JPS5937751U - semiconductor equipment - Google Patents

semiconductor equipment

Info

Publication number
JPS5937751U
JPS5937751U JP13413682U JP13413682U JPS5937751U JP S5937751 U JPS5937751 U JP S5937751U JP 13413682 U JP13413682 U JP 13413682U JP 13413682 U JP13413682 U JP 13413682U JP S5937751 U JPS5937751 U JP S5937751U
Authority
JP
Japan
Prior art keywords
semiconductor
temperature sensor
utility
semiconductor equipment
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13413682U
Other languages
Japanese (ja)
Inventor
信二 瀬戸
Original Assignee
三菱電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to JP13413682U priority Critical patent/JPS5937751U/en
Publication of JPS5937751U publication Critical patent/JPS5937751U/en
Pending legal-status Critical Current

Links

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の温度測定方法を示す半導体(この場合は
集積回路)の断面図、第2図はこの考案の一実施例によ
る温度測定用センサを半導体チップの中に形成された場
合の半導体装置の一部断面図である。 図吊、6はチップ、7はトランジスタ、8はダイオード
である。
Fig. 1 is a cross-sectional view of a semiconductor (in this case, an integrated circuit) showing a conventional temperature measurement method, and Fig. 2 is a cross-sectional view of a semiconductor in which a temperature measurement sensor according to an embodiment of this invention is formed in a semiconductor chip. FIG. 2 is a partial cross-sectional view of the device. In the figure, 6 is a chip, 7 is a transistor, and 8 is a diode.

Claims (2)

【実用新案登録請求の範囲】[Scope of utility model registration request] (1)集積回路、トランジスタ、ダイオード、サイリス
タなどを構成する半導体装置において、そのチップの中
に、それらの機能遂行のための回路素子とは別個に半導
体素子からなる温度センサを形成配設したことを特徴と
する半導体装置。
(1) In semiconductor devices constituting integrated circuits, transistors, diodes, thyristors, etc., a temperature sensor made of a semiconductor element is formed and disposed within the chip, separate from the circuit elements for performing those functions. A semiconductor device characterized by:
(2)温度センサは接合ダイオードあるいは抵抗素子で
LZ 品たことを特徴とする実用新案登録請求    
1項記載の半導体装置。
(2) Request for registration of a utility model characterized in that the temperature sensor is a junction diode or resistance element and is an LZ product.
The semiconductor device according to item 1.
JP13413682U 1982-09-01 1982-09-01 semiconductor equipment Pending JPS5937751U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13413682U JPS5937751U (en) 1982-09-01 1982-09-01 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13413682U JPS5937751U (en) 1982-09-01 1982-09-01 semiconductor equipment

Publications (1)

Publication Number Publication Date
JPS5937751U true JPS5937751U (en) 1984-03-09

Family

ID=30302334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13413682U Pending JPS5937751U (en) 1982-09-01 1982-09-01 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS5937751U (en)

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