族化合物半導体より成る導波路
層を積層した構造を有し、かつ少なくとも導波路層がリ
ッジ型てあり、がっ導波路層は誘電体薄膜により完全に
覆われていることを特徴とする。さらに、該光導波路の
第１の製造方法は、基板上にクラッド層を形成する工程
と、該クラッド層上にマスクを形成する工程と、該マス
クを用いて導波路層をクララ１へ層上の一部に選択的に
形成する工程と、マスクを除去する工程と、該導波路層
の全面に誘電体薄月莫を形成する工程を含むことを特徴
とする。又第２の製造方法は、基板上にマスクを形成す
る工程と、該マスクを用いてクラッド層と導波路層を基
板上の一部に選択的に形成する工程と、マスクを除去す
る工程と、該導波層の全面に誘電体薄膜を形成する工程
を含もことを特徴とする。[Means for Solving the Problems 1] The optical waveguide of the present invention includes a cladding layer made of a II-VI group compound semiconductor on a substrate and a waveguide made of an IT-VI group compound semiconductor having a larger refractive index than the cladding layer. It has a structure in which layers are laminated, and at least the waveguide layer is ridge-shaped, and the waveguide layer is completely covered with a dielectric thin film. Further, the first method for manufacturing the optical waveguide includes a step of forming a cladding layer on the substrate, a step of forming a mask on the cladding layer, and a layering of the waveguide layer onto the Clara 1 using the mask. , a step of removing the mask, and a step of forming a thin dielectric layer over the entire surface of the waveguide layer. The second manufacturing method includes a step of forming a mask on a substrate, a step of selectively forming a cladding layer and a waveguide layer on a part of the substrate using the mask, and a step of removing the mask. The method is characterized in that it includes a step of forming a dielectric thin film on the entire surface of the waveguide layer.
［実施例１１
第１図は本発明の実施例におＬｄるＩＩ −ＶＩ族化合
物半導体の光導波路の概略断面図である。１はＧａＡｓ
基板、２はＺｎＳより成るクラッド層、３はＺｎ５ｅよ
り成る導波路層、４は５１０２膜である。この構造にお
いて、界面と垂直な方向は導波路層の屈折率が２．３４
に対して下部のクラッド層の屈折率が２．３１及び上部
は屈折率が１４６のＳｉＯ３膜である為屈折率の段差は
十分に大きく、又界面と平行な方向においても屈折率が
２３４の導波路層を屈折率が１４６のＳ１０□膜で挟ん
だ構造の為屈折率の段差は十分に大きい。この様に導波
路層とその周囲との屈折率の段差が大きい為、導波路層
への光の閉し込めが有効に行われる。０．６３２８＋１
ｍの波長の光を用いて該光導波路の伝搬損失を測定した
ところ０５ ｄＢ／ｃｍ以下と低損失なものであった。[Example 11] FIG. 1 is a schematic cross-sectional view of an optical waveguide made of a II-VI group compound semiconductor according to an example of the present invention. 1 is GaAs
2 is a cladding layer made of ZnS, 3 is a waveguide layer made of Zn5e, and 4 is a 5102 film. In this structure, the refractive index of the waveguide layer is 2.34 in the direction perpendicular to the interface.
On the other hand, since the lower cladding layer has a refractive index of 2.31 and the upper part is a SiO3 film with a refractive index of 146, the difference in refractive index is sufficiently large. Since the waveguide layer is sandwiched between S10□ films having a refractive index of 146, the difference in refractive index is sufficiently large. Since the difference in refractive index between the waveguide layer and its surroundings is large in this way, light is effectively confined in the waveguide layer. 0.6328+1
When the propagation loss of the optical waveguide was measured using light with a wavelength of m, it was found to be as low as 05 dB/cm or less.
