JPS5937751U - semiconductor equipment - Google Patents
semiconductor equipmentInfo
- Publication number
- JPS5937751U JPS5937751U JP13413682U JP13413682U JPS5937751U JP S5937751 U JPS5937751 U JP S5937751U JP 13413682 U JP13413682 U JP 13413682U JP 13413682 U JP13413682 U JP 13413682U JP S5937751 U JPS5937751 U JP S5937751U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- temperature sensor
- utility
- semiconductor equipment
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来の温度測定方法を示す半導体（この場合は
集積回路）の断面図、第２図はこの考案の一実施例によ
る温度測定用センサを半導体チップの中に形成された場
合の半導体装置の一部断面図である。
図吊、６はチップ、７はトランジスタ、８はダイオード
である。Fig. 1 is a cross-sectional view of a semiconductor (in this case, an integrated circuit) showing a conventional temperature measurement method, and Fig. 2 is a cross-sectional view of a semiconductor in which a temperature measurement sensor according to an embodiment of this invention is formed in a semiconductor chip. FIG. 2 is a partial cross-sectional view of the device. In the figure, 6 is a chip, 7 is a transistor, and 8 is a diode.
Claims (2)
タなどを構成する半導体装置において、そのチップの中
に、それらの機能遂行のための回路素子とは別個に半導
体素子からなる温度センサを形成配設したことを特徴と
する半導体装置。(1) In semiconductor devices constituting integrated circuits, transistors, diodes, thyristors, etc., a temperature sensor made of a semiconductor element is formed and disposed within the chip, separate from the circuit elements for performing those functions. A semiconductor device characterized by:
ＬＺ 品たことを特徴とする実用新案登録請求
１項記載の半導体装置。(2) Request for registration of a utility model characterized in that the temperature sensor is a junction diode or resistance element and is an LZ product.
The semiconductor device according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13413682U JPS5937751U (en) | 1982-09-01 | 1982-09-01 | semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13413682U JPS5937751U (en) | 1982-09-01 | 1982-09-01 | semiconductor equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5937751U true JPS5937751U (en) | 1984-03-09 |
Family
ID=30302334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13413682U Pending JPS5937751U (en) | 1982-09-01 | 1982-09-01 | semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5937751U (en) |
-
1982
- 1982-09-01 JP JP13413682U patent/JPS5937751U/en active Pending
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