JPS5940592A - 半導体レ−ザ素子 - Google Patents

半導体レ−ザ素子

Info

Publication number
JPS5940592A
JPS5940592A JP57151537A JP15153782A JPS5940592A JP S5940592 A JPS5940592 A JP S5940592A JP 57151537 A JP57151537 A JP 57151537A JP 15153782 A JP15153782 A JP 15153782A JP S5940592 A JPS5940592 A JP S5940592A
Authority
JP
Japan
Prior art keywords
layer
active layer
laser
semiconductor laser
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57151537A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6343908B2 (enExample
Inventor
Toshiro Hayakawa
利郎 早川
Nobuyuki Miyauchi
宮内　伸幸
Naohiro Suyama
尚宏 須山
Morichika Yano
矢野　盛規
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP57151537A priority Critical patent/JPS5940592A/ja
Priority to US06/486,646 priority patent/US4545057A/en
Priority to DE8383302278T priority patent/DE3377183D1/de
Priority to EP83302278A priority patent/EP0104712B1/en
Publication of JPS5940592A publication Critical patent/JPS5940592A/ja
Publication of JPS6343908B2 publication Critical patent/JPS6343908B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP57151537A 1982-08-30 1982-08-30 半導体レ−ザ素子 Granted JPS5940592A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57151537A JPS5940592A (ja) 1982-08-30 1982-08-30 半導体レ−ザ素子
US06/486,646 US4545057A (en) 1982-08-30 1983-04-20 Window structure of a semiconductor laser
DE8383302278T DE3377183D1 (en) 1982-08-30 1983-04-21 Semiconductor laser
EP83302278A EP0104712B1 (en) 1982-08-30 1983-04-21 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57151537A JPS5940592A (ja) 1982-08-30 1982-08-30 半導体レ−ザ素子

Publications (2)

Publication Number Publication Date
JPS5940592A true JPS5940592A (ja) 1984-03-06
JPS6343908B2 JPS6343908B2 (enExample) 1988-09-01

Family

ID=15520675

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57151537A Granted JPS5940592A (ja) 1982-08-30 1982-08-30 半導体レ−ザ素子

Country Status (4)

Country Link
US (1) US4545057A (enExample)
EP (1) EP0104712B1 (enExample)
JP (1) JPS5940592A (enExample)
DE (1) DE3377183D1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0162569A3 (en) * 1984-04-17 1987-06-10 Sharp Kabushiki Kaisha A semiconductor laser
EP0160490B1 (en) * 1984-04-24 1992-07-08 Sharp Kabushiki Kaisha A semiconductor laser
JPS6195593A (ja) * 1984-10-16 1986-05-14 Sharp Corp 半導体レ−ザ素子
JPS61289689A (ja) * 1985-06-18 1986-12-19 Mitsubishi Electric Corp 半導体発光装置
JPS6218783A (ja) * 1985-07-17 1987-01-27 Sharp Corp 半導体レ−ザ素子
JPS62202584A (ja) * 1986-02-28 1987-09-07 Mitsubishi Electric Corp 半導体レ−ザ装置の製造方法
US4839307A (en) * 1986-05-14 1989-06-13 Omron Tateisi Electronics Co. Method of manufacturing a stripe-shaped heterojunction laser with unique current confinement
JPH0797689B2 (ja) * 1987-05-18 1995-10-18 株式会社東芝 半導体レ−ザ素子
JPH0671121B2 (ja) * 1987-09-04 1994-09-07 シャープ株式会社 半導体レーザ装置
US4942585A (en) * 1987-12-22 1990-07-17 Ortel Corporation High power semiconductor laser
US5555544A (en) * 1992-01-31 1996-09-10 Massachusetts Institute Of Technology Tapered semiconductor laser oscillator
EP0627799B1 (en) * 1993-06-04 1997-10-08 Sharp Kabushiki Kaisha Semiconductor light-emitting device with third cladding layer
US5546418A (en) * 1993-07-28 1996-08-13 Matsushita Electric Industrial Co., Ltd. Semiconductor laser having a flat groove for selected crystal planes
JP4481688B2 (ja) * 2003-04-10 2010-06-16 Ｈｏｙａ株式会社 基板処理装置，塗布装置、塗布方法、及び、フォトマスクの製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3978426A (en) * 1975-03-11 1976-08-31 Bell Telephone Laboratories, Incorporated Heterostructure devices including tapered optical couplers
JPS54115088A (en) * 1978-02-28 1979-09-07 Nec Corp Double hetero junction laser element of stripe type
JPS54138386A (en) * 1978-04-20 1979-10-26 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device of current narrow type
JPS5636184A (en) * 1979-08-31 1981-04-09 Nec Corp Manufacture of semiconductor laser
DE3376936D1 (en) * 1982-05-28 1988-07-07 Sharp Kk Semiconductor laser

Also Published As

Publication number Publication date
EP0104712A2 (en) 1984-04-04
DE3377183D1 (en) 1988-07-28
EP0104712A3 (en) 1985-05-29
JPS6343908B2 (enExample) 1988-09-01
US4545057A (en) 1985-10-01
EP0104712B1 (en) 1988-06-22

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