これは、前述した様に光が導波路層内に有効に閉し込め
られている為、ＧａＡｓ基板中への光のしみ出しが小さ
（ＧａＡｓ基板内での吸収が小さいことを示す。又、後
述する様に光導波路の製造工程において導波路層のエツ
チングをする必要がない為、導波路層の表面が平坦であ
り散乱損が小さいことも低損失の一因である。ＺｎＳ及
びＺｎ５ｅ等のＩＩＶＩ族化合物半導体は、基板のＧａ
Ａｓと同し閃亜鉛鉱型の結晶構造である為ＧａＡｓ基板
上に容易にエピタキシャル成長できる。又、発光素子及
び受光素子等の光デバイスや電子デバイスもＧａＡｓ基
板上に作製することができる為、本発明の光導波路はこ
れらのデバイスを集積化した光集積回路或いは光電子集
積回路等に容易に応用することができる。又基板として
ＧａＡｓ以外にもＩｎＰ等の１ｌｌ−Ｖ族生導体基板も
用いることができる。又導波路層及びクララ）へ層の材
料として表１に示した様なＴＩ −ＶＩ族化合物半導体
を用いることもてきる。This is because, as mentioned above, the light is effectively confined within the waveguide layer, so the seepage of light into the GaAs substrate is small (indicating that absorption within the GaAs substrate is small. As will be described later, it is not necessary to etch the waveguide layer in the manufacturing process of the optical waveguide, so the surface of the waveguide layer is flat and the scattering loss is small, which is one of the reasons for the low loss. Group III compound semiconductors have a Ga substrate.
Since it has the same zincblende crystal structure as As, it can be easily epitaxially grown on a GaAs substrate. Furthermore, since optical devices and electronic devices such as light emitting elements and light receiving elements can be fabricated on GaAs substrates, the optical waveguide of the present invention can be easily integrated into optical integrated circuits or optoelectronic integrated circuits that integrate these devices. It can be applied. In addition to GaAs, a 111-V group raw conductor substrate such as InP can also be used as the substrate. Further, TI-VI group compound semiconductors as shown in Table 1 can be used as materials for the waveguide layer and the Clara layer.
表］
又本発明の光導波路においてはＺｎ５ｅの導波路層は５
１０２膜に完全に覆われて保護されてぃる為、外界の影
響を受けることなく長期間安定な動作が得られ信頼性が
高い。導波路層の保護膜としてＳｉＯ□以外にもＳｉ３
Ｎ４又はＡｌ２Ｏ３等の他の誘電体薄膜を用いることが
できる。Table] Furthermore, in the optical waveguide of the present invention, the Zn5e waveguide layer is 5
Since it is completely covered and protected by the 102 film, it can operate stably for a long period of time without being affected by the outside world, and is highly reliable. In addition to SiO□, Si3 can be used as a protective film for the waveguide layer.
Other dielectric thin films such as N4 or Al2O3 can be used.
以下に本発明の光導波路の製造方法を第３図（ａ）〜（
ｄ）を用いて説明する。初めに、ＧａＡｓ基板上に下部
のクラッド層となるＺｎＳ層をＭＯＣＶＤ法によりエピ
タキシャル成長し、次に熱ＣＶＤ法等によりマスク５の
ＳｉＯ□を堆積する。この状態が第３図（ａ）である。The method for manufacturing an optical waveguide of the present invention is described below in Figures 3(a) to 3(a).
This will be explained using d). First, a ZnS layer to be a lower cladding layer is epitaxially grown on a GaAs substrate by MOCVD, and then SiO□ of mask 5 is deposited by thermal CVD or the like. This state is shown in FIG. 3(a).
