JPS5935089A - ３−５族化合物半導体単結晶の直径制御方法 - Google Patents
３−５族化合物半導体単結晶の直径制御方法Info
- Publication number
- JPS5935089A JPS5935089A JP14332382A JP14332382A JPS5935089A JP S5935089 A JPS5935089 A JP S5935089A JP 14332382 A JP14332382 A JP 14332382A JP 14332382 A JP14332382 A JP 14332382A JP S5935089 A JPS5935089 A JP S5935089A
- Authority
- JP
- Japan
- Prior art keywords
- diameter
- single crystal
- crystal
- signal
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 25
- 150000001875 compounds Chemical class 0.000 title claims abstract description 8
- 239000004065 semiconductor Substances 0.000 title claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 230000002441 reversible effect Effects 0.000 claims description 8
- 244000062793 Sorghum vulgare Species 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 235000019713 millet Nutrition 0.000 claims description 2
- 239000000725 suspension Substances 0.000 claims description 2
- 238000002109 crystal growth method Methods 0.000 claims 1
- 239000007788 liquid Substances 0.000 abstract description 3
- 239000000155 melt Substances 0.000 description 9
- 238000004033 diameter control Methods 0.000 description 6
- 230000000295 complement effect Effects 0.000 description 3
- 241000257465 Echinoidea Species 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OPFJDXRVMFKJJO-ZHHKINOHSA-N N-{[3-(2-benzamido-4-methyl-1,3-thiazol-5-yl)-pyrazol-5-yl]carbonyl}-G-dR-G-dD-dD-dD-NH2 Chemical compound S1C(C=2NN=C(C=2)C(=O)NCC(=O)N[C@H](CCCN=C(N)N)C(=O)NCC(=O)N[C@H](CC(O)=O)C(=O)N[C@H](CC(O)=O)C(=O)N[C@H](CC(O)=O)C(N)=O)=C(C)N=C1NC(=O)C1=CC=CC=C1 OPFJDXRVMFKJJO-ZHHKINOHSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000034303 cell budding Effects 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 229940126086 compound 21 Drugs 0.000 description 1
- -1 compound compound Chemical class 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/28—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using weight changes of the crystal or the melt, e.g. flotation methods
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14332382A JPS5935089A (ja) | 1982-08-20 | 1982-08-20 | ３−５族化合物半導体単結晶の直径制御方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14332382A JPS5935089A (ja) | 1982-08-20 | 1982-08-20 | ３−５族化合物半導体単結晶の直径制御方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5935089A true JPS5935089A (ja) | 1984-02-25 |
| JPH0379319B2 JPH0379319B2 (enrdf_load_stackoverflow) | 1991-12-18 |
Family
ID=15336110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14332382A Granted JPS5935089A (ja) | 1982-08-20 | 1982-08-20 | ３−５族化合物半導体単結晶の直径制御方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5935089A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59184796A (ja) * | 1983-04-04 | 1984-10-20 | Agency Of Ind Science & Technol | ３−５族化合物半導体単結晶の製造方法 |
| JPS62159356A (ja) * | 1986-01-08 | 1987-07-15 | Victor Co Of Japan Ltd | 光学的情報信号再生装置 |
-
1982
- 1982-08-20 JP JP14332382A patent/JPS5935089A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59184796A (ja) * | 1983-04-04 | 1984-10-20 | Agency Of Ind Science & Technol | ３−５族化合物半導体単結晶の製造方法 |
| JPS62159356A (ja) * | 1986-01-08 | 1987-07-15 | Victor Co Of Japan Ltd | 光学的情報信号再生装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0379319B2 (enrdf_load_stackoverflow) | 1991-12-18 |
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