JPS593546B2 - スパツタ装置 - Google Patents
スパツタ装置Info
- Publication number
- JPS593546B2 JPS593546B2 JP4614480A JP4614480A JPS593546B2 JP S593546 B2 JPS593546 B2 JP S593546B2 JP 4614480 A JP4614480 A JP 4614480A JP 4614480 A JP4614480 A JP 4614480A JP S593546 B2 JPS593546 B2 JP S593546B2
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- sputtering apparatus
- magnet means
- target
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004544 sputter deposition Methods 0.000 title claims description 97
- 230000005291 magnetic effect Effects 0.000 claims description 118
- 230000004907 flux Effects 0.000 claims description 24
- 230000005684 electric field Effects 0.000 claims description 11
- 238000001816 cooling Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 229910000859 α-Fe Inorganic materials 0.000 claims description 9
- 230000003100 immobilizing effect Effects 0.000 claims 1
- 238000005728 strengthening Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 11
- 229910000831 Steel Inorganic materials 0.000 description 6
- 241000218645 Cedrus Species 0.000 description 5
- 239000010959 steel Substances 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000003014 reinforcing effect Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005065 mining Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 241000208140 Acer Species 0.000 description 1
- 241000272814 Anser sp. Species 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910000828 alnico Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- ZFXYFBGIUFBOJW-UHFFFAOYSA-N theophylline Chemical compound O=C1N(C)C(=O)N(C)C2=C1NC=N2 ZFXYFBGIUFBOJW-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3452—Magnet distribution
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Coating By Spraying Or Casting (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2843479A | 1979-04-09 | 1979-04-09 | |
| US28434 | 1998-02-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55148770A JPS55148770A (en) | 1980-11-19 |
| JPS593546B2 true JPS593546B2 (ja) | 1984-01-24 |
Family
ID=21843423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4614480A Expired JPS593546B2 (ja) | 1979-04-09 | 1980-04-08 | スパツタ装置 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS593546B2 (OSRAM) |
| CA (1) | CA1153733A (OSRAM) |
| DE (1) | DE3012935C2 (OSRAM) |
| FR (1) | FR2454178A1 (OSRAM) |
| GB (1) | GB2051877B (OSRAM) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4457825A (en) * | 1980-05-16 | 1984-07-03 | Varian Associates, Inc. | Sputter target for use in a sputter coating source |
| CH649578A5 (de) * | 1981-03-27 | 1985-05-31 | Ulvac Corp | Hochgeschwindigkeits-kathoden-zerstaeubungsvorrichtung. |
| GB2096177B (en) * | 1981-04-07 | 1985-07-17 | Fournier Paul R | Improved integrated sputtering apparatus and method |
| GB2110719B (en) * | 1981-11-30 | 1985-10-30 | Anelva Corp | Sputtering apparatus |
| JPS58130277A (ja) * | 1982-01-27 | 1983-08-03 | Clarion Co Ltd | マグネトロンスパツタ装置 |
| US4391697A (en) * | 1982-08-16 | 1983-07-05 | Vac-Tec Systems, Inc. | High rate magnetron sputtering of high permeability materials |
| JPS5989769A (ja) * | 1982-11-15 | 1984-05-24 | Hitachi Ltd | プレ−ナマグネトロン型スパツタ電極 |
| US4581118A (en) * | 1983-01-26 | 1986-04-08 | Materials Research Corporation | Shaped field magnetron electrode |
| US4515675A (en) * | 1983-07-06 | 1985-05-07 | Leybold-Heraeus Gmbh | Magnetron cathode for cathodic evaportion apparatus |
| DE3429988A1 (de) * | 1983-12-05 | 1985-06-13 | Leybold-Heraeus GmbH, 5000 Köln | Magnetronkatode zum zerstaeuben ferromagnetischer targets |