ＺｎＳのエピタキシャル成長方法ぽは、他にＭＢＥ法、
ＭＯＭＢＥ法或いはホットウォールエピタキシー法等が
有り、これ等の方法によってもＺｎＳのクラッド層を同
様に形成することが可能である。次にフォトリングラフ
ィ技術によりＳ ｉ ０２のパターニングを行う。この
場合導波路層を形成する部分の５ｉｎ２膜をエツチング
により除去する。この状態が第３図（ｂ）である。パタ
ーニングされたＳｉＯ３をマスクとして選択エピタキシ
ャル成長によりＺｎ５ｅの導波路層を形成し第３図（ｃ
）の様にする。Ｚｎ５ｅの選択エピタキシャル成長は以
下の様な方法で行うことができる。原料としてＺｎ及び
Ｓｅの有機化合物を用い、成長圧力を１００Ｔｏｒｒ以
下、成長温度を４００℃以上７００℃以下、ＶＩ族原料
とＩＩ族原料の原料供給モル比を６以下の条件の下で減
圧ＭＯＣＶＤ法或いはＭＯＭＢＥ法により行う。導波路
層であるＺｎ５ｅを形成した後、沸酸系のエッチャント
によりＳｉＯ２を除去し、導波路層であるＺｎ５ｅの全
面を覆う様にＳｉＯ□膜を形成し第３図（ｄ）の様に光
導波路が完成する。上記の例ではマスクとしてＳ ｉ
Ｏ２を用いた例について示したが、Ｓ ｉ ３Ｎ４等の
他の誘電体薄膜或いはＷ等も同様に用いることができる
。又、ＣｄＳ、ＺｎＴｅ、ＣｄＳｅ等の選択エピタキシ
ャル成長する場合、Ｃｄ、Ｓ、Ｚｎ、Ｔｅ、Ｓｅのそれ
ぞれの有機化合物を原料として用いる。又導波路層を保
護膜と６のマスクの材質が同一の場合、マスクを除去す
る工程を省（ことも可能である。ZnS epitaxial growth methods include MBE method,
There are MOMBE method, hot wall epitaxy method, etc., and it is possible to form a ZnS cladding layer in the same way by these methods as well. Next, patterning of S i 02 is performed using photolithography technology. In this case, the portion of the 5in2 film where the waveguide layer will be formed is removed by etching. This state is shown in FIG. 3(b). A waveguide layer of Zn5e was formed by selective epitaxial growth using the patterned SiO3 as a mask, as shown in Fig. 3(c).
). Selective epitaxial growth of Zn5e can be performed by the following method. Low-pressure MOCVD method using organic compounds of Zn and Se as raw materials, growth pressure of 100 Torr or less, growth temperature of 400°C to 700°C, and raw material supply molar ratio of Group VI raw material and Group II raw material of 6 or less. Alternatively, the MOMBE method may be used. After forming the Zn5e waveguide layer, SiO2 is removed using a hydrochloric acid-based etchant, and a SiO□ film is formed to cover the entire surface of the Zn5e waveguide layer. The wave path is completed. In the above example, S i
Although an example using O2 has been shown, other dielectric thin films such as Si3N4, W, etc. can be used in the same way. Further, in the case of selective epitaxial growth of CdS, ZnTe, CdSe, etc., respective organic compounds of Cd, S, Zn, Te, and Se are used as raw materials. Furthermore, if the waveguide layer is made of the same material as the protective film and the mask 6, the step of removing the mask can be omitted.
〔実施例２１
第１図は本発明の実施例におけるＩＩ −ＶＩ族化合物
半導体の光導波路の概略断面図である。１はＧａＡｓ基
板、２はＺｎＳより成るクラッド層、３はＺｎ５ｅより
成る導波路層、４はＳ ｉ Ｏ２膜である。この構造に
おいて、界面と垂直な方向は導波路層の屈折率が２．３
４に対して下部のクラッド層の屈折率が２．３１及び上
部は屈折率が１４６のＳｉＯ□膜である為屈折率の段差
は十分に大きく、又界面と平行な方向においても屈折率
が２．３４の導波路層を屈折率が１４６のＳｉＯ２膜で
挟んだ構造の為屈折率の段差は十分に大きい。この様に
導波路層とその周囲との屈折率の段差が大きい為、導波
路層への光の閉じ込めが有効に行われる。０．６３２８
ｕｍの波長の光を用いて該光導波路の伝搬損失を測定し
たところ０ 、５ ｄＢ／ｃｍ以下と低損失なものであ
った。これは、前述した様に光が導波路層内に有効に閉
じ込められている為、ＧａＡｓ基板中への光のしみ出し
が小さ（ＧａＡｓ基板内での吸収が小さいことを示す。[Example 21] FIG. 1 is a schematic cross-sectional view of an optical waveguide made of a II-VI group compound semiconductor in an example of the present invention. 1 is a GaAs substrate, 2 is a cladding layer made of ZnS, 3 is a waveguide layer made of Zn5e, and 4 is a SiO2 film. In this structure, the refractive index of the waveguide layer is 2.3 in the direction perpendicular to the interface.
4, the lower cladding layer has a refractive index of 2.31 and the upper part is a SiO□ film with a refractive index of 146, so the difference in refractive index is sufficiently large, and even in the direction parallel to the interface, the refractive index is 2.31. Since it has a structure in which a waveguide layer with a diameter of .34 is sandwiched between SiO2 films with a refractive index of 146, the difference in refractive index is sufficiently large. Since the difference in refractive index between the waveguide layer and its surroundings is large in this way, light is effectively confined in the waveguide layer. 0.6328
When the propagation loss of the optical waveguide was measured using light with a wavelength of um, it was found to be as low as 0.5 dB/cm or less. This is because, as described above, the light is effectively confined within the waveguide layer, so that the light seeps into the GaAs substrate (indicates that absorption within the GaAs substrate is small).
又、後述する様に先導波路の製造工程において導波路層
のエツチングをする必要がない為、導波路層の表面が平
坦であり散乱損が小さいことも低損失の一因である。又
、クラッド層のＺｎＳと導波路層のＺｎ５ｅは同一炉内
で連続して形成できる為、これらの界面における不純物
濃度或いは欠陥濃度が低くなる。これにより導波路層の
Ｚｎ５ｅ中の不純物或いは欠陥濃度が低くなる。この様
に本発明の構造の光導波路においては、導波路層及び導
波路層とクラッド層との界面における不純物或いは欠陥
濃度が低くなる為、該不純物或いは欠陥が形成する深い
準位に関する光吸収が減少し低損失の光導波路となる。Further, as will be described later, since there is no need to etch the waveguide layer in the process of manufacturing the guide waveguide, the surface of the waveguide layer is flat and the scattering loss is small, which is another factor contributing to the low loss. Furthermore, since ZnS for the cladding layer and Zn5e for the waveguide layer can be formed successively in the same furnace, the impurity concentration or defect concentration at their interface becomes low. This reduces the concentration of impurities or defects in Zn5e of the waveguide layer. As described above, in the optical waveguide having the structure of the present invention, since the concentration of impurities or defects at the waveguide layer and the interface between the waveguide layer and the cladding layer is low, light absorption related to the deep level formed by the impurities or defects is reduced. This results in an optical waveguide with low loss.
ＺｎＳ及びＺｎ５ｅ等のＩＩ −ＶＴ族化合物半導体は
、基板のＧａＡｓと同じ閃亜鉛鉱型の結晶構造である為
ＧａＡｓ基板上に容易にエピタキシャル成長できる。又
、発光素子及び受光素子等の光デバイスや電子デバイス
もＧａＡｓ基板上に作製することができる為、本発明の
光導波路はこれらのデバイスを集積化した光集積回路或
いは光電子集積回路等に容易に応用することができる。II-VT group compound semiconductors such as ZnS and Zn5e can be easily grown epitaxially on a GaAs substrate because they have the same zincblende crystal structure as the GaAs substrate. Furthermore, since optical devices and electronic devices such as light emitting elements and light receiving elements can be fabricated on GaAs substrates, the optical waveguide of the present invention can be easily integrated into optical integrated circuits or optoelectronic integrated circuits that integrate these devices. It can be applied.
又基板としてＧａＡｓ以外にもＩｎＰ等のＩＩＩ −Ｖ
族生導体基板も用いることができる。又導波路層及びク
ラッド層の材料として表１に示した様なＩＩ−ＶＩ族化
合物半導体を用いることもてきる。又本発明の光導波路
においてはＺｎ５ｅの導波路層は５１０２膜に完全に覆
われて保護されている為、外界の影響を受けることなく
長期間安定な動作が得られ信頼性が高い。導波路層の保
護膜としてＳｉＯ３以外にもＳｉ ３Ｎ４又はＡＩ□０
３等の他の誘電体薄膜を用いることができる。In addition to GaAs, III-V such as InP can also be used as a substrate.