| CH659484A5 (de) * | 1984-04-19 | 1987-01-30 | Balzers Hochvakuum | Anordnung zur beschichtung von substraten mittels kathodenzerstaeubung. |
| JPH0633454B2 (ja) * | 1984-11-20 | 1994-05-02 | 松下電器産業株式会社 | スパツタリング装置 |
| US4657619A (en) * | 1985-11-29 | 1987-04-14 | Donnell Kevin P O | Diverter magnet arrangement for plasma processing system |
| JPS62153365U (OSRAM) * | 1987-02-12 | 1987-09-29 | ||
| GB2209769A (en) * | 1987-09-16 | 1989-05-24 | Ion Tech Ltd | Sputter coating |
| JPH0219462A (ja) * | 1988-07-06 | 1990-01-23 | Ube Ind Ltd | マグネトロンスパッタリング方法及びその装置 |
| KR20170104160A (ko) * | 2011-04-26 | 2017-09-14 | 가부시키가이샤 아루박 | 캐소드 유닛 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3878085A (en) * | 1973-07-05 | 1975-04-15 | Sloan Technology Corp | Cathode sputtering apparatus |
| US3956093A (en) * | 1974-12-16 | 1976-05-11 | Airco, Inc. | Planar magnetron sputtering method and apparatus |
| CH611938A5 (OSRAM) * | 1976-05-19 | 1979-06-29 | Battelle Memorial Institute | |
| NL7607473A (nl) * | 1976-07-07 | 1978-01-10 | Philips Nv | Verstuifinrichting en werkwijze voor het ver- stuiven met een dergelijke inrichting. |
| US4094761A (en) * | 1977-07-25 | 1978-06-13 | Motorola, Inc. | Magnetion sputtering of ferromagnetic material |
-
1980
- 1980-03-27 GB GB8010244A patent/GB2051877B/en not_active Expired
- 1980-04-01 CA CA000349015A patent/CA1153733A/en not_active Expired
- 1980-04-02 DE DE19803012935 patent/DE3012935C2/de not_active Expired
- 1980-04-08 FR FR8007827A patent/FR2454178A1/fr active Granted
- 1980-04-08 JP JP4614480A patent/JPS593546B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2454178A1 (fr) | 1980-11-07 |
| FR2454178B1 (OSRAM) | 1983-11-25 |
| JPS55148770A (en) | 1980-11-19 |
| GB2051877A (en) | 1981-01-21 |
| CA1153733A (en) | 1983-09-13 |
| DE3012935C2 (de) | 1983-04-14 |
| DE3012935A1 (de) | 1980-10-23 |
| GB2051877B (en) | 1983-03-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS593546B2 (ja) | スパツタ装置 | |
| US4265729A (en) | Magnetically enhanced sputtering device | |
| US4865708A (en) | Magnetron sputtering cathode | |
| US4239611A (en) | Magnetron sputtering devices | |
| JP4264474B2 (ja) | ペニング放電プラズマ源 | |
| US4180450A (en) | Planar magnetron sputtering device | |
| US4892633A (en) | Magnetron sputtering cathode | |
| KR100396456B1 (ko) | 절단된 코니칼 스퍼터링 타겟용 고 타겟 이용 자기 장치 | |
| US5262030A (en) | Magnetron sputtering cathode with electrically variable source size and location for coating multiple substrates | |
| US5902466A (en) | Sputtering apparatus with magnetic orienting device for thin film deposition | |
| KR100228534B1 (ko) | 음극스퍼터링을 이용한 플라즈마 발생장치 | |
| US4461688A (en) | Magnetically enhanced sputtering device having a plurality of magnetic field sources including improved plasma trapping device and method | |
| JP3473954B2 (ja) | プレーナ型マグネトロン・スパッタ用磁石構造体の改良 | |
| US5308417A (en) | Uniformity for magnetically enhanced plasma chambers | |
| JPS5855228B2 (ja) | マグネトロンスパツタ装置 | |
| KR20030022334A (ko) | 링형 고밀도 플라스마 생성 소스 및 방법 | |
| US6432285B1 (en) | Planar magnetron sputtering apparatus | |
| JPH11500490A (ja) | 磁性ターゲット材料のスパッタ方法及び装置 | |
| CA1141704A (en) | Magnetically enhanced sputtering device | |
| US5085755A (en) | Sputtering apparatus for forming thin films | |
| NL9301480A (nl) | Inrichting voor het opwekken van een plasma door middel van kathodeverstuiving en microgolfbestraling. | |
| JPH02194171A (ja) | マグネトロンスパッタリング源 | |
| JPH0525625A (ja) | マグネトロンスパツタカソード | |
| JPH0693442A (ja) | マグネトロン・スパッタカソード | |
| US7182843B2 (en) | Rotating sputtering magnetron |