Polymer conductive substrates can also be used. Further, II-VI group compound semiconductors as shown in Table 1 can be used as materials for the waveguide layer and cladding layer. Furthermore, in the optical waveguide of the present invention, since the Zn5e waveguide layer is completely covered and protected by the 5102 film, stable operation can be obtained for a long period of time without being affected by the external environment, and the reliability is high. In addition to SiO3, Si 3N4 or AI□0 can be used as a protective film for the waveguide layer.
Other dielectric thin films such as No. 3 can be used.
以下に本発明の光導波路の製造方法を第４図（ａ）〜（
ｄ）を用いて説明する。初めに、ＧａＡｓ基板上に熱Ｃ
ＶＤ法等によりマスク５の８１０２を堆積する。この状
態が第４図（ａ）である。次にフォトリングラフィ技術
によりＳｉＯ３のバターニングを行う。この場合導波路
層を形成する部分のＳ ｉ Ｏ２をエツチングにより除
去する。この状態が第４図（ｂ）である。パターニング
された５１０２をマスクとして選択エピタキシャル成長
によりクラッド層のＺｎＳ及び導波路層のＺｎ５ｅを同
一の成長炉内で連続して形成する。この時マスクのＳｉ
Ｏ３上には堆積物がなく第４図（Ｃ）の様な状態となる
。ＺｎＳ及びＺｎ５ｅの選択エピタキシャル成長は以下
の様な方法で行うことができる。原料としてＺｎ及びＳ
及びＳｅの有機化合物を用い、成長圧力が１００ Ｔｏ
ｒｒ以下、成長温度が４００℃以上７００℃以下、ＶＩ
族原料とＩＩ族原料の供給モル比がθ以下の条件の下で
減圧ＭＯＣＶＤ法或いはＭＯＭＢＥ法により行う。クラ
ッド層のＺｎＳ及び導波路層のＺｎ５ｅを形成した後、
沸酸系のエッチャントにより５１０２を除去し導波路層
であるＺｎ５ｅの全面を覆う様にＳｉＯ□膜を形成し第
４図（ｄ）の様に光導波路が完成する。上記の例ではマ
スクとしてＳｉＯ３を用いた例について示したが、８１
３Ｎ４等の他の誘電体薄膜或いはＷ等も同様に用いるこ
とができる。又、ＣｄＳ、ＺｎＴｅ、ＣｄＳｅ等の選択
エピタキシャル成長する場合、Ｃｄ、Ｓ、Ｚｎ、Ｔｅ、
Ｓｅのそれぞれの有機化合物を原料として用いる。又導
波路層を保護膜と６のマスフの材質が同一の場合、マス
クを除去する工程を省くことも可能である。The method for manufacturing an optical waveguide of the present invention will be described below in FIGS.
This will be explained using d). First, heat C is applied on the GaAs substrate.
Mask 5 8102 is deposited by VD method or the like. This state is shown in FIG. 4(a). Next, patterning of SiO3 is performed using photolithography technology. In this case, the S i O2 in the portion where the waveguide layer will be formed is removed by etching. This state is shown in FIG. 4(b). Using patterned 5102 as a mask, ZnS for the cladding layer and Zn5e for the waveguide layer are successively formed in the same growth furnace by selective epitaxial growth. At this time, the Si of the mask
There is no deposit on O3, resulting in a state as shown in FIG. 4(C). Selective epitaxial growth of ZnS and Zn5e can be performed by the following method. Zn and S as raw materials
Using an organic compound of Se and Se, the growth pressure was 100 To
rr or less, growth temperature is 400°C or more and 700°C or less, VI
This is carried out by a reduced pressure MOCVD method or a MOMBE method under the condition that the molar ratio of the Group raw material to the Group II raw material is θ or less. After forming the ZnS cladding layer and the Zn5e waveguide layer,
5102 is removed using a hydrofluoric acid etchant and a SiO□ film is formed to cover the entire surface of the Zn5e waveguide layer, completing the optical waveguide as shown in FIG. 4(d). In the above example, an example using SiO3 as a mask was shown, but 81
Other dielectric thin films such as 3N4 or W can also be used in the same manner. In addition, in the case of selective epitaxial growth of CdS, ZnTe, CdSe, etc., Cd, S, Zn, Te,
Each organic compound of Se is used as a raw material. Further, when the waveguide layer, the protective film and the mask 6 are made of the same material, it is possible to omit the step of removing the mask.
［発明の効果］
以上述べた様に本発明のＩＩ −ＶＩ族化合物半導体の
光導波路は下記の効果を有する。[Effects of the Invention] As described above, the optical waveguide of the II-VI group compound semiconductor of the present invention has the following effects.
１）本発明の光導波路の構造において光の閉し込めを有
効に行うことができる。1) In the structure of the optical waveguide of the present invention, light can be effectively confined.
１ｉ）ｉ）により光学的な非線形効果を有効に使うこと
が可能になる。1i) i) makes it possible to effectively use optical nonlinear effects.
１１１）可視の光に対して低損失である。111) Low loss for visible light.
ｉｖ）発光素子及び受光素子を構成するＩｌｌ −Ｖ族
化合物半導体と同し結晶構造を有する為、これ等の光デ
バイスと同一基板上に本発明の光導波路を容易に作製す
ることが可能である。これは、本発明の光導波路が光集
積回路或いは光電子集積回路等の構成要素として適して
いることを意味する。iv) Since it has the same crystal structure as the Ill-V group compound semiconductor that constitutes the light emitting element and the light receiving element, it is possible to easily fabricate the optical waveguide of the present invention on the same substrate as these optical devices. . This means that the optical waveguide of the present invention is suitable as a component of an optical integrated circuit or an optoelectronic integrated circuit.
■）導波路層が外界から保護されている為、経時変化が
小さく信頼性が高い。■) Since the waveguide layer is protected from the outside world, there is little change over time and high reliability.
又、本発明の先導波路の製造方法は以下の様な効果を有
する。Further, the method for manufacturing a leading waveguide of the present invention has the following effects.
ｖｉ）上記の構造の光導波路をセルファラインプロセス
で容易に作製することができる。vi) The optical waveguide having the above structure can be easily manufactured by a self-line process.
ｖｉｉｌ導波路層のエツチング工程が不要である為エツ
チングによって必然的に起る表面の荒れを防ぐことがで
き散乱損失の小さい先導波路を作製することができる。Since the etching step of the viil waveguide layer is not necessary, it is possible to prevent surface roughness that inevitably occurs due to etching, and to produce a guide waveguide with low scattering loss.
第１図は本発明の実施例におけるＩＩ −ＶＩ族化合物
半導体の光導波路の概略断面図。
第２図は本発明の実施例におけるＩＩ −ＶＩ族化合物
半導体の先導波路の製造工程を示す概略断面図。
第３図（ａ）〜（ｄ）は、本発明の実施例における第１
図の構造の光導波路の製造工程を示す概略断面図。
第４図（ａ）〜（ｄ）は本発明の実施例における第２図
の構造の光導波路の製造工程を示す概略断面図。
第５図は従来技術のＩＩ −ＶＩ族化合物半導体装置導
波路の概略図。
・ＧａＡｓ基板
・ＺｎＳクラッド層
・Ｚｎ５ｅ導波路層
・ＳｉＯ□膜
・Ｓ ｉ ０２マスク
・ＧａＡｓ基板
・ＺｎＳクラッド層
・Ｚｎ５ｅ−ＺｎＳ超格子導波路層
・Ｓ ｉ ０２
以上
出願人 セイコーエプソン株式会社
代理人 弁理士 上 柳 雅 誉（他１名）（ｄ）
（ト）
（ｔ）FIG. 1 is a schematic cross-sectional view of an optical waveguide made of a II-VI group compound semiconductor in an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view showing the manufacturing process of a leading waveguide of a II-VI group compound semiconductor in an example of the present invention. FIGS. 3(a) to 3(d) show the first embodiment of the present invention.
FIG. 3 is a schematic cross-sectional view showing the manufacturing process of the optical waveguide having the structure shown in the figure. 4(a) to 4(d) are schematic sectional views showing the manufacturing process of the optical waveguide having the structure shown in FIG. 2 in an embodiment of the present invention. FIG. 5 is a schematic diagram of a conventional II-VI group compound semiconductor device waveguide.・GaAs substrate ・ZnS cladding layer ・Zn5e waveguide layer ・SiO□ film ・S i 02 mask ・GaAs substrate ・ZnS cladding layer ・Zn5e-ZnS superlattice waveguide layer ・S i 02 Applicant Seiko Epson Corporation Agent Patent attorney Masa Homare Kamiyagi (1 other person) (d) (g) (t)
Claims (3)
層と該クラッド層よりも大きな屈折率を有するII−VI族
化合物半導体より成る導波路を層積層した構造を有し、
かつ少なくとも導波路層がリッジ型であり、かつ導波路
層は誘電体薄膜により完全に覆われていることを特徴と
する光導波路。(1) It has a structure in which a cladding layer made of a II-VI compound semiconductor and a waveguide made of a II-VI compound semiconductor having a larger refractive index than the cladding layer are laminated on a substrate,
An optical waveguide characterized in that at least the waveguide layer is ridge-shaped, and the waveguide layer is completely covered with a dielectric thin film.
ド層上にマスクを形成する工程と、該マスクを用いて導
波路層をクラッド層上の一部に選択的に形成する工程と
、マスクを除去する工程と、該導波路層の全面に誘電体
薄膜を形成する工程を含むことを特徴とする光導波路の
製造方法。(2) forming a cladding layer on the substrate; forming a mask on the cladding layer; and selectively forming a waveguide layer on a portion of the cladding layer using the mask; A method for manufacturing an optical waveguide, comprising the steps of removing a mask and forming a dielectric thin film over the entire surface of the waveguide layer.
いてクラッド層と導波路層を基板上の一部に選択的に形
成する工程と、マスクを除去する工程と、該導波層の全
面に誘電体薄膜を形成する工程を含むことを特徴とする
第２項記載の光導波路の製造方法。(3) forming a mask on the substrate; using the mask to selectively form a cladding layer and a waveguide layer on a portion of the substrate; removing the mask; and the waveguide layer 3. The method for manufacturing an optical waveguide according to claim 2, comprising the step of forming a dielectric thin film on the entire surface of the optical waveguide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19650088A JPH0246406A (en) | 1988-08-06 | 1988-08-06 | Optical waveguide and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19650088A JPH0246406A (en) | 1988-08-06 | 1988-08-06 | Optical waveguide and its production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0246406A true JPH0246406A (en) | 1990-02-15 |
Family
ID=16358789
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19650088A Pending JPH0246406A (en) | 1988-08-06 | 1988-08-06 | Optical waveguide and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0246406A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1991017575A2 (en) * | 1990-05-01 | 1991-11-14 | British Telecommunications Public Limited Company | Optoelectronic device |
| WO2011127840A1 (en) * | 2010-04-15 | 2011-10-20 | Shanghai Silight Technology Co., Ltd | Method for fabricating waveguides using epitaxial growth |
-
1988
- 1988-08-06 JP JP19650088A patent/JPH0246406A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1991017575A2 (en) * | 1990-05-01 | 1991-11-14 | British Telecommunications Public Limited Company | Optoelectronic device |
| US5446751A (en) * | 1990-05-01 | 1995-08-29 | British Telecommunications Public Limited Company | Optoelectronic device |
| WO2011127840A1 (en) * | 2010-04-15 | 2011-10-20 | Shanghai Silight Technology Co., Ltd | Method for fabricating waveguides using epitaxial growth |